# US 10,503,068 B2 · Method for forming resist pattern

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- Number: US 10,503,068 B2
- Document ID: US10503068B2
- Status: Granted
- Kind: B2
- Application number: 15/366,244
- Filed: 2016-12-01
- Published: 2017-06-15
- Granted: 2019-12-10
- Earliest claimed: 2015-12-10
- Assignees: Tokyo Ohka Kogyo Co., Ltd.
- Applicants: Tokyo Ohka Kogyo Co., Ltd.
- Inventors: Takayoshi Mori; Ryoji Watanabe; Yoichi Hori
- Web page: https://patentgrep.com/patent/US10503068B2

## CPC

- G03F 7/0397: {the macromolecular compound having an alicyclic moiety in a side chain}
- G03F 7/0035: {Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface}
- G03F 7/162: {Coating on a rotating support, e.g. using a whirler or a spinner}
- G03F 7/168: {Finishing the coated layer, e.g. drying, baking, soaking}
- G03F 7/2006: {using coherent light; using polarised light}
- G03F 7/322: {Aqueous alkaline compositions}
- G03F 7/0045: {with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors}
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)

## Abstract

A method for forming a resist pattern including forming a first contact hole pattern including a hole portion and a hole-unformed portion, which includes alkali developing the exposed positive-type resist film; preparing a structure including the first contact hole pattern and a first layer which covers the first contact hole pattern, which includes forming a first layer by applying a solution including an acid or a thermal acid generator onto a support on which the first contact hole pattern is formed; forming organic solvent-soluble and organic solvent-insoluble regions on the hole-unformed portion, which includes heating the structure; and forming a second contact hole pattern on the hole-unformed portion, which includes developing the heated structure with an organic solvent.

## Claims

### Claim 1

A method for forming a resist pattern comprising:
forming a first contact hole pattern including a hole portion and a hole-unformed portion, which includes forming a positive-type resist film on a support, exposing the positive-type resist film, and alkali developing the exposed positive-type resist film;
preparing a structure including the first contact hole pattern and a first layer which covers the first contact hole pattern, which includes forming a first layer by applying a solution including an acid or a thermal acid generator onto the first contact hole pattern so as to cover the first contact hole pattern and be in contact with a surface in a radial direction of the hole portion of the first contact hole pattern;
forming an organic solvent-soluble region and an organic solvent-insoluble region in the hole-unformed portion of the alkali-developed resist film by heating the structure to cause the action of an acid generated from the thermal acid generator or an acid in the first layer and reduce solubility of the alkali-developed resist film in the periphery of the hole portion of the first contact hole pattern in an organic solvent, wherein the organic solvent-insoluble region is formed in the periphery of the hole portion of the first contact hole pattern by the reduction of solubility of the alkali-developed resist film in an organic solvent, and the organic solvent-soluble region is the remaining hole- unformed portion of the alkali-developed resist film excluding the organic solvent-insoluble region; and
forming a second contact hole pattern in the hole-unformed portion of the alkali-developed resist film, which includes developing the heated structure by an organic solvent to remove the organic solvent-soluble region in the hole-unformed portion of the alkali-developed resist film while maintaining the hole portion of the first contact hole pattern.

### Claim 2 (depends on 1)

The method for forming a resist pattern according to claim 1, wherein the thermal acid generator includes a compound represented by general formula (T1-2) shown below:
wherein Rt104 to Rt105 each independently represent a cyclic group which may have a substituent, a chain-like alkyl group which may have a substituent, or a chain-like alkenyl group which may have a substituent; Rt104 and Rt105 may be bonded to each other to form a ring; Vt102 and Vt103 each independently represent a single bond, an alkylene group, or a fluorinated alkylene group; Lt101 and Lt102 each independently represent a single bond or an oxygen atom; Rt301 to Rt304 each independently represent a hydrogen atom or a linear, branched, or cyclic fluorinated alkyl group having 1 to 12 carbon atoms; and Rt301 to Rt303 may be bonded to each other to form a ring with a nitrogen atom in the formula.

### Claim 3 (depends on 1)

The method for forming a resist pattern according to claim 1, further comprising:
applying a solution including an acid diffusion control agent onto the first layer after preparing the structure including the first contact hole pattern and a first layer which covers the first contact hole pattern; and before forming the organic solvent-soluble region and an organic solvent-insoluble region on the hole-unformed portion.

### Claim 4 (depends on 1)

The method for forming a resist pattern according to claims 1, wherein the structure is heated at a temperatre of 80° C. to 150° C.