# US 10,501,866 B2 · Gas distribution apparatus for improved film uniformity in an epitaxial system

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- Number: US 10,501,866 B2
- Document ID: US10501866B2
- Status: Granted
- Kind: B2
- Application number: 15/410,503
- Filed: 2017-01-19
- Published: 2017-09-14
- Granted: 2019-12-10
- Earliest claimed: 2016-03-09
- Assignees: ASM IP Holding B.V.
- Applicants: ASM IP Holding B.V.
- Inventors: Stephen Dale Coomer; Robert Vyne; Timo Bergman; Lee Bode; Wentao Wang
- Web page: https://patentgrep.com/patent/US10501866B2

## CPC

- C30B 25/14: Feed and outlet means for the gases; Modifying the flow of the reactive gases
- C23C 16/45561: {Gas plumbing upstream of the reaction chamber}
- C23C 16/45582: {Expansion of gas before it reaches the substrate}
- C23C 16/45587: {Mechanical means for changing the gas flow}
- C30B 25/165: {the flow of the reactive gases}
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)

## Abstract

A gas distribution system is disclosed in order to obtain better film uniformity on a wafer. The better film uniformity may be achieved by utilizing an expansion plenum and a plurality of, for example, proportioning valves to ensure an equalized pressure or flow along each gas line disposed above the wafer.

## Claims

### Claim 1

A reaction system for processing a substrate, comprising:
a reaction chamber, the reaction chamber holding a wafer to be processed;
a gas source;
an inlet gas feed line having a first diameter and configured to receive a gas from the gas source;
a pair of symmetrical feeds, the symmetrical feeds configured to split a flow of the gas from the inlet gas feed line;
an expansion plenum having a second diameter greater than the first diameter and a plurality of outlet ports, wherein the expansion plenum receives gas from the pair of symmetrical feeds; and
a plurality of valves interposed between the expansion plenum and the reaction chamber, the plurality of valves configured to control flow of the gas from the plurality of outlet ports into the reaction chamber; and
wherein the plurality of valves maintains a substantially equalized pressure across the plurality of outlet ports.

### Claim 2 (depends on 1)

The reaction system of claim 1, wherein the plurality of valves comprise proportioning or metering valves.

### Claim 3 (depends on 2)

The reaction system of claim 2, wherein the plurality of valves controls a flow rate of the gas to a lower gas feed line.

### Claim 4 (depends on 1)

The reaction system of claim 1, wherein the plurality of valves are configured to create restrictions to counteract a cascading flow of gas across the expansion plenum.

### Claim 5 (depends on 1)

The reaction system of claim 1, wherein the inlet gas feed line comprises at least one of: a gas line, bends, and fittings.

### Claim 6 (depends on 1)

The reaction system of claim 1, further comprising an injection flange coupled to the plurality of outlet ports.

### Claim 7 (depends on 1)

The reaction system of claim 1, wherein the expansion plenum is configured to receive the gas from opposite ends of the expansion plenum through the pair of symmetrical feeds.

### Claim 8 (depends on 1)

The reaction system of claim 1, wherein the expansion plenum reduces a velocity of the gas when the gas fills the expansion plenum.

### Claim 9 (depends on 1)

The reaction system of claim 1, wherein a substantially equal flow of gas across the wafer is achieved.

### Claim 10 (depends on 1)

The reaction system of claim 1, further comprising a gas distribution block configured to receive the gas from the plurality of valves and provide the gas to the reaction chamber.

### Claim 11 (depends on 10)

The reaction system of claim 10, wherein the gas distribution block further comprises: a plurality of base gas metering valves; a plurality of dopant gas metering valves; and a monoblock.

### Claim 12 (depends on 11)

The reaction system of claim 11, wherein the plurality of base gas metering valves and the plurality of dopant gas metering valves are mounted to the monoblock.

### Claim 13

A gas manifold system, comprising:
an inlet gas feed line configured to receive a gas from a gas source;
a pair of symmetrical feeds, the symmetrical feeds having a first diameter and configured to split a flow of the gas from the inlet gas feed line;
an expansion plenum having a second diameter greater than the first diameter and a plurality of outlet ports, wherein the expansion plenum receives gas from the pair of symmetrical feeds; and
a plurality of valves interposed between the expansion plenum and the reaction chamber, the plurality of valves configured to control flow of the gas through the plurality of outlet ports of the expansion plenum; and
wherein the plurality of valves maintains a substantially equalized pressure across the plurality of outlet ports.

### Claim 14 (depends on 13)

The gas manifold system of claim 13, wherein the plurality of valves comprise proportioning or metering valves.

### Claim 15 (depends on 14)

The gas manifold system of claim 14, wherein the plurality of valves controls a flow rate of the gas to a lower gas feed line.

### Claim 16 (depends on 13)

The gas manifold system of claim 13, wherein the plurality of valves are configured to create restrictions to counteract a cascading flow of gas across the expansion plenum.

### Claim 17 (depends on 13)

The gas manifold system of claim 13, further comprising a gas distribution block configured to receive the gas from the plurality of valves and provide the gas to the reaction chamber.

### Claim 18 (depends on 17)

The gas manifold system of claim 17, wherein the gas distribution block further comprises: a plurality of base gas metering valves; a plurality of dopant gas metering valves; and a monoblock.