# US 10,503,069 B1 · Method of fabricating patterned structure

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- Number: US 10,503,069 B1
- Document ID: US10503069B1
- Status: Granted
- Kind: B1
- Application number: 16/118,446
- Filed: 2018-08-31
- Granted: 2019-12-10
- Earliest claimed: 2018-08-15
- Assignees: United Microelectronics Corp.; Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicants: United Microelectronics Corp.; Fujian Jinhua Integrated Circuit Co., Ltd.
- Inventors: Feng-Yi Chang; Fu-Che Lee
- Web page: https://patentgrep.com/patent/US10503069B1

## CPC

- G03F 7/094: {Multilayer resist systems, e.g. planarising layers}
- H10P 50/71: {using masks for conductive or resistive materials}
- G03F 7/095: having more than one photosensitive layer (G03F7/075 takes precedence)
- G03F 7/2022: {Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure}
- H10B 12/09: {with simultaneous manufacture of the peripheral circuit region and memory cells}
- H10W 20/056: {by filling conductive material into holes, grooves or trenches}
- H10W 20/067: {by modifying the pattern of conductive parts}
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10B: ELECTRONIC MEMORY DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method of fabricating a patterned structure includes the following steps. A first pattern transfer layer and a second pattern transfer layer are formed on a material layer. A part of the second pattern transfer layer is patterned to be a first pattern. A first spacer is formed on sidewalls of the first pattern. The first pattern transfer layer is patterned to be a second pattern and a third pattern. A cover layer is formed covering the first pattern, the first spacer, the second pattern, and the third pattern. A part of the cover layer is removed for exposing the first pattern and the first spacer. The first spacer is removed, and a patterning process is performed to the first pattern transfer layer with the first pattern and the cover layer as a mask. The second pattern is patterned to be a fourth pattern by the patterning process.

## Claims

### Claim 1

A method of fabricating a patterned structure, comprising:
forming a first pattern transfer layer on a material layer;
forming a second pattern transfer layer on the first pattern transfer layer;
performing a first patterning process to the second pattern transfer layer, wherein a part of the second pattern transfer layer is patterned to be a first pattern by the first patterning process;
forming a first spacer on sidewalls of the first pattern;
performing a second patterning process to the first pattern transfer layer after forming the first spacer, wherein the first pattern transfer layer is patterned to be a second pattern and a third pattern by the second patterning process, and the second pattern is formed between the material layer and the first pattern;
forming a cover layer covering the first pattern, the first spacer, the second pattern, and the third pattern;
removing a part of the cover layer for exposing the first pattern and the first spacer;
removing the first spacer; and
performing a third patterning process to the first pattern transfer layer with the first pattern and the cover layer as a mask after removing the first spacer, wherein the second pattern is patterned to be a fourth pattern by the third patterning process.

### Claim 2 (depends on 1)

The method of fabricating the patterned structure according to claim 1, further comprising:
performing a fourth patterning process for transferring the fourth pattern and the third pattern to the material layer.

### Claim 3 (depends on 1)

The method of fabricating the patterned structure according to claim 1, wherein the second patter and the third pattern are separated from one another.

### Claim 4 (depends on 1)

The method of fabricating the patterned structure according to claim 1, wherein the second pattern and the third pattern are connected with one another.

### Claim 5 (depends on 4)

The method of fabricating the patterned structure according to claim 4, wherein the third pattern is patterned to be a fifth pattern by the third patterning process.

### Claim 6 (depends on 5)

The method of fabricating the patterned structure according to claim 5, further comprising:
transferring the fourth pattern and the fifth pattern to the material layer.

### Claim 7 (depends on 1)

The method of fabricating the patterned structure according to claim 1, wherein the material layer is formed on a substrate, a first region and a second region are defined on the substrate, and the first pattern is formed on the first region.

### Claim 8 (depends on 7)

The method of fabricating the patterned structure according to claim 7, wherein the first pattern transfer layer and the second pattern transfer layer are formed on the first region and the second region, and a part of the second pattern transfer layer is patterned to be a sixth pattern formed on the second region by the first patterning process.

### Claim 9 (depends on 8)

The method of fabricating the patterned structure according to claim 8, further comprising:
forming a second spacer on sidewalls of the sixth pattern, wherein the first spacer and the second spacer are formed concurrently.

### Claim 10 (depends on 9)

The method of fabricating the patterned structure according to claim 9, further comprising:
removing the sixth pattern; and
performing a fifth patterning process to the first pattern transfer layer on the second region with the second spacer as a mask after removing the sixth pattern, wherein the first pattern transfer layer on the second region is patterned to be a seventh pattern by the fifth patterning process.

### Claim 11 (depends on 10)

The method of fabricating the patterned structure according to claim 10, wherein the fifth patterning process is performed before the second patterning process.

### Claim 12 (depends on 10)

The method of fabricating the patterned structure according to claim 10, wherein the fifth patterning process is performed after the third patterning process.

### Claim 13 (depends on 10)

The method of fabricating the patterned structure according to claim 10, further comprising:
performing a sixth patterning process to the seventh pattern, wherein the seventh pattern is patterned to be an eighth pattern by the sixth patterning process.

### Claim 14 (depends on 13)

The method of fabricating the patterned structure according to claim 13, wherein the sixth patterning process is performed before the second patterning process.

### Claim 15 (depends on 13)

The method of fabricating the patterned structure according to claim 13, wherein the sixth patterning process is performed after the third patterning process.

### Claim 16 (depends on 13)

The method of fabricating the patterned structure according to claim 13, further comprising:
performing a fourth patterning process for transferring the fourth pattern, the third pattern, and the eighth pattern to the material layer.

### Claim 17 (depends on 16)

The method of fabricating the patterned structure according to claim 16, wherein the material layer on the first region is patterned to be a connection structure on a transistor by the fourth patterning process, and the material layer on the second region is patterned to be a storage node contact pad by the fourth patterning process.

### Claim 18 (depends on 1)

The method of fabricating the patterned structure according to claim 1, wherein the material composition of the first pattern transfer layer is different from the material composition of the second pattern transfer layer.