# US 10,501,864 B2 · Method for manufacturing a perovskite crystal structure and apparatus for manufacturing a perovskite crystal structure therefor > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,501,864 B2 - Document ID: US10501864B2 - Status: Granted - Kind: B2 - Application number: 15/933,766 - Filed: 2018-03-23 - Published: 2018-08-02 - Granted: 2019-12-10 - Earliest claimed: 2015-09-30 - Assignees: Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University) - Applicants: Iucf-Hyu (Industry-University Cooperation Foundation Hanyang University) - Inventors: Myung Mo Sung; Jang Mi Baek; Lynn Lee - Web page: https://patentgrep.com/patent/US10501864B2 ## CPC - C30B 7/06: using non-aqueous solvents - C07F 7/24: Lead compounds - C30B 29/12: Halides - C30B 29/54: Organic compounds - H01G 9/0029: {Processes of manufacture} - H01G 9/2004: {characterised by the electrolyte, e.g. comprising an organic electrolyte} - H10K 71/00: Manufacture or treatment specially adapted for the organic devices covered by this subclass - H10K 71/13: using printing techniques, e.g. ink-jet printing or screen printing - H10K 85/50: Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3 - H10K 30/50: Photovoltaic [PV] devices - H10K 71/15: characterised by the solvent used - Y02E 10/542: Dye sensitized solar cells - Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR - C07F: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM (metal-containing porphyrins C07D487/22) - H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10) - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION - Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS ## Abstract A method for manufacturing a perovskite crystal structure includes preparing a substrate, disposing a stamp having a roll shape on the substrate, injecting a perovskite precursor solution between the substrate and the stamp, and drying the precursor solution to manufacture a perovskite crystal structure. The stamp rolls in a first direction on the substrate, and the precursor solution is continuously crystallized in the first direction between the substrate and the stamp to manufacture the perovskite crystal structure. ## Claims ### Claim 1 A method for manufacturing a perovskite crystal structure, the method comprising: preparing a substrate; disposing a stamp having a roll shape on the substrate; injecting a perovskite precursor solution between the substrate and the stamp; and drying the precursor solution to manufacture a perovskite crystal structure, wherein the stamp rolls in a first direction on the substrate, and wherein the precursor solution is continuously crystallized in the first direction between the substrate and the stamp to manufacture the perovskite crystal structure. ### Claim 2 (depends on 1) The method of claim 1, wherein the stamp rolls from a first region of the substrate to a second region of the substrate while rotating about a rotation axis parallel to a second direction perpendicular to the first direction. ### Claim 3 (depends on 2) The method of claim 2, wherein the precursor solution is supplied onto an outer circumferential surface of the stamp, and wherein the precursor solution flows along the outer circumferential surface of the stamp so as to be injected between the substrate and the stamp. ### Claim 4 (depends on 3) The method of claim 3, wherein a crystal nucleus is generated earlier in the precursor solution provided on the first region of the substrate than in the precursor solution provided on the second region of the substrate. ### Claim 5 (depends on 4) The method of claim 4, wherein the drying of the precursor solution comprises: generating a crystal from the precursor solution and removing a solvent from the precursor solution, by a heating process. ### Claim 6 (depends on 5) The method of claim 5, wherein the stamp comprises: protrusion portions which are provided on the outer circumferential surface and have loop shapes surrounding the outer circumferential surface. ### Claim 7 (depends on 6) The method of claim 6, wherein the outer circumferential surface of the stamp includes a flat portion between the protrusion portions, and wherein the precursor solution fills a space between the protrusion portions and between the substrate and the flat portion. ### Claim 8 (depends on 7) The method of claim 7, wherein the space filled with the precursor solution is adjusted by a distance between the protrusion portions arranged in the second direction on the outer circumferential surface of the stamp and is adjusted by a distance between the flat portion and the substrate in a third direction perpendicular to the first and second directions. ### Claim 9 (depends on 8) The method of claim 8, wherein a thickness of the perovskite crystal structure formed between the substrate and the flat portion of the stamp is greater than a thickness of the perovskite crystal structure formed between the substrate and the protrusion portion of the stamp. ### Claim 10 (depends on 9) The method of claim 9, wherein a thickness of the perovskite crystal structure is determined depending on the distance between the substrate and the flat portion of the stamp. ### Claim 11 (depends on 1) The method of claim 1, wherein a single-crystallinity of the perovskite crystal structure is adjusted by adjusting a thickness of the perovskite crystal structure. ### Claim 12 (depends on 1) The method of claim 1, wherein the perovskite crystal structure is a single crystal. ### Claim 13 An apparatus for manufacturing a perovskite crystal structure, the apparatus comprising: a substrate; a stamp having a roll shape on the substrate; and a supply part for supplying a perovskite precursor solution onto an outer circumferential surface of the stamp, wherein the stamp rolls from a first region of the substrate to a second region of the substrate, and wherein the stamp comprises: protrusion portions which are provided on the outer circumferential surface and have loop shapes surrounding the outer circumferential surface; and a flat portion between the protrusion portions, wherein the protrusion portions are separated from each other in a length direction of the stamp. ### Claim 14 (depends on 13) The apparatus of claim 13, wherein the supply part moves while supplying the precursor solution onto the outer circumferential surface of the stamp, along a direction in which the stamp rolls from the first region to the second region of the substrate. ### Claim 15 (depends on 14) The apparatus of claim 14, wherein the precursor solution provided on the substrate is crystallized in a direction from the first region toward the second region. ### Claim 16 A method for manufacturing a crystal structure, the method comprising: providing a precursor solution on a substrate; and drying the precursor solution to manufacture a crystal structure, wherein the precursor solution is continuously crystallized from a first region of the precursor solution to a second region of the precursor solution, and wherein a single-crystallinity of the crystal structure is adjusted depending on a thickness of the precursor solution. ### Claim 17 (depends on 16) The method of claim 16, wherein the first region of the precursor solution is provided on the substrate prior to the second region of the precursor solution. ### Claim 18 (depends on 16) The method of claim 16, wherein the precursor solution includes a perovskite precursor solution. ### Claim 19 (depends on 16) The method of claim 16, wherein the crystal structure is a single crystal.