# US 10,503,049 B2 · Photonic crystal memory type all-optical “AOR” logic gate

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 10,503,049 B2
- Document ID: US10503049B2
- Status: Granted
- Kind: B2
- Application number: 15/626,293
- Filed: 2017-06-19
- Published: 2017-10-12
- Granted: 2019-12-10
- Earliest claimed: 2014-12-19
- Assignees: Zhengbiao Ouyang
- Applicants: Zhengbiao Ouyang
- Inventors: Zhengbiao Ouyang; Quanqiang Yu
- Web page: https://patentgrep.com/patent/US10503049B2

## CPC

- G02F 1/365: in an optical waveguide structure (G02F1/377, {G02F1/395} take precedence)
- G02B 6/1225: {comprising photonic band-gap structures or photonic lattices}
- G02B 6/125: Bends, branchings or intersections
- G02F 3/00: Optical logic elements; Optical bistable devices
- B82Y 20/00: Nanooptics, e.g. quantum optics or photonic crystals
- G02B 2006/1213: {comprising photonic band-gap structures or photonic lattices}
- G02F 2202/32: Photonic crystals
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

## Abstract

The present invention discloses a photonic crystal memory type all-optical “AOR” logic gate, and including photonic crystal structure; the photonic crystal structure includes two input ports, an output port and an idle port; a first input end and a second input end of the photonic crystal structure are respectively connected with a signal A and a signal B. The present invention has the advantages in high contrast of high and low logic output, high in computing speed, strong in anti-interference capability, and ease of integration with other optical logic elements.

## Claims

### Claim 1

A photonic crystal (PhC) memory type all-optical “AND OR (AOR)” logic gate, comprising:
a PhC structuret; and further comprising:
two input port, an output port and an idle port; a first input end and a second input end of said PhC structure are respectively connected with a signal A and a signal B; the PhC structure is a two-dimensional (2D) PhC cross-waveguide nonlinear cavity, twelve rectangular high-refractive-index linear-dielectric pillars and a square nonlinear-dielectric pillar are arranged in a center of the 2D PhC cross-waveguide nonlinear cavity in a form of a quasi-one-dimensional (quasi-1D) PhC along longitudinal direction in vertical waveguide and transverse direction in horizontal waveguide.

### Claim 2 (depends on 1)

The PhC memory type all-optical “AOR” logic gate of claim 1, wherein the square nonlinear-dielectric pillar clings to adjacent four rectangular high-refractive-index linear-dielectric pillars, and said square nonlinear-dielectric pillar is made of a Kerr type nonlinear material, and has a dielectric constant of 7.9 under low-light-power conditions and the four rectangular high-refractive-index linear-dielectric pillars have a dielectric constant consistent with that of the square nonlinear-dielectric pillar under low-light-power conditions.

### Claim 3 (depends on 1)

The PhC memory type all-optical “AOR” logic gate of claim 1, wherein high-refractive-index linear-dielectric pillars constitute a 2D PhC cross intersected waveguide four-port network, two mutually-orthogonal quasi-1D PhC structures are placed along longitudinal direction in vertical waveguide and transverse direction in horizontal waveguide through a center of a cross-waveguide, the square nonlinear-dielectric pillar is arranged in a middle of said cross-waveguide, and is made of a nonlinear material, and said quasi-1D PhC structure and the square nonlinear-dielectric pillar constitute a waveguide defect cavity.

### Claim 4 (depends on 1)

The PhC memory type all-optical “AOR” logic gate of claim 1, wherein said PhC is a (2k+1)×(2k+1) array structure, where k is an integer more than or equal to 3.

### Claim 5 (depends on 2)

The PhC memory type all-optical “AOR” logic gate of claim 2, wherein a cross section of the high-refractive-index linear-dielectric pillar of said 2D PhC is circular, elliptic, triangular, or polygonal.

### Claim 6 (depends on 1)

The PhC memory type all-optical “AOR” logic gate of claim 1, wherein a background filling material for said 2D PhC includes air and a different-from-air low-refractive-index dielectric having a refractive index less than 1.4.

### Claim 7 (depends on 3)

The PhC memory type all-optical “AOR” logic gate of claim 3, wherein a cross section of rectangular high-refractive-index linear-dielectric pillars of the cross-waveguide is polygonal, circular, or elliptic.

### Claim 8 (depends on 3)

The PhC memory type all-optical “AOR” logic gate of claim 3, wherein a cross section of rectangular high-refractive-index linear-dielectric pillars of the cross-waveguide is rectangular.

### Claim 9 (depends on 3)

The PhC memory type all-optical “AOR” logic gate of claim 3, wherein rectangular high-refractive-index linear-dielectric pillars of the cross-waveguide have a refractive index with a different value more than 2.

### Claim 10 (depends on 3)

The PhC memory type all-optical “AOR” logic gate of claim 3, wherein rectangular high-refractive-index linear-dielectric pillars of the cross-waveguide have a refractive index of 3.4.

### Claim 11 (depends on 3)

The PhC memory type all-optical “AOR” logic gate of claim 3, wherein a cross section of the square nonlinear-dielectric pillar is polygonal, circular, or elliptic.

### Claim 12 (depends on 3)

The PhC memory type all-optical “AOR” logic gate of claim 3, wherein a cross section of the square nonlinear-dielectric pillar is square.