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US 10,491,192 B1Granted
Transversely-excited film bulk acoustic resonator
AssigneeResonant Inc.
InventorsViktor Plesski, Soumya Yandrapalli, Robert B. Hammond, Bryant Garcia, Patrick Turner, Jesson John, Ventsislav Yantchev
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Abstract
Acoustic resonator devices and filters are disclosed. An acoustic resonator includes a substrate and a piezoelectric plate having parallel front and back surfaces, the back surface attached to the substrate. An interdigital transducer (IDT) is formed on the front surface of the piezoelectric plate such that interleaved fingers of the IDT are disposed on a portion of the piezoelectric plate suspended over a cavity formed in the substrate.
Claims36
A filter device, comprising:
- a substrate;
- a piezoelectric plate having parallel front and back surfaces, the back surface attached to the substrate;
- and
- a conductor pattern formed on the front surface, the conductor pattern including a plurality of interdigital transducers (IDTs) of a respective plurality of resonators, wherein
- interleaved fingers of each of the plurality of IDTs are disposed on respective portions of the piezoelectric plate suspended over one or more cavities formed in the substrate,
- the plurality of resonators includes a shunt resonator and a series resonator,
- a first thickness of a first dielectric layer deposited between the fingers of the IDT of the shunt resonator is greater than a second thickness of a second dielectric layer deposited between the fingers of the IDT of the series resonator,
- a resonance frequency of the shunt resonator is set, at least in part, by the first thickness,
- a resonance frequency of the series resonator is set, at least in part, by the second thickness, and
- a difference between the first thickness and the second thickness is sufficient to set the resonance frequency of the shunt resonator at least 140 MHz lower than the resonance frequency of the series resonator.
7 more elements
A filter device, comprising:
- a substrate;
- a piezoelectric plate having parallel front and back surfaces, the back surface attached to the substrate;
- a conductor pattern formed on the front surface, the conductor pattern including a plurality of interdigital transducers (IDTs) of a respective plurality of resonators including a shunt resonator and a series resonator;
- a first dielectric layer having a first thickness deposited over the IDT of the shunt resonator;
- and
- a second dielectric layer having a second thickness deposited over the IDT of the series resonator, wherein
- interleaved fingers of each of the plurality of IDTs are disposed on respective portions of the piezoelectric plate suspended over one or more cavities formed in the substrate,
- a resonance frequency of the shunt resonator is set, at least in part, by the first thickness,
- a resonance frequency of the series resonator is set, at least in part, by the second thickness, and
- a difference between the first thickness and the second thickness is sufficient to set the resonance frequency of the shunt resonator at least 140 MHz lower than the resonance frequency of the series resonator.
7 more elements
A filter device, comprising:
- a substrate;
- a piezoelectric plate having parallel front and back surfaces, the back surface attached to the substrate;
- and
- a conductor pattern formed on the front surface, the conductor pattern including a plurality of interdigital transducers (IDTs) of a respective plurality of resonators, wherein
- interleaved fingers of each of the plurality of IDTs are disposed on respective portions of the piezoelectric plate suspended over one or more cavities formed in the substrate,
- the plurality of resonators includes a shunt resonator and a series resonator, and
- a first thickness of a first dielectric layer deposited between the fingers of the IDT of the shunt resonator is greater than a second thickness of a second dielectric layer deposited between the fingers of the IDT of the series resonator,
- the first and second dielectric layers are SiO2, and
- a difference between the first thickness and the second thickness is greater than or equal to 30 nm.
6 more elements
A filter device, comprising:
- a substrate;
- a piezoelectric plate having parallel front and back surfaces, the back surface attached to the substrate;
- a conductor pattern formed on the front surface, the conductor pattern including a plurality of interdigital transducers (IDTs) of a respective plurality of resonators including a shunt resonator and a series resonator;
- a first dielectric layer having a first thickness deposited over the IDT of the shunt resonator;
- and
- a second dielectric layer having a second thickness less than the first thickness deposited over the IDT of the series resonator, wherein
- interleaved fingers of each of the plurality of IDTs are disposed on respective portions of the piezoelectric plate suspended over one or more cavities formed in the substrate,
- the first and second dielectric layers are at least one of SiO2 and Si3N4, and
- a difference between the first thickness and the second thickness is greater than or equal to 30 nm.
6 more elements
Dependencies are inferred from the claim text.