# US 10,502,498 B2 · Slim vapor chamber > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,502,498 B2 - Document ID: US10502498B2 - Status: Granted - Kind: B2 - Application number: 15/215,084 - Filed: 2016-07-20 - Published: 2017-01-26 - Granted: 2019-12-10 - Earliest claimed: 2015-07-20 - Assignees: Delta Electronics, Inc. - Applicants: Delta Electronics, Inc. - Inventors: Shih-Lin Huang; Ting-Yuan Wu; Chiu-Kung Chen; Chun-Lung Chiu - Web page: https://patentgrep.com/patent/US10502498B2 ## CPC - F28D 15/0233: {the conduits having a particular shape, e.g. non-circular cross-section, annular (F28D15/0241, F28D15/0266 take precedence)} - F28D 15/046: {characterised by the material or the construction of the capillary structure} - F28F 3/00: Plate-like or laminated elements; Assemblies of plate-like or laminated elements (specially adapted for movement F28F5/00) - F28F 3/022: {the means being wires or pins} - F28F 13/06: by affecting the pattern of flow of the heat-exchange media {(F28F13/003 takes precedence; static flow control means in header boxes F28F9/026)} - F28D 2021/0028: {for cooling heat generating elements, e.g. for cooling electronic components or electric devices} - F28F 2225/04: for conduits - F28F 2255/18: sintered - F28D: HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS, IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT (fluid heaters having heat generating means and heat transferring means F24H; furnaces F27; details of heat-exchange apparatus of general) - F28F: DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION (water and air traps, air venting F16) ## Abstract A slim vapor chamber includes a first plate, a second plate and a capillary structure. The periphery of the second plate is connected with that of the first plate to form a chamber. The capillary structure is disposed in the chamber. At least one of a side of the first plate facing the second plate and a side of the second plate facing the first plate is formed with a plurality of supporting structures, which include a plurality of supporting pillars and a plurality of supporting plates, by an etching process. ## Claims ### Claim 1 A slim vapor chamber, comprising: a first plate; a second plate, wherein a periphery of the second plate is connected with a periphery of the first plate to form a chamber; and a capillary structure disposed on an inner wall of the chamber, wherein at least one of a side of the first plate facing the second plate and a side of the second plate facing the first plate is formed with a plurality of first supporting structures and second supporting structures, which comprise a plurality of supporting pillars and a plurality of supporting plates, by an etching process, wherein the first supporting structure is longer than the second supporting structure in height, the first supporting structures are located within an area defined by boundaries of the second plate and contact against the other one of the sides of the first plate and the second plate to form a vapor space between the first supporting structures to increase a vapor flowing speed in the vapor space faster than in the rest of the chamber, and the second supporting structures contact against the capillary structure for backflow. ### Claim 2 (depends on 1) The slim vapor chamber of claim 1, wherein the first supporting structures and the second supporting structures are located within two regions, the supporting pillars are configured in one of the regions, and the supporting plates are configured in the other one of the regions. ### Claim 3 (depends on 1) The slim vapor chamber of claim 1, wherein at least one of the first supporting structures and the second supporting structures are a combination of the supporting pillars and the supporting plates, the supporting plates are arranged in rows, and the supporting pillars are disposed in intervals of the rows of the supporting plates. ### Claim 4 (depends on 3) The slim vapor chamber of claim 3, wherein the intervals of the rows of the supporting plates are ranged from 3 mm to 30 mm. ### Claim 5 (depends on 1) The slim vapor chamber of claim 1, wherein the supporting pillars are column pillars, cone pillars or reversed cone pillars. ### Claim 6 (depends on 1) The slim vapor chamber of claim 1, wherein a cross-section of the supporting pillar is circular, elliptic, triangular, rectangular, rhombic, trapezoidal, or polygonal. ### Claim 7 (depends on 1) The slim vapor chamber of claim 1, wherein the capillary structure is formed by a sintering process with a woven metal mesh or a metal powder. ### Claim 8 (depends on 1) The slim vapor chamber of claim 1, wherein a thickness of the slim vapor chamber is ranged from 0.2 mm to 0.6 mm. ### Claim 9 A slim vapor chamber, comprising: a first plate; a second plate, wherein a periphery of the second plate is connected with a periphery of the first plate to form a chamber; and a capillary structure disposed on an inner wall of the chamber, wherein a side of the second plate facing the first plate is formed with a plurality of first supporting structures and second supporting structures by an etching process, wherein the first supporting structure is longer than the second supporting structure in height, the first supporting structures are located within an area defined by boundaries of the second plate and contact against the first plate to form a vapor space between the first supporting structures to increase a vapor flowing speed in the vapor space faster than in the rest of the chamber, and the second supporting structures contact against the capillary structure for backflow. ### Claim 10 (depends on 9) The slim vapor chamber of claim 9, wherein the first supporting structures and the second supporting structures comprise a plurality of supporting pillars and a plurality of supporting plates; the first supporting structures and the second supporting structures are located within two regions of the second plate; the supporting pillars are configured in one of the regions; and the supporting plates are configured in the other one of the regions. ### Claim 11 (depends on 10) The slim vapor chamber of claim 10, wherein the supporting plates are arranged in rows, and the supporting pillars are disposed in intervals of the rows of the supporting plates. ### Claim 12 (depends on 11) The slim vapor chamber of claim 11, wherein the intervals of the rows of the supporting plates are ranged from 3 mm to 30 mm. ### Claim 13 (depends on 10) The slim vapor chamber of claim 10, wherein the supporting pillars are column pillars, cone pillars or reversed cone pillars. ### Claim 14 (depends on 10) The slim vapor chamber of claim 10, wherein a cross-section of one of the supporting pillars is circular, elliptic, triangular, rectangular, rhombic, trapezoidal, or polygonal. ### Claim 15 (depends on 9) The slim vapor chamber of claim 9, wherein the capillary structure is formed by a sintering process with a woven metal mesh or a metal powder. ### Claim 16 (depends on 9) The slim vapor chamber of claim 9, wherein a thickness of the slim vapor chamber is ranged from 0.2 mm to 0.6 mm. ### Claim 17 A slim vapor chamber, comprising: a first plate; a second plate, wherein a periphery of the second plate is connected with a periphery of the first plate to form a chamber; and a capillary structure disposed on an inner wall of the chamber, wherein a side of the second plate facing the first plate is formed with a plurality of first supporting structures and second supporting structures by an etching process, wherein the first supporting structure is longer than the second supporting structure in height, the first supporting structures contact against the first plate, and the second supporting structures contact against the capillary structure for backflow, wherein the first supporting structures and the second supporting structures comprise a plurality of supporting pillars and a plurality of supporting plates, the first supporting structures and the second supporting structures are located within two regions of the second plate, the supporting pillars are configured in one of the regions; and the supporting plates are configured in the other one of the regions, wherein the supporting plates are arranged in rows, and the supporting pillars are disposed in intervals of the rows of the supporting plates.