# US 10,504,574 B2 · Magnetic memory device

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- Number: US 10,504,574 B2
- Document ID: US10504574B2
- Status: Granted
- Kind: B2
- Application number: 15/907,714
- Filed: 2018-02-28
- Published: 2018-07-05
- Granted: 2019-12-10
- Earliest claimed: 2016-08-04
- Assignees: Kabushiki Kaisha Toshiba
- Applicants: Kabushiki Kaisha Toshiba
- Inventors: Satoshi Shirotori; Hiroaki Yoda; Yuichi Ohsawa; Hideyuki Sugiyama; Mariko Shimizu; Altansargai Buyandalai; Naoharu Shimomura
- Web page: https://patentgrep.com/patent/US10504574B2

## CPC

- G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell}
- G11C 11/1675: {Writing or programming circuits or methods}
- H10B 61/00: Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10N 50/01: Manufacture or treatment
- H10N 50/10: Magnetoresistive devices
- H10N 50/85: Materials of the active region
- G11C: STATIC STORES (semiconductor memory devices H10B)
- H10B: ELECTRONIC MEMORY DEVICES
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

According to one embodiment, a magnetic memory device includes a metal-containing layer including a metallic element, a first magnetic layer, a second magnetic layer, and a first intermediate layer. The second magnetic layer is provided between the first magnetic layer and a portion of the metal-containing layer. The first intermediate layer includes a portion provided between the first magnetic layer and the second magnetic layer. The first intermediate layer is nonmagnetic. The first intermediate layer is convex toward the metal-containing layer.

## Claims

### Claim 1

A magnetic memory device, comprising:
a metal-containing layer comprising a metallic element, the metal-containing layer comprising a first portion, a second portion, and a third portion provided between the first portion and the second portion;
a first magnetic layer;
a second magnetic layer provided between the first magnetic layer and the third portion, a direction from the second magnetic layer toward the first magnetic layer being along a first direction;
a first intermediate layer comprising a portion provided between the first magnetic layer and the second magnetic layer, the first intermediate layer being nonmagnetic;
a first insulating region, a direction from the first portion toward the first insulating region being along the first direction;
a second insulating region, a direction from the second portion toward the second insulating region being along the first direction, the first intermediate layer being provided between the first insulating region and the second insulating region in a second direction crossing the first direction;
a third insulating region;
a fourth insulating region, the first intermediate layer being provided between the third insulating region and the fourth insulating region in a third direction crossing a plane comprising the first direction and the second direction,
a thickness of the first insulating region in the second direction being different from the third insulating region in the third direction.

### Claim 2 (depends on 1)

The device according to claim 1, wherein a material of the first insulating region is different from a material of the third insulating region.

### Claim 3 (depends on 1)

The device according to claim 1, wherein at least one of the first insulating region or the third insulating region comprises a compound comprising silicon and at least one of oxygen or nitrogen.

### Claim 4 (depends on 3)

The device according to claim 3, wherein the compound comprises at least one of silicon nitride or silicon oxide.

### Claim 5 (depends on 1)

The device according to claim 1, wherein
the first insulating region has a first stress,
the third insulating region has a second stress different from the first stress.

### Claim 6 (depends on 1)

The device according to claim 1, wherein
the first insulating region has a first stress,
the third insulating region has a second stress,
a polarity of the first stress is different from a polarity of the second stress.

### Claim 7 (depends on 1)

The device according to claim 1, wherein
the first insulating region has a compressive stress,
the third insulating region has a tensile stress.

### Claim 8 (depends on 1)

The device according to claim 1, further comprising a controller configured to supply a current flowing between the first portion and the second portion.

### Claim 9 (depends on 1)

A method for manufacturing a magnetic memory device according to claim 1, the method comprising:
heating a member at a temperature not less than 230° C., the member comprising a metal-containing layer, a first magnetic layer, a second magnetic layer provided between the first magnetic layer and the metal-containing layer, and a first intermediate layer provided between the first magnetic layer and the second magnetic layer, the first intermediate layer being nonmagnetic,
the heating causing the metal-containing layer to have a lattice strain not less than 1%.

### Claim 10

A magnetic memory device, comprising:
a metal-containing layer comprising a metallic element, the metal-containing layer comprising a first portion, a second portion, and a third portion provided between the first portion and the second portion;
a first magnetic layer;
a second magnetic layer provided between the first magnetic layer and the third portion, a direction from the second magnetic layer toward the first magnetic layer being along a first direction;
a first intermediate layer comprising a portion provided between the first magnetic layer and the second magnetic layer, the first intermediate layer being nonmagnetic;
a first insulating region, a direction from the first portion toward the first insulating region being along the first direction;
a second insulating region, a direction from the second portion toward the second insulating region being along the first direction, the first intermediate layer being provided between the first insulating region and the second insulating region in a second direction crossing the first direction;
a third insulating region;
a fourth insulating region, the first intermediate layer being provided between the third insulating region and the fourth insulating region in a third direction crossing a plane comprising the first direction and the second direction,
a material of the first insulating region being different from a material of the third insulating region.

### Claim 11 (depends on 10)

The device according to claim 10, wherein at least one of the first insulating region or the third insulating region comprises a compound comprising silicon and at least one of oxygen or nitrogen.

### Claim 12 (depends on 11)

The device according to claim 11, wherein the compound comprises at least one of silicon nitride or silicon oxide.

### Claim 13 (depends on 10)

The device according to claim 10, wherein
the first insulating region has a first stress,
the third insulating region has a second stress different from the first stress.

### Claim 14 (depends on 10)

The device according to claim 10, wherein
the first insulating region has a first stress,
the third insulating region has a second stress,
a polarity of the first stress is different from a polarity of the second stress.

### Claim 15 (depends on 10)

The device according to claim 10, wherein
the first insulating region has a compressive stress,
the third insulating region has a tensile stress.

### Claim 16 (depends on 10)

The device according to claim 10, further comprising a controller configured to supply a current flowing between the first portion and the second portion.