# US 10,501,998 B1 · Polycrystalline diamond compacts and applications therefor

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- Number: US 10,501,998 B1
- Document ID: US10501998B1
- Status: Granted
- Kind: B1
- Application number: 14/627,966
- Filed: 2015-02-20
- Granted: 2019-12-10
- Earliest claimed: 2013-01-04
- Assignees: US Synthetic Corporation
- Applicants: US Synthetic Corporation
- Inventors: Brandon Paul Linford; Cody William Knuteson; Jason Dean Blackburn; Daniel Call Mortensen; Steven Swan
- Web page: https://patentgrep.com/patent/US10501998B1

## CPC

- E21B 10/55: with preformed cutting elements
- B01J 3/06: Processes using ultra-high pressure, e.g. for the formation of diamonds; Apparatus therefor, e.g. moulds or dies (B01J3/04 takes precedence)
- B01J 3/062: {characterised by the composition of the materials to be processed}
- B24D 18/0009: {using moulds or presses}
- B24D 99/005: {Segments of abrasive wheels}
- C23F 1/02: Local etching
- C23F 1/28: for etching iron group metals
- B01J 2203/062: Diamond
- B01J 2203/0655: Diamond
- B23B 27/20: with diamond bits {or cutting inserts}
- E21B 10/567: with preformed cutting elements mounted on a distinct support, e.g. polycrystalline inserts
- E21B: EARTH OR ROCK DRILLING; OBTAINING OIL, GAS, WATER, SOLUBLE OR MELTABLE MATERIALS OR A SLURRY OF MINERALS FROM WELLS
- B01J: CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B24D: TOOLS FOR GRINDING, BUFFING OR SHARPENING (abrading-bodies specially designed for tumbling apparatus, e.g. abrading-balls B24B31/14; honing tools B24B33/08; lapping tools B24B37/11)
- C23F: NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE (working metal by laser beams B23K26/00; desurfacing by applying flames B23K7/00; working of metal by electro-erosion B23H; producing decorative effects by removing surface material, e.g. by engraving, by etching, B44C1/22; electrolytic etching or polishing C25F); INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- B23B: TURNING; BORING (arrangements for copying or controlling B23Q)

## Abstract

Embodiments relate to polycrystalline diamond compacts (“PDCs”) including a polycrystalline diamond (“PCD”) table having a diamond grain size distribution selected for improving performance and/or leachability. In an embodiment, a PDC includes a PCD table bonded to a substrate. The PCD table includes a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween. The plurality of diamond grains includes a first amount being about 5 weight % to about 65 weight % of the plurality of diamond grains and a second amount being about 18 weight % to about 95 weight % of the plurality of diamond grains. The first amount exhibits a first average grain size of about 0.5 μm to about 30 μm. The second amount exhibits a second average grain size that is greater than the first average grain size and is about 10 μm to about 65 μm. Other embodiments are directed to methods of forming PDCs, and various applications for such PDCs in rotary drill bits, bearing apparatuses, and wire-drawing dies.

## Claims

### Claim 1

A polycrystalline diamond compact, comprising:
a substrate; and
a polycrystalline diamond table bonded to the substrate, the polycrystalline diamond table including a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween, the plurality of diamond grains including:
a first amount comprising about 15 weight % to about 40 weight % of the plurality of diamond grains, the first amount exhibiting a first average grain size of about 0.5 μm to about 14 μm;
a second amount comprising about 50 weight % to about 70 weight % of the plurality of diamond grains, the second amount exhibiting a second average grain size of about 15 μm to about 24 μm; and
a third amount comprising about 5 weight % to about 35 weight % of the plurality of diamond grains, the third amount exhibiting a third average grain size of about 25 μm to about 40 μm.

### Claim 2 (depends on 1)

The polycrystalline diamond compact of claim 1, wherein the first average grain size is about 0.5 μm to about 5 μm and the second average grain size is about 15 μm to about 20 μm.

### Claim 3 (depends on 1)

The polycrystalline diamond compact of claim 1, wherein the first average grain size is about 1 μm to about 3 μm and the second average grain size is about 15 μm to about 18 μm.

### Claim 4 (depends on 1)

The polycrystalline diamond compact of claim 1, wherein the first average grain size is about 2 μm.

### Claim 5 (depends on 1)

The polycrystalline diamond compact of claim 1, wherein the first average grain size is about 1.5 μm to about 2.5 μm and the second average grain size is about 15 μm to about 17 μm.

### Claim 6 (depends on 1)

The polycrystalline diamond compact of claim 1, wherein the first average grain size is about 2 μm and the second average grain size is about 16 μm.

### Claim 7 (depends on 1)

The polycrystalline diamond compact of claim 1, wherein the first average grain size is about 0.5 μm to about 5 μm.

### Claim 8 (depends on 1)

The polycrystalline diamond compact of claim 1, wherein the first average grain size is about 2 μm and the third average grain size is about 30 μm.

