# US 10,500,691 B2 · Substrate processing apparatus and substrate processing method > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,500,691 B2 - Document ID: US10500691B2 - Status: Granted - Kind: B2 - Application number: 15/688,281 - Filed: 2017-08-28 - Published: 2018-03-01 - Granted: 2019-12-10 - Earliest claimed: 2016-08-29 - Assignees: Ebara Corporation - Applicants: Ebara Corporation - Inventors: Masayoshi Imai; Katsuhiko Tokushige; Suguru Ogura; Katsuhide Watanabe; Junji Kunisawa; Takeshi Iizumi; Mitsuru Miyazaki - Web page: https://patentgrep.com/patent/US10500691B2 ## CPC - B24B 5/35: Accessories - B08B 3/024: {Cleaning by means of spray elements moving over the surface to be cleaned} - B08B 3/08: the liquid having chemical or dissolving effect - B08B 3/10: with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration - B24B 57/02: for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents - C01B 15/01: Hydrogen peroxide - C11D 3/3947: {Liquid compositions} - C11D 7/06: Hydroxides - C11D 7/08: Acids - C11D 7/34: containing sulfur - C11D 2111/44: Multi-step processes - B24B: MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth B23F, of screw-threads B23G1/36; by electro-erosion B23H; abrasive or related blasting B24C; tools for grinding, buffing or sharpening B24D; polishing compositions C09G1/00; abrasives C09K3/14; electrolytic etching or polishing C25F3/00; grinding arrangements for use on assembled railway tracks E01B31/17); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS - B08B: CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL - C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C} - C11D: DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL ## Abstract A substrate processing apparatus includes a polisher configured to polish a substrate using a polishing liquid, a first cleaner configured to clean the substrate polished by the polisher using sulfuric acid and hydrogen peroxide water, a second cleaner configured to clean the substrate cleaned by the first cleaner using a basic chemical liquid and hydrogen peroxide water, and a drier configured to dry the substrate cleaned by the second cleaner. ## Claims ### Claim 1 A substrate processing apparatus, the apparatus comprising: a first cleaner configured to clean, using sulfuric acid and hydrogen peroxide water, a substrate polished by a polisher; a second cleaner configured to clean, using a basic chemical liquid and hydrogen peroxide water, the substrate cleaned by the first cleaner; and a drier configured to dry the substrate cleaned by the second cleaner. ### Claim 2 (depends on 1) The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus does not have a mechanism configured to dry the substrate after being polished by the polisher and before being cleaned by the first cleaner. ### Claim 3 (depends on 1) The substrate processing apparatus according to claim 1, further comprising a transporter configured to transport the substrate polished by the polisher to the first cleaner without drying the substrate. ### Claim 4 (depends on 3) The substrate processing apparatus according to claim 3, further comprising a first liquid supply mechanism configured to shower liquid on the substrate that is being transported by the transporter. ### Claim 5 (depends on 1) The substrate processing apparatus according to claim 1, further comprising a substrate station on which the substrate after being polished by the polisher and before being cleaned by the first cleaner is mounted; and a second liquid supply mechanism configured to shower liquid on the substrate mounted on the substrate station. ### Claim 6 (depends on 1) The substrate processing apparatus according to claim 1, wherein the first cleaner is housed in a first housing provided with a first shutter that is openable and closable, the second cleaner is housed in a second housing provided with a second shutter that is openable and closable, and the drier is housed in a third housing provided with a third shutter that is openable and closable. ### Claim 7 (depends on 1) The substrate processing apparatus according to claim 1, further comprising a third cleaner configured to dean, using a basic chemical liquid and hydrogen peroxide water, the substrate polished by the polisher, wherein the first cleaner deans the substrate cleaned by the third cleaner. ### Claim 8 (depends on 7) The substrate processing apparatus according to claim 7, wherein the third cleaner cleans the substrate by bringing a cleaning member into contact with the substrate while supplying basic chemical liquid and hydrogen peroxide water to the substrate. ### Claim 9 (depends on 1) The substrate processing apparatus according to claim 1, wherein the second cleaner performs two-fluid jet cleaning after cleaning the substrate using the basic chemical liquid and the hydrogen peroxide water. ### Claim 10 (depends on 1) The substrate processing apparatus according to claim 1, wherein the polisher polishes the substrate using the polishing liquid including a cerium oxide. ### Claim 11 A substrate processing method, the method comprising: providing a substrate processing apparatus, the substrate processing apparatus comprising a polisher, first cleaner, a second cleaner and a dryer; polishing a substrate using a polishing liquid by the polisher in the substrate processing apparatus; after that, cleaning the substrate using sulfuric acid and hydrogen peroxide water by the first cleaner; after that, cleaning the substrate using a basic chemical liquid and hydrogen peroxide water by the second cleaner; and after that, drying the substrate by the drier. ### Claim 12 (depends on 11) The substrate processing method according to claim 11, further comprising transporting the polished substrate from the polisher to the first cleaner without drying the polished substrate, after polishing the substrate. ### Claim 13 A substrate processing method, the method comprising: in a first cleaning process, cleaning, using sulfuric acid and hydrogen peroxide water, a substrate to which cerium ions are attached; after that, in a second cleaning process, cleaning the substrate using a basic chemical liquid and hydrogen peroxide water; and after that, in a drying process, drying the substrate. ### Claim 14 (depends on 13) The substrate processing method according to claim 13, wherein in the first cleaning process, the substrate to which the cerium ions having a cerium concentration of 1.0×1010 atms/cm2 or more are attached is cleaned, and a cerium concentration of the substrate subjected to the drying process is a detection limit or less in measurement by an inductively coupled plasma mass spectrometry (ICP-MS) method. ### Claim 15 (depends on 13) The substrate processing method according to claim 13, wherein in the first cleaning process and/or the second cleaning process, the substrate is heated. ### Claim 16 (depends on 13) The substrate processing method according to claim 13, further comprising at least one of: supplying the basic chemical liquid and the hydrogen peroxide water to the substrate to which the cerium ions are attached; bringing a rotating sponge member into contact with the substrate to which the cerium ions are attached; and supplying a jet stream of a gas and a liquid to the substrate to which the cerium ions are attached, before the first cleaning process. ### Claim 17 (depends on 13) The substrate processing method according to claim 13, wherein the first cleaning process, the second cleaning process, and the drying process are performed in the cleaning tank, the method further comprising: cleaning an inner portion of a cleaning tank between the first cleaning process and the second cleaning process; and cleaning the inner portion of the cleaning tank between the second cleaning process and the drying process. ### Claim 18 (depends on 13) The substrate processing method according to claim 13, further comprising polishing the substrate using slurry including the cerium ions before the first cleaning process, wherein the substrate after being polished is not dried between the polishing process and the first cleaning process.