# US 10,503,321 B2 · Optical sensing unit, touch panel, method for manufacturing optical sensing unit, method for manufacturing touch panel, and display device

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- Number: US 10,503,321 B2
- Document ID: US10503321B2
- Status: Granted
- Kind: B2
- Application number: 14/802,703
- Filed: 2015-07-17
- Published: 2016-09-29
- Granted: 2019-12-10
- Earliest claimed: 2015-03-23
- Assignees: Boe Technology Group Co., Ltd.
- Applicants: Boe Technology Group Co., Ltd.
- Inventors: Chunwei Wu; Chungchun Lee; Yanfeng Wang; Xiaoguang Xu
- Web page: https://patentgrep.com/patent/US10503321B2

## CPC

- G06F 3/042: by opto-electronic means
- G06F 3/0412: {Digitisers structurally integrated in a display}
- H10D 30/6723: {having light shields}
- H10D 30/6739: {Conductor-insulator-semiconductor electrodes}
- H10D 30/6756: {Amorphous oxide semiconductors}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/471: {having different architectures, e.g. having both top-gate and bottom-gate TFTs}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- H10D 86/60: wherein the TFTs are in active matrices
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- G06F 2203/04103: Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
- H10F 39/103: {the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors}
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

The present disclosure provides an optical sensing unit, a touch panel, a method for manufacturing the optical sensing unit, a method for manufacturing the touch panel, and a display device. The optical sensing unit includes a Photo thin film transistor (TFT), a storage capacitor for storing a leakage current generated by the Photo TFT, and a Readout TFT for reading out an electric signal stored in the storage capacitor. The method for manufacturing the optical sensing unit includes a step of forming a gate electrode of the Readout TFT capable of shielding an active layer of the Readout TFT and preventing the active layer from being exposed to an ambient light beam.

## Claims

### Claim 1

A method for manufacturing an optical sensing unit for an organic light-emitting diode (OLED) touch panel, the optical sensing unit comprising a Photo thin film transistor (TFT), a storage capacitor for storing a leakage current generated by the Photo TFT, and a Readout TFT for reading out an electric signal stored in the storage capacitor, the method comprising steps of:
providing a substrate;
forming a gate electrode of the Readout TFT capable of shielding an active layer of the Readout TFT and preventing the active layer from being exposed to an ambient light beam;
forming a source electrode and a drain electrode of the Photo TFT in an insulating layer; and
forming an entirety of a gate electrode of the Photo TFT in a gate insulating layer;
wherein the gate insulating layer is between the insulating layer and the substrate;
wherein an active layer of the Photo TFT includes an upper major surface and a lower major surface, and a pair of side surfaces that connect the upper major surface to the lower major surface;
a first part of the source electrode of the Photo TFT and a first part of the drain electrode of the Photo TFT overlap and directly contact the upper major surface of the active layer of the Photo TFT; and
a second part of the source electrode of the Photo TFT and a second part of the drain electrode of the Photo TFT are located on the gate insulating layer.

### Claim 2 (depends on 1)

The method according to claim 1, further comprising:
forming the active layer of the Photo TFT and the active layer of the Readout TFT by a single patterning process; and/or
forming a source electrode and a drain electrode of the Readout TFT.

### Claim 3 (depends on 1)

A method for manufacturing the OLED touch panel, comprising the method for manufacturing the optical sensing unit according to claim 1.

### Claim 4 (depends on 3)

The method according to claim 3, wherein the method further comprising:
forming the active layer of the Photo TFT and the active layer of the Readout TFT by a single patterning process; and/or
forming a source electrode and a drain electrode of the Readout TFT.

### Claim 5 (depends on 3)

The OLED touch panel manufactured by the method according to claim 3.

### Claim 6 (depends on 5)

A display device comprising the OLED touch panel according to claim 5.