### Claim 9 (depends on 1)

The polycrystalline diamond compact of claim 1, wherein the first amount comprises about 20 weight % to about 30 weight % of the plurality of diamond grains, the second amount comprises about 55 weight % to about 65 weight % of the plurality of diamond grains, and the third amount comprises about 10 weight % to about 20 weight % of the plurality of diamond grains.

### Claim 10 (depends on 9)

The polycrystalline diamond compact of claim 9, wherein the third average grain size is about 25 μm to about 35 μm.

### Claim 11 (depends on 9)

The polycrystalline diamond compact of claim 9, wherein the first average grain size is about 1 μm to about 3 μm, the second average grain size is about 15 μm to about 18 μm, and the third average grain size is about 27 μm to about 33 μm.

### Claim 12 (depends on 9)

The polycrystalline diamond compact of claim 9, wherein the first average grain size is about 2 μm, the second average grain size is about 16 μm, and the third average grain size is about 30 μm.

### Claim 13 (depends on 1)

The polycrystalline diamond compact of claim 1, wherein the polycrystalline diamond table includes an additive in a range from greater than 0 weight % to about 5 weight % of the polycrystalline diamond table.

### Claim 14 (depends on 13)

The polycrystalline diamond compact of claim 13, wherein the additive includes boron and the range is from greater than 0 weight % to about 0.5 weight % of the polycrystalline diamond table.

### Claim 15 (depends on 1)

The polycrystalline diamond compact of claim 1, wherein the polycrystalline diamond table includes at least one exterior surface and a leached region extending inwardly from the at least one exterior surface to a depth of 200 μm to about 600 μm.

### Claim 16

A method of fabricating a polycrystalline diamond compact, comprising:
mixing a plurality of diamond particles having at least trimodal distribution including:
a first amount comprising about 15 weight % to about 40 weight % of the plurality of diamond particles that exhibits a first average particle size of about 0.5 μm to about 14 μm;
a second amount comprising about 50 weight % to about 70 weight % of the plurality of diamond particles that exhibits a second average particle size of about 15 μm to about 24 μm; and
a third amount comprising about 5 weight % to about 35 weight % of the plurality of diamond particles that exhibits a third average particle size of about 25 μm to about 40 μm;
enclosing the plurality of diamond particles and a substrate in a pressure transmitting medium to form a cell assembly; and
subjecting the cell assembly to a high-pressure/high-temperature process to form a polycrystalline diamond table bonded to the substrate, the polycrystalline diamond table including a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween.

### Claim 17 (depends on 16)

The method of claim 16, wherein the first average particle size is about 1 μm to about 3 μm and the second average particle size is about 15 μm to about 18 μm.

### Claim 18 (depends on 16)

The method of claim 16, wherein the first average particle size is about 2 μm and the second average particle size is about 16 μm.

### Claim 19 (depends on 16)

The method of claim 16, wherein the first average particle size is about 0.5 μm to about 5 μm.

### Claim 20 (depends on 16)

The method of claim 16, wherein the first average particle size is about 1.5 μm to about 2.5 μm and the second average particle size is about 15 μm to about 17 μm.

### Claim 21 (depends on 16)

The method of claim 16, wherein the first average particle size is about 2 μm and the second average particle size is about 16 μm.

### Claim 22 (depends on 16)

The method of claim 16, wherein the first average particle size is about 1 μm to about 3 μm and the third average particle size is about 27 μm to about 33 μm.

### Claim 23 (depends on 16)

The method of claim 16, wherein the first average particle size is about 2 μm and the third average particle size is about 30 μm.

### Claim 24 (depends on 16)

The method of claim 16, wherein the first amount comprises about 20 weight % to about 30 weight % of the plurality of diamond grains, the second amount comprises about 55 weight % to about 65 weight %, and the third amount comprises about 10 weight % to about 20 weight % of the plurality of diamond particles.

### Claim 25 (depends on 24)

The method of claim 24, wherein the third amount comprises about 15 weight % of the plurality of diamond particles, the third average diamond particle size being about 30 μm.

### Claim 26 (depends on 16)

The method of claim 16, further comprising mixing boron with the plurality of diamond particles in an amount greater than 0 weight % to about 5 weight %.

### Claim 27 (depends on 16)

The method of claim 16, wherein the cell assembly includes the substrate positioned at least proximate to the plurality of diamond particles.

### Claim 28

A rotary drill bit, comprising:
a bit body including a leading end structure configured to facilitate drilling a subterranean formation; and
a plurality of cutting elements mounted to the leading end structure of the bit body, at least one of the plurality of cutting elements including:
a substrate; and
a polycrystalline diamond table bonded to the substrate, the polycrystalline diamond table including a plurality of diamond grains exhibiting diamond-to-diamond bonding therebetween, the plurality of diamond grains including:
a first amount comprising about 15 weight % to about 40 weight % of the plurality of diamond grains that exhibits a first average grain size of about 0.5 μm to about 14 μm;
a second amount comprising about 50 weight % to about 70 weight % of the plurality of diamond grains that exhibits a second average grain size of about 15 μm to about 24 μm; and
a third amount comprising about 5 weight % to about 35 weight % of the plurality of diamond grains that exhibits a third average grain size of about 25 μm to about 40 μm.