# US 10,501,710 B2 · Cleaner composition and preparation of thin substrate

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- Number: US 10,501,710 B2
- Document ID: US10501710B2
- Status: Granted
- Kind: B2
- Application number: 15/490,041
- Filed: 2017-04-18
- Published: 2017-10-26
- Granted: 2019-12-10
- Earliest claimed: 2016-04-26
- Assignees: Shin-Etsu Chemical Co., Ltd.
- Applicants: Shin-Etsu Chemical Co., Ltd.
- Inventors: Masaya Ueno; Hideyoshi Yanagisawa
- Web page: https://patentgrep.com/patent/US10501710B2

## CPC

- C09J 183/04: Polysiloxanes
- H10P 72/74: {using temporarily an auxiliary support}
- B08B 3/04: Cleaning involving contact with liquid
- B08B 3/08: the liquid having chemical or dissolving effect
- B08B 3/10: with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- C11D 3/044: {Hydroxides or bases}
- C11D 3/181: {linear}
- C11D 3/2003: {Alcohols; Phenols}
- C11D 3/2006: {Monohydric alcohols}
- C11D 3/201: {linear}
- C11D 3/2041: {Dihydric alcohols}
- C11D 3/2065: {Polyhydric alcohols}
- C11D 3/2068: {Ethers}
- C11D 3/30: Amines; Substituted amines {; Quaternized amines}
- C11D 7/06: Hydroxides
- C11D 7/261: {Alcohols; Phenols}
- C11D 7/3209: {Amines or imines with one to four nitrogen atoms; Quaternized amines}
- C11D 7/5022: {containing oxygen}
- C11D 7/5027: {Hydrocarbons}
- H10P 50/283: {by chemical means}
- H10P 50/287: {by chemical means}
- H10P 52/00: Grinding, lapping or polishing of wafers, substrates or parts of devices
- H10P 70/20: {Cleaning during device manufacture}
- H10P 70/27: {during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers}
- H10P 72/7402: {Wafer tapes, e.g. grinding or dicing support tapes}
- C08G 77/16: to hydroxy groups
- C11D 2111/22: Electronic devices, e.g. PCBs or semiconductors
- H10P 72/7416: {used during dicing or grinding}
- C09J: ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES (preparation of glue or gelatine C09H)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B08B: CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- C11D: DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C08G: MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS

## Abstract

A cleaner composition consisting essentially of (A) 90.0-99.9 wt % of an organic solvent and (B) 0.1-10.0 wt % of a C3-C6 alcohol, and containing (C) 20-300 ppm of sodium and/or potassium is effective for cleaning a surface of a silicon semiconductor substrate. A satisfactory degree of cleanness is achieved within a short time and at a high efficiency without causing corrosion to the substrate.

## Claims

### Claim 1

A cleaner composition for cleaning a surface of a substrate, consisting essentially of
(A) 90.0 to 99.9% by weight of an organic solvent exclusive of an alcohol of 3 to 6 carbon atoms, and
(B) 0.1 to 10.0% by weight of an alcohol of 3 to 6 carbon atoms,
the composition containing (C) sodium and/or potassium in an amount of 0.002 to 0.03 part by weight per 100 parts by weight of components (A) and (B) combined,
wherein the organic solvent (A) is an aliphatic hydrocarbon of 5 to 20 carbon atoms or a dialkylene glycol dialkyl ether of 5 to 20 carbon atoms, wherein the composition is free of water.

### Claim 2 (depends on 1)

The cleaner composition of claim 1 wherein component (C) is present in the form of sodium hydroxide and/or potassium hydroxide.

### Claim 3 (depends on 1)

The cleaner composition of claim 1 wherein the organic solvent (A) is an aliphatic hydrocarbon of 5 to 20 carbon atoms.

### Claim 4 (depends on 1)

The cleaner composition of claim 1 wherein the organic solvent (A) is a dialkylene glycol dialkyl ether of 5 to 20 carbon atoms.

### Claim 5 (depends on 1)

The cleaner composition of claim 1, further comprising a quaternary ammonium salt.

### Claim 6 (depends on 1)

The cleaner composition of claim 1 wherein the substrate is a semiconductor substrate.

### Claim 7

A method for preparing a thin substrate, comprising the steps of
(a) forming an adhesive layer on a substrate or handle substrate from an adhesive composition and bonding the substrate and the handle substrate via the adhesive layer,
(b) processing the substrate bonded to the handle substrate,
(c) separating the substrate as processed from the handle substrate, the adhesive layer remaining on the substrate after separation, and
(d) cleaning away the adhesive layer on the substrate with the cleaner composition, wherein the cleaner composition consisting essentially of
(A) 90.0 to 99.9% by weight of an organic solvent exclusive of an alcohol of 3 to 6 carbon atoms, and
(B) 0.1 to 10.0% by weight of an alcohol of 3 to 6 carbon atoms,
the composition containing (C) sodium and/or potassium in an amount of 0.002 to 0.03 part by weight per 100 parts by weight of components (A) and (B) combined, wherein the organic solvent (A) is an aliphatic hydrocarbon of 5 to 20 carbon atoms or a dialkylene glycol dialkyl ether of 5 to 20 carbon atoms, wherein the composition is free of water.

### Claim 8 (depends on 7)

The method of claim 7 wherein the adhesive composition comprises a silicone compound.

### Claim 9 (depends on 8)

The method of claim 8 wherein the silicone compound is a partial dehydration condensate of a linear or branched organopolysiloxane having at least two silicon-bonded hydroxyl groups with an organopolysiloxane resin comprising R3SiO1/2 units wherein R is a monovalent hydrocarbon group and SiO2 units and containing a hydroxyl group.

### Claim 10 (depends on 1)

The cleaner composition of claim 1 wherein the aliphatic hydrocarbon of the organic solvent (A) is one or more kinds selected from the group consisting of octane, nonane, decane, undecane, dodecane, tetradecane, hexadecane, isooctane, isononane, isodecane, isododecane, alkylcyclohexanes, and p-menthane.

### Claim 11 (depends on 1)

The cleaner composition of claim 1, wherein the substrate surface cleaned with the cleaner composition has a contact angle with water of less than 100°.