# US 10,501,841 B2 · Deposition mask, method for manufacturing the same, and method for manufacturing organic EL display apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,501,841 B2 - Document ID: US10501841B2 - Status: Granted - Kind: B2 - Application number: 16/078,881 - Filed: 2016-07-27 - Published: 2019-02-21 - Granted: 2019-12-10 - Earliest claimed: 2016-02-23 - Assignees: Hon Hai Precision Industry Co., Ltd. - Applicants: Hon Hai Precision Industry Co., Ltd. - Inventors: Susumu Sakio; Katsuhiko Kishimoto - Web page: https://patentgrep.com/patent/US10501841B2 ## CPC - C23C 14/042: {using masks} - C23C 14/04: Coating on selected surface areas, e.g. using masks - C23C 16/042: {using masks} - H10K 59/122: Pixel-defining structures or layers, e.g. banks - H10K 59/35: comprising red-green-blue [RGB] subpixels - H10K 71/166: {using selective deposition, e.g. using a mask} - H10K 71/40: Thermal treatment, e.g. annealing in the presence of a solvent vapour - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract A deposition mask capable of performing high-definition patterning while suppressing position gap between a substrate for vapor deposition and an opening arrangement of the deposition mask during vapor deposition and a manufacturing method thereof are provided. A deposition mask (1) includes a resin film (2) having an opening (4) pattern for forming a thin layer pattern by vapor deposition on a substrate for vapor deposition. The deposition mask (1) includes a low-emissivity layer (5) whose emissivity is lower than that of the resin film (2), which is formed at least partly on a surface of the resin film (2) facing a vapor deposition source, thereby suppressing temperature rise of the resin film (2) due to heat radiated from the vapor deposition source. ## Claims ### Claim 1 A deposition mask including a resin film having an opening pattern for film forming a thin layer pattern by vapor deposition on a substrate for vapor deposition, wherein a low-emissivity layer whose emissivity is lower than the emissivity of said resin film is formed on at least a part of a surface of said resin film facing a vapor deposition source, and a high-emissivity layer whose emissivity is lower than the emissivity of said resin film is formed on a surface of said resin film that is to be brought into contact with said substrate for vapor deposition. ### Claim 2 (depends on 1) The deposition mask according to claim 1, wherein an adhesion layer capable of improving adhesion between said resin film and said low-emissivity layer and/or said high-emissivity layer is provided between said resin film and said low-emissivity layer and/or said high-emissivity layer. ### Claim 3 (depends on 1) The deposition mask according to claim 1, wherein the emissivity of said low-emissivity layer at the temperature not lower than 22° C. and not higher than 60° C. in the wavelength region not less than 8,700 nm and not greater than 9,800 nm is 0.3 or less. ### Claim 4 (depends on 3) The deposition mask according to claim 3, wherein said low-emissivity layer is a layer formed of Al Ni, Cr, Mo, Cu or Ti and having a substantially mirror surface. ### Claim 5 (depends on 1) The deposition mask according to claim 1, wherein said high-emissivity layer is made of a material whose emissivity is 0.5 or higher when the temperature is not lower than 22° C. and not higher than 60° C. and the wavelength region is not less than 8,700 nm and not greater than 9,800 nm. ### Claim 6 (depends on 5) The deposition mask according to claim 5, wherein said high-emissivity layer is made of Al2O3, AiTiN, CrO2, Cr2O3,MoO2, MoO3, SiC or graphite and has a surface roughness not less than 0.1 μm and not greater than 3.0 μm in root-mean-square height. ### Claim 7 (depends on 1) The deposition mask according to claim 1, wherein a metal support layer is provided on a part of a surface of said resin film on the side where said low-emissivity layer is to be provided. ### Claim 8 A method for manufacturing a deposition mask including a resin film having an opening pattern and usable in vapor depositing a vapor deposition material, and having a low-emissivity layer whose emissivity is lower than the emissivity of said resin film on at least a part of a surface of said resin film on a side facing a vapor deposition source, the method comprising; forming said low-emissivity layer after stretching and fixing said resin film to a support frame, and forming a high-emissivity layer on a surface of said resin film opposite to the side facing said vapor deposition source after fixing said resin film to said support frame, and before forming said low-emissivity layer or after forming said low-emissivity layer, wherein an emissivity of said high-emissivity layer is higher than an emissivity of said surface of said resin film provided with said low-emissivity layer. ### Claim 9 (depends on 8) The method for manufacturing a deposition mask according to claim 8, wherein a metal support layer is brought into close contact with a surface of said resin film on the side where said low-emissivity layer is to he formed, before said resin film is fixed to said support frame. ### Claim 10 (depends on 8) The method for manufacturing a deposition mask according to claim 8, further comprising: forming an adhesion layer capable of improving adhesion between said resin film and said low-emissivity layer and/or said high-emissivity layer by at least one method selected from sputtering method and ion plating method, before forming said low-emissivity layer and/or said high-emissivity layer. ### Claim 11 (depends on 8) The method for manufacturing a deposition mask according to claim 8, wherein the formation of said low-emissivity layer is performed by at least one method selected from spattering method, vacuum deposition method, ion plating method, CVD method, gloss plating method, and coating method. ### Claim 12 (depends on 8) The method for manufacturing a deposition mask according to claim 8, wherein the formation of said high-emissivity layer is performed by at least one method selected from sputtering method, vacuum deposition method, CVD method, cold spray method, plating method, and coating method. ### Claim 13 (depends on 1) A method for manufacturing an organic EL display apparatus by depositing an organic layer on an apparatus substrate, the method comprising: positioning and overlapping the deposition mask according to claim 1 on said apparatus substrate having at least a TFT and a first electrode formed on a support substrate; forming an organic deposition layer by vapor depositing an organic material on said first electrode; and forming a second electrode on said deposition layer.