Manufacturing method of monocrystalline silicon and monocrystalline silicon

A manufacturing method of a monocrystalline silicon using a monocrystal pull-up apparatus comprising:

• a crucible configured to receive a silicon material;
• a crucible driver configured to vertically move and rotate the crucible;
• a heater configured to heat the crucible to melt the silicon material;
• a pull-up portion configured to pull up a seed crystal after bringing the seed crystal into contact with a silicon melt in the crucible to grow the monocrystalline silicon;
• a hollow cylindrical heat shield disposed above the crucible and configured to surround the monocrystalline silicon;
• and
• a chamber configured to house the crucible, the heater and the heat shield, the method comprising:
• a growth step in which the seed crystal having contacted the silicon melt is pulled up and the crucible is rotated and raised to form a straight body of the monocrystalline silicon;
• a separating step in which the monocrystalline silicon is separated from the silicon melt;
• a state holding step in which the crucible and the monocrystalline silicon are lowered and the monocrystalline silicon is kept located below a level at which the monocrystalline silicon is separated from the silicon melt for a predetermined time;
• and
• a draw-out step in which the monocrystalline silicon is drawn out of the chamber.