# US 10,500,614 B2 · Temperature controlled remote plasma clean for exhaust deposit removal

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- Number: US 10,500,614 B2
- Document ID: US10500614B2
- Status: Granted
- Kind: B2
- Application number: 15/479,609
- Filed: 2017-04-05
- Published: 2017-10-26
- Granted: 2019-12-10
- Earliest claimed: 2016-04-26
- Assignees: Applied Materials, Inc.
- Applicants: Applied Materials, Inc.
- Inventors: Martin A. Hilkene; David K. Carlson; Matthew D. Scotney-Castle
- Web page: https://patentgrep.com/patent/US10500614B2

## CPC

- B08B 7/0035: {by radiant energy, e.g. UV, laser, light beam or the like}
- C30B 25/14: Feed and outlet means for the gases; Modifying the flow of the reactive gases
- C30B 29/06: Silicon
- H01J 37/32357: {Generation remote from the workpiece, e.g. down-stream}
- H01J 37/32834: {Exhausting}
- H01J 37/32963: {End-point detection}
- H01J 2237/335: Cleaning
- B08B: CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

Embodiments of the present disclosure generally relate to a methods and apparatuses for cleaning exhaust systems, such as exhaust systems used with process chambers for the formation of epitaxial silicon. The exhaust system includes a remote plasma source for supplying ionized gas through the exhaust system, and one or more temperature sensors positioned downstream of the remote plasma source.

## Claims

### Claim 1

A processing system, comprising:
a process chamber in which substrates are processed; and
an exhaust system coupled to the process chamber, the exhaust system comprising:
a remote plasma source for supplying an ionized cleaning gas to the exhaust system downstream of the process chamber, wherein the remote plasma source comprises an input through which cleaning gas flows into the remote plasma source;
a first isolation valve downstream of the process chamber;
a second isolation valve downstream of the remote plasma source;
a pressure control valve downstream of the first isolation valve and the second isolation valve;
a first sensor configured to measure a temperature of the exhaust system downstream of the first isolation valve and the second isolation valve and upstream of the pressure control valve;
a second sensor configured to measure a temperature of the exhaust system downstream of the pressure control valve; and
a controller configured to receive temperature data from the first and second sensors and decrease a flow rate of ionized cleaning gas exiting the remote plasma source when a temperature in the exhaust system is determined by the controller to be above a predetermined limit.

### Claim 2 (depends on 1)

The processing system of claim 1 further comprising an endpoint detection system located downstream of the second sensor.

### Claim 3 (depends on 2)

The processing system of claim 2, further comprising a vacuum pump located downstream of the endpoint detection system.

### Claim 4 (depends on 1)

The processing system of claim 1, wherein the second sensor is coupled to a tee fitting in the exhaust system.

### Claim 5 (depends on 1)

The processing system of claim 1, wherein the controller is configured to control a flow rate of ionized cleaning gas exiting the remote plasma source such that:
flow of the ionized cleaning gas to the exhaust system is reduced when a measured temperature of the exhaust system is above a first temperature and below a second temperature; and
flow of the ionized cleaning gas to the exhaust system is stopped when a measured temperature of the exhaust system is above the second temperature.

### Claim 6

A processing system, comprising:
a process chamber in which substrates are processed; and
an exhaust system coupled to the process chamber, the exhaust system comprising:
a remote plasma source for supplying an ionized cleaning gas to the exhaust system downstream of the process chamber, wherein the remote plasma source comprises an input through which cleaning gas flows into the remote plasma source;
a first isolation valve downstream of the process chamber;
a second isolation valve downstream of the remote plasma source;
a pressure control valve downstream of the first isolation valve and the second isolation valve;
a first sensor configured to measure a temperature of the exhaust system downstream of the first isolation valve and the second isolation valve and upstream of the pressure control valve;
a second sensor configured to measure a temperature of the exhaust system downstream of the pressure control valve;
a controller configured to receive temperature data from the first and second sensors and decrease a flow rate of ionized cleaning gas exiting the remote plasma source when a temperature in the exhaust system is determined by the controller to be above a predetermined limit;
an endpoint detection system downstream of the pressure control valve; and
a vacuum pump downstream of the endpoint detection system.

### Claim 7 (depends on 6)

The processing system of claim 6, wherein the second sensor is upstream of the endpoint detection system.

### Claim 8 (depends on 7)

The processing system of claim 7, wherein the second sensor is coupled to a tee fitting in the exhaust system.

### Claim 9 (depends on 6)

The processing system of claim 6, wherein the controller is configured to control a flow rate of ionized cleaning gas exiting the remote plasma source such that:
flow of the ionized cleaning gas to the exhaust system is reduced when a measured temperature of the exhaust system is above a first temperature and below a second temperature; and
flow of the ionized cleaning gas to the exhaust system is stopped when a measured temperature of the exhaust system is above the second temperature.