Ceramic wafer and the manufacturing method thereof
AssigneeHong Chuang Applied Technology Co., Ltd.
InventorsRuey-Hsia Chiang, Yan-Kai Zeng
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Abstract
A method of producing ceramic wafer includes a forming step and processing step. The processing step includes forming positioning notch or positioning, flat edge and edge profile, which avoids the ceramic wafers to have processing defect during cutting, grinding, and polishing, for increasing yield. The ceramic particles for producing ceramic wafer include nitride ceramic powder, oxide ceramic powder, and nitride ceramic powder. The ceramic wafer has low dielectric constant, insulation, and excellent heat dissipation, which can be applied for the need of semiconductor process, producing electric product and semiconductor equipment.
Claims8
A method of manufacturing a ceramic wafer, comprising the steps of:
- (a) molding step:
- performing pressurized molding on a ceramic granule mechanically or hydraulically in a die operating under a pressure of −0.063 to 100 atm or in presence of a pressurizing gas, followed by performing isostatic pressing with isotropic hydraulic pressure or pneumatic pressure to produce a ceramic green compact;
- (b) temperature-controlling step:
- debinding the ceramic green compact, followed by sintering the debinded ceramic green compact undera pressure of −0.063 to 6000 atm, so as to form a ceramic bulk;
- (c) grinding step:
- performing outer diameter grinding on the ceramic bulk to form a precision ceramic bulk;
- and
- (d) processing step:
- forming a locating notch or a locating flat on the precision ceramic bulk, performing multi-wire cutting on the precision ceramic bulk to form wafer slices, grinding flat surfaces and peripheral lead angles of the wafer slices, and polishing the wafer slices to form the ceramic wafers;
- wherein the debinding in step (b) is performed in an environment of hydrogen, nitrogen, oxygen, argon or air.
Dependencies are inferred from the claim text.