Method of controlling the slew rate of a MOSFET and apparatus thereof
AssigneeGM Global Technology Operations LLC
InventorSimone Alpe
Life of this patent
Estimating the term…
Abstract
A method of controlling a slew rate of a MOSFET connected to a battery for supplying an electrical current to an electrical load is provided. A state transition of the MOSFET is provided and a drain-source voltage of the MOSFET is monitored. A variable current is provided through a gate of the MOSFET. A constant current is provided through the gate of the MOSFET, when the drain-source voltage of the MOSFET satisfies a predefined condition that is a function of a battery voltage.
Claims20
A method of controlling a slew rate of a MOSFET connected to a battery for supplying an electrical current to an electrical load, the method comprising:
- determining a state transition of the MOSFET;
- monitoring a drain-source voltage of the MOSFET;
- applying a variable current through a gate of the MOSFET;
- and
- applying a constant current through the gate of the MOSFET once the drain-source voltage of the MOSFET satisfies a predefined condition that is a function of a battery voltage of the battery.
An apparatus for controlling a slew rate of a MOSFET connected to a battery for supplying an electrical current to an electrical load, the apparatus comprising:
- a sensor circuit configured to sense a state transition of the MOSFET;
- a monitoring circuit configured to monitor a drain-source voltage of the MOSFET;
- a pre-driver circuit configured to provide a variable current through a gate of the MOSFET and, once the drain-source voltage of the MOSFET satisfies a predefined condition, provide a constant current through the gate of the MOSFET, the predefined condition being that is a function of a battery voltage of the battery.
An apparatus for controlling a slew rate of a MOSFET connected to a battery for supplying an electrical current to an electrical load, the apparatus comprising:
- a sensor circuit configured to sense a state transition of the MOSFET;
- a monitoring circuit configured to monitor a drain-source voltage of the MOSFET;
- a pre-driver circuit that comprises a first current generator, a first switch, a second current generator, and a second switch, the first switch and the second switch being switchable, respectively, between an open position and a closed position;
- the first current generator arranged between a feeding node and a first intermediate node, and the first switch, in the closed position, configured to bypass the first current generator;
- the second current generator arranged between a second intermediate node and a ground node, and the second switch, in the closed position, configured to bypass the second current generator,
- the pre-driver circuit configured to, in a first time period, provide a variable current through a gate of the MOSFET with one of the first switch and the second switch in the closed position, the drain-source voltage monitored by the monitoring circuit failing to satisfy a predefined condition that is a function of a battery voltage of the battery during the first time period;
- and
- the pre-driver circuit configured to, in a second time period that is subsequent the first time period, provide a constant current through the gate with the one of the first switch and the second switch in the open position, the drain-source voltage monitored by the monitoring circuit satisfying the predefined condition during the second time period.
Dependencies are inferred from the claim text.