# US 10,503,034 B2 · Manufacturing method of a TFT substrate and structure

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- Number: US 10,503,034 B2
- Document ID: US10503034B2
- Status: Granted
- Kind: B2
- Application number: 15/578,339
- Filed: 2017-11-20
- Published: 2019-07-18
- Granted: 2019-12-10
- Earliest claimed: 2017-09-28
- Assignees: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Applicants: Shenzhen China Star Optoelectronics Semiconductor Display Technology Co., Ltd.
- Inventors: Yanxi Ye
- Web page: https://patentgrep.com/patent/US10503034B2

## CPC

- G02F 1/13439: {characterised by their electrical, optical, physical properties; materials therefor; method of making}
- G02F 1/13394: {spacers regularly patterned on the cell subtrate, e.g. walls, pillars (G02F1/133377 takes precedence)}
- G02F 1/134363: {for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]}
- G02F 1/1362: Active matrix addressed cells {(G02F1/134336, G02F1/134363 take precedence)}
- G02F 1/136209: {Light shielding layers, e.g. black matrix, incorporated in the active matrix substrate, e.g. structurally associated with the switching element}
- G02F 1/136227: {Through-hole connection of the pixel electrode to the active element through an insulation layer}
- G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)}
- H10D 86/021: {of multiple TFTs}
- H10D 86/443: {adapted for preventing breakage, peeling or short circuiting}
- H10D 86/451: {characterised by the compositions or shapes of the interlayer dielectrics}
- H10D 86/60: wherein the TFTs are in active matrices
- G02F 1/13396: {Spacers having different sizes}
- G02F 1/13398: {Spacer materials; Spacer properties}
- G02F 1/136222: {Colour filters incorporated in the active matrix substrate}
- G02F 2201/121: common or background
- G02F 2201/123: pixel
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

The present invention provides a manufacturing method of a TFT substrate and structure. The manufacturing method of the TFT substrate deposit a black photoresist on the second passivation layer (PV2) and patterning to form a main integrated photoresist spacer (61), a sub-photoresist spacer (62) and a black matrix (63), then depositing a transparent conductive film on the integrated main photoresist spacer, the sub-photoresist spacer and the black matrix and patterning to form a pixel electrode (71) and a common electrode (72).

## Claims

### Claim 1

A manufacturing method of a TFT substrate, comprising:
Step S1, providing a base substrate on the TFT arranged in an array, and depositing a first passivation layer covering all the TFTs;
Step S2, depositing a color resist on the first passivation layer and patterning to form a color resist layer, a first color resist block and a second color resist block, wherein the height of the first color resist block is greater than the height of the second color resist block;
Step S3, depositing a second passivation layer on the first passivation layer, the color resist layer, the first color block and the second color block;
Step S4, depositing a black photoresist on the second passivation layer and patterning to form a main integrated photoresist spacer, a sub-photoresist spacer and a black matrix, and a hole through the black matrix, the second passivation layer and the first passivation layer; wherein the main photoresist spacer is located above the first color resist block, the sub-photoresist spacer is located above the second color resist block; and the hole is completely blocked by a drain of the TFT;
Step S5, depositing a transparent conductive film on the integrated main photoresist spacer, the sub-photoresist spacer and the black matrix and patterning to form a pixel electrode and a common electrode, and the pixel electrode is exposed through the hole connected to the drain of the TFT.

### Claim 2 (depends on 1)

The manufacturing method of a TFT substrate according to claim 1, wherein the patterning in step S2 is performed with a slit diffraction type mask.

### Claim 3 (depends on 1)

The manufacturing method of a TFT substrate according to claim 1, wherein the color resist deposited in the step S2 comprises a red color resist, a green color resist and a blue color resist.

### Claim 4 (depends on 1)

The manufacturing method of a TFT substrate according to claim 1, wherein the material of the transparent conductive film is indium tin oxide.

### Claim 5 (depends on 1)

The manufacturing method according to claim 1, wherein the material of the first passivation layer and the second passivation layer is silicon nitride, silicon oxide or its mixture.

### Claim 6 (depends on 1)

The manufacturing method of a TFT substrate according to claim 1, wherein the first color resist block and the second color resist block are island-like structures.

### Claim 7

A TFT substrate structure comprising:
a substrate;
TFTs arranged in an array on the substrate;
a first passivation layer covering all of the TFTs;
a color resist layer, a first color block and a second color block disposed on the first passivation layer, wherein a height of the first color block is greater than the height of the second color block;
a second passivation layer covering the first passivation layer, the color resist layer, the first color resist block and the second color resist block;
an integral main photoresist spacer, a sub-photoresist spacer and a black matrix disposed on the second passivation layer, wherein the main photoresist spacer is correspondingly located above the first color resist block, and the sub-photoresist spacer is correspondingly located above the second color resist block; and
a pixel electrode and a common electrode disposed on the black matrix, wherein the pixel electrode is connected to a drain of the TFT through a hole penetrating the black matrix, the second passivation layer and the first passivation layer; and the hole is completely blocked by the drain of the TFT.

### Claim 8 (depends on 7)

The TFT substrate structure according to claim 7, wherein the color resist layer comprises a red color resist, a green color resist and a blue color resist; and the first color resist block and the second color resist block are islands-like structures.

### Claim 9 (depends on 7)

The TFT substrate structure according to claim 7, wherein the material of the pixel electrode and the common electrode is indium tin oxide.

### Claim 10 (depends on 7)

The TFT substrate structure according to claim 7, wherein the material of the first passivation layer and the second passivation layer is silicon nitride, silicon oxide or its mixture.

### Claim 11

A manufacturing method of a TFT substrate comprising:
Step S1, providing a substrate, forming TFTs arranged in an array in the substrate, and depositing a first passivation layer covering all the TFTs;
Step S2, depositing a color resist on the first passivation layer and patterning to a color resist layer, a first color resist block and a second color resist block, wherein the height of the first color resist block is greater than the second of the color resist block;
Step S3, depositing a second passivation layer on the first passivation layer, the color resist layer, the first color resist block and the second color resist block;
Step S4, depositing a black photoresist on the second passivation layer and patterning to form a main integrated photoresist spacer, a sub-photoresist spacer and a black matrix, and a hole through the black matrix, the second passivation layer and the first passivation layer; wherein the main photoresist spacer is located above the first color resist block, the sub-photoresist spacer is located above the second color resist block; the hole is completely blocked by a drain of the TFT;
Step S5, depositing a transparent conductive film on the integrated main photoresist spacer, the sub-photoresist spacer and the black matrix and patterning to form a pixel electrode and a common electrode, and the pixel electrode is exposed through the hole connected to the drain of the TFT;
wherein, the patterning in Step S2 is performed with a slit diffraction type mask; and
the color resist deposited in Step S2 comprises a red color resist, a green color resist and a blue color resist;
wherein, the material of the transparent conductive film is indium tin oxide;
wherein the material of the first passivation layer and the second passivation layer is silicon nitride, silicon oxide or a combination;
wherein, the first color resist block and the second color resist block are island shaped.