# US 10,500,908 B2 · Semiconductor device, method for manufacturing semiconductor device, tire, and moving object

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- Number: US 10,500,908 B2
- Document ID: US10500908B2
- Status: Granted
- Kind: B2
- Application number: 16/030,961
- Filed: 2018-07-10
- Published: 2018-11-15
- Granted: 2019-12-10
- Earliest claimed: 2015-05-11
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Tomoaki Atsumi; Masayuki Sakakura; Kazuaki Ohshima
- Web page: https://patentgrep.com/patent/US10500908B2

## CPC

- B60C 23/0452: {Antenna structure, control or arrangement (vehicle tyre mounted antennas H01Q1/2241)}
- B60C 23/009: {having wheels on a trailer}
- B60C 23/0428: {using passive wheel mounted resonance circuits}
- B60C 23/0454: {Means for changing operation mode, e.g. sleep mode, factory mode or energy save mode}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- B60C: VEHICLE TYRES; TYRE INFLATION; TYRE CHANGING; CONNECTING VALVES TO INFLATABLE ELASTIC BODIES IN GENERAL; DEVICES OR ARRANGEMENTS RELATED TO TYRES
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

To provide a circuit with low power consumption, a semiconductor device with low power consumption, a highly reliable semiconductor device, a tire whose performance is controlled, a moving object whose performance is controlled, or a moving object with a high degree of safety. A tire provided with a semiconductor device is provided. The semiconductor device includes a circuit portion, an antenna, and a sensor element. The circuit portion includes a transistor. The transistor includes an oxide semiconductor. The sensor element is configured to measure the air pressure of the tire.

## Claims

### Claim 1

A tire comprising a semiconductor device, the semiconductor device comprising:
a circuit portion comprising a transistor;
an antenna electrically connected to the circuit portion; and
a sensor element electrically connected to the circuit portion,
wherein the transistor comprises:
a first gate electrode;
a first insulating layer over the first gate electrode;
an oxide semiconductor layer over the first insulating layer;
a source electrode and a drain electrode over and in contact with the oxide semiconductor layer;
a second insulating layer over the source electrode and the drain electrode; and
a second gate electrode over the second insulating layer,
wherein the oxide semiconductor layer comprises indium and zinc, and
wherein the sensor element is configured to measure an air pressure of the tire.

### Claim 2 (depends on 1)

The tire according to claim 1,
wherein the semiconductor device is capable of wireless communication.

### Claim 3 (depends on 1)

The tire according to claim 1,
wherein the semiconductor device is positioned on a side surface of the tire.

### Claim 4

A semiconductor device comprising:
a circuit portion comprising a transistor;
an antenna electrically connected to the circuit portion; and
a sensor element electrically connected to the circuit portion,
wherein the semiconductor device is disposed in a sealed space,
wherein the sensor element is configured to measure an air pressure of a tire,
wherein the transistor comprises:
a first gate electrode;
a first insulating layer over the first gate electrode;
an oxide semiconductor layer over the first insulating layer;
a source electrode and a drain electrode over and in contact with the oxide semiconductor layer;
a second insulating layer over the source electrode and the drain electrode; and
a second gate electrode over the second insulating layer, and
wherein the oxide semiconductor layer comprises indium and zinc.

### Claim 5 (depends on 4)

A moving object comprising:
the semiconductor device according to claim 4; and
an interrogator,
wherein the semiconductor device is positioned inside the tire, and
wherein the interrogator is positioned outside the tire.

### Claim 6 (depends on 4)

A moving object comprising:
the semiconductor device according to claim 4; and
an interrogator,
wherein a distance between the semiconductor device and the interrogator is greater than or equal to 5 cm and less than or equal to 2 m.