# US 10,501,003 B2 · Semiconductor device, lighting device, and vehicle > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,501,003 B2 - Document ID: US10501003B2 - Status: Granted - Kind: B2 - Application number: 15/210,092 - Filed: 2016-07-14 - Published: 2017-01-19 - Granted: 2019-12-10 - Earliest claimed: 2015-07-17 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Hajime Kimura; Shunpei Yamazaki - Web page: https://patentgrep.com/patent/US10501003B2 ## CPC - F21S 41/141: Light emitting diodes [LED] - B60Q 1/00: Arrangement of optical signalling or lighting devices, the mounting or supporting thereof or circuits therefor (for lighting vehicle interior B60Q3/00) - F21S 43/14: Light emitting diodes [LED] - H10D 1/47: Resistors having no potential barriers - H10N 10/85: Thermoelectric active materials - H10N 19/00: Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00 - F21S: NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS - B60Q: ARRANGEMENT OF SIGNALLING OR LIGHTING DEVICES, THE MOUNTING OR SUPPORTING THEREOF OR CIRCUITS THEREFOR, FOR VEHICLES IN GENERAL - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR ## Abstract A novel semiconductor device is provided. The semiconductor device includes a first resistor and a second resistor. The first resistor and the second resistor are electrically connected in series. A resistance material of the first resistor includes a metal oxide, and a resistance material of the second resistor is different from the resistance material of the first resistor. The semiconductor device is configured to output a voltage corresponding to the resistance values of the first resistor and the second resistor. The voltage reflects the properties of the resistance materials of the first resistor and the second resistor. The semiconductor device may include a circuit for processing this voltage. In that case, the first resistor can be stacked over the circuit, resulting in the downsizing of the semiconductor device. ## Claims ### Claim 1 A semiconductor device comprising: an insulating layer; a first resistor over the insulating layer; and a second resistor covered with the insulating layer, wherein the insulating layer is between the first resistor and the second resistor, wherein the first resistor and the second resistor are electrically connected in series, wherein a resistance material of the first resistor includes a metal oxide, wherein the metal oxide includes indium, wherein a resistance material of the second resistor is different from the resistance material of the first resistor, wherein a resistance value of the second resistor has high temperature dependence, and wherein a resistance value of the first resistor has low temperature dependence. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein the second resistor is a thermistor, a resistance thermometer, or a thermocouple. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, wherein the resistance material of the second resistor includes silicon. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, wherein the metal oxide includes zinc. ### Claim 5 (depends on 1) A vehicle comprising: the semiconductor device according to claim 1; and a car body. ### Claim 6 (depends on 1) The semiconductor device according to claim 1, wherein the first resistor is a transistor. ### Claim 7 (depends on 1) The semiconductor device according to claim 1, wherein the second resistor is a transistor. ### Claim 8 (depends on 1) The semiconductor device according to claim 1, wherein the first resistor and the second resistor overlap each other. ### Claim 9 A semiconductor device comprising: an insulating layer; a first circuit comprising: a first resistor over the insulating layer; and a second resistor covered with the insulating layer; and a second circuit, wherein the insulating layer is between the first resistor and the second resistor, wherein a first terminal of the first resistor is electrically connected to a first terminal of the second resistor, wherein a resistance material of the first resistor includes a metal oxide, wherein the metal oxide includes indium, and wherein a resistance material of the second resistor is different from the resistance material of the first resistor, wherein a resistance value of the second resistor has high temperature dependence, wherein a resistance value of the first resistor has low temperature dependence, and wherein the second circuit is configured to process a voltage output from the first terminal of the first resistor and generate a signal. ### Claim 10 (depends on 9) The semiconductor device according to claim 9, further comprising an electronic component, wherein the electronic component includes a package and a die placed in the package, and wherein the first resistor and the second circuit are provided in the die. ### Claim 11 (depends on 9) The semiconductor device according to claim 9, further comprising an electronic component, wherein the electronic component includes a package and a die placed in the package, and wherein the first resistor, the second resistor, and the second circuit are provided in the die. ### Claim 12 (depends on 9) The semiconductor device according to claim 9, wherein the second resistor is a thermistor, a resistance thermometer, or a thermocouple. ### Claim 13 (depends on 9) The semiconductor device according to claim 9, wherein the resistance material of the second resistor includes silicon. ### Claim 14 (depends on 9) The semiconductor device according to claim 9, wherein the first resistor is stacked over the second circuit. ### Claim 15 (depends on 9) The semiconductor device according to claim 9, wherein the metal oxide includes zinc. ### Claim 16 (depends on 9) The semiconductor device according to claim 9, wherein a first voltage is configured to be input to a second terminal of the first resistor, and wherein a second voltage which is lower than the first voltage is configured to be input to a second terminal of the second resistor. ### Claim 17 (depends on 9) A vehicle comprising: the semiconductor device according to claim 9; and a car body. ### Claim 18 A semiconductor device comprising: an insulating layer; a first circuit comprising: a first resistor over the insulating layer; and a second resistor covered with the insulating layer; a second circuit electrically connected to the first circuit; a voltage generation circuit electrically connected to the second circuit; and an LED electrically connected to the voltage generation circuit, wherein the insulating layer is between the first resistor and the second resistor, wherein a first terminal of the first resistor is electrically connected to a first terminal of the second resistor, wherein a resistance material of the first resistor includes a metal oxide, wherein the metal oxide includes indium, and wherein a resistance material of the second resistor is different from the resistance material of the first resistor, wherein a resistance value of the second resistor has high temperature dependence, wherein a resistance value of the first resistor has low temperature dependence, wherein the first circuit is configured to output a voltage corresponding to the resistance values of the first resistor and the second resistor, wherein the second circuit is configured to generate a signal in accordance with the voltage output from the first circuit, and wherein the voltage generation circuit is configured to output a voltage for driving the LED in accordance with the signal. ### Claim 19 (depends on 18) The semiconductor device according to claim 18, wherein the second resistor is a thermistor, a resistance thermometer, or a thermocouple. ### Claim 20 (depends on 18) The semiconductor device according to claim 18, wherein the resistance material of the second resistor includes silicon. ### Claim 21 (depends on 18) The semiconductor device according to claim 18, wherein the first resistor is stacked over the second circuit. ### Claim 22 (depends on 18) The semiconductor device according to claim 18, wherein the metal oxide includes zinc. ### Claim 23 (depends on 18) The semiconductor device according to claim 18, wherein a first voltage is configured to be input to a second terminal of the first resistor, and wherein a second voltage which is lower than the first voltage is configured to be input to a second terminal of the second resistor. ### Claim 24 (depends on 18) A vehicle comprising: the semiconductor device according to claim 18; and a car body.