# US 10,501,853 B2 · Etchant composition, method for etching multilayered film, and method for preparing display device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,501,853 B2 - Document ID: US10501853B2 - Status: Granted - Kind: B2 - Application number: 15/518,130 - Filed: 2015-10-07 - Published: 2017-10-26 - Granted: 2019-12-10 - Earliest claimed: 2014-10-10 - Assignees: Samyoung Pure Chemicals Co., Ltd.; Mitsubishi Gas Chemical Company, Inc.; Samsung Display Co., Ltd. - Applicants: Samyoung Pure Chemicals Co., Ltd.; Mitsubishi Gas Chemical Company, Inc.; Samsung Display Co., Ltd. - Inventors: Jung-Ig Jeon; Chi-Sung Ihn; Mi-Soon Lee; Hyun-Eok Shin; Joon-Woo Bae - Web page: https://patentgrep.com/patent/US10501853B2 ## CPC - C23F 1/18: for etching copper or alloys thereof - C23F 1/26: for etching refractory metals - C23F 1/30: for etching other metallic material - H10D 86/021: {of multiple TFTs} - H10P 50/667: {by liquid etching only} - H10D 86/441: {Interconnections, e.g. scanning lines} - H10D 86/60: wherein the TFTs are in active matrices - C23F: NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE (working metal by laser beams B23K26/00; desurfacing by applying flames B23K7/00; working of metal by electro-erosion B23H; producing decorative effects by removing surface material, e.g. by engraving, by etching, B44C1/22; electrolytic etching or polishing C25F); INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract Embodiments provide an etchant composition including (A) a copper ion source, (B) a source of an organic acid ion having one or more carboxyl groups in a molecule, (C) a fluoride ion source, (D) an etching controller, a surface oxidizing power enhancer or a combination thereof as a first additive, and (E) a surfactant as a second additive; a method for etching a multilayered film; and a method for preparing a display device. ## Claims ### Claim 1 An etchant composition, comprising: (A) a copper ion source; (B) a source of an organic acid ion having one or more carboxyl groups in a molecule; (C) a fluoride ion source; (D) an etching controller, a surface oxidizing power enhancer, or a combination thereof, as a first additive; and (E) a surfactant, as a second additive, wherein the etchant composition has a pH value of 3 or less. ### Claim 2 (depends on 1) The etchant composition of claim 1, wherein, in the etchant composition, the contents of (A) to (E) are 0.02 mol/kg to 1.0 mol/kg of (A) the copper ion source; 0.01 mol/kg to 3.0 mol/kg of (B) the source of an organic acid ion having one or more carboxyl groups in a molecule; 0.01 mol/kg to 1.0 mol/kg of (C) the fluoride ion source; 0.01 mol/kg to 3.0 mol/kg of (D) the first additive; and 1.0 ppm to 30,000 ppm of (E) the second additive. ### Claim 3 (depends on 1) The etchant composition of claim 1, wherein (A) the copper ion source is at least one selected from the group consisting of copper, copper sulfate, copper nitrate, copper chloride, copper fluoride, copper phosphide, copper hydroxide, copper acetate, copper citrate, copper lactate, copper oleate, a copper silicon compound, copper bromide, and copper carbonate. ### Claim 4 (depends on 1) The etchant composition of claim 1, wherein (B) the source of an organic acid ion having one or more carboxyl groups in a molecule is at least one selected from the group consisting of formic acid, acetic acid, propionic acid, butyric acid, caproic acid, caprylic acid, capric acid, lauric acid, stearic acid, gluconic acid, citric acid, tartaric acid, malic acid, succinic acid, oxalic acid, maleic acid, and an ammonium salt thereof. ### Claim 5 (depends on 1) The etchant composition of claim 1, wherein a mixing ratio of (B) the source of an organic acid ion with respect to (A) the copper ion source is 0.01 to 150.0 times on a molar basis. ### Claim 6 (depends on 1) The etchant composition of claim 1, wherein (C) the fluoride ion source is at least one selected from the group consisting of hydrofluoric acid, ammonium fluoride, acid ammonium fluoride, potassium fluoride, ammonium fluoroborate, potassium bisulfite, potassium borofluoride, sodium fluoride, sodium bisulfite, aluminum fluoride, boron fluoride, lithium fluoride, calcium fluoride, and copper fluoride. ### Claim 7 (depends on 1) The etchant composition of claim 1, wherein a mixing ratio of (C) the fluoride ion source with respect to (A) the copper ion source is 0.01 to 50.0 times on a molar basis. ### Claim 8 (depends on 1) The etchant composition of claim 1, wherein (D) the etching controller, as a first additive, is a halogen ion source, except for a fluorine ion. ### Claim 9 (depends on 8) The etchant composition of claim 8, wherein the halogen ion source, except for the fluorine ion, is at least one selected from the group consisting of hydrochloric acid, potassium chloride, sodium chloride, ammonium chloride, bromic acid, potassium bromide, sodium bromide, ammonium bromide, iodic acid, potassium iodide, sodium iodide, and ammonium iodide. ### Claim 10 (depends on 1) The etchant composition of claim 1, wherein (D) the surface oxidizing power enhancer, as a first additive, is an inorganic acid. ### Claim 11 (depends on 10) The etchant composition of claim 10, wherein the inorganic acid is at least one selected from the group consisting of sulfuric acid, nitric acid, phosphoric acid, and hydrochloric acid. ### Claim 12 (depends on 1) The etchant composition of claim 1, wherein a mixing ratio of (D) the first additive with respect to (A) the copper ion source is 0.01 to 150.0 times on a molar basis. ### Claim 13 (depends on 1) The etchant composition of claim 1, wherein (E) the surfactant, as a second additive, is a nonionic surfactant. ### Claim 14 (depends on 13) The etchant composition of claim 13, wherein the nonionic surfactant is at least one selected from the group consisting of polyethyleneglycol, polypropyleneglycol, polyetherpolyol, polyglycololeicacid, gelatin, and an ethylene oxide (EO)-propylene oxide (PO) copolymer. ### Claim 15 (depends on 1) The etchant composition of claim 1, wherein the etchant composition further comprises (F) an alkali metal salt, as a third additive. ### Claim 16 (depends on 15) The etchant composition of claim 15, wherein (F) the alkali metal salt, as a third additive, is at least one selected from the group consisting of an alkali metal salt containing halogen, an alkali metal salt of an organic acid having one or more carboxyl groups in a molecule, and an alkali metal salt of a strong alkali. ### Claim 17 (depends on 15) The etchant composition of claim 15, wherein, in the etchant composition, the content of (F) the third additive is 0.01 mol/kg to 2.0 mol/kg. ### Claim 18 (depends on 15) The etchant composition of claim 15, wherein a mixing ratio of (F) the third additive with respect to (A) the copper ion source is 0.01 to 100.0 times on a molar basis. ### Claim 19 (depends on 1) The etchant composition of claim 1, wherein the etchant composition is provided for etching a multilayered film containing copper and titanium.