# US 10,484,632 B2 · Imaging element and imaging device

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- Number: US 10,484,632 B2
- Document ID: US10484632B2
- Status: Granted
- Kind: B2
- Application number: 16/363,549
- Filed: 2019-03-25
- Published: 2019-07-18
- Granted: 2019-11-19
- Earliest claimed: 2016-09-27
- Assignees: FUJIFILM Corporation
- Applicants: FUJIFILM Corporation
- Inventors: Makoto Kobayashi
- Web page: https://patentgrep.com/patent/US10484632B2

## CPC

- H04N 25/704: Pixels specially adapted for focusing, e.g. phase difference pixel sets
- G02B 7/34: using different areas in a pupil plane
- G03B 13/36: Autofocus systems
- H04N 25/70: SSIS architectures; Circuits associated therewith
- H04N 25/76: Addressed sensors, e.g. MOS or CMOS sensors
- H04N 25/77: Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
- H04N 25/78: Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters
- H10F 39/12: Image sensors
- H10F 39/802: {Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes}
- H10F 39/8027: {Geometry of the photosensitive area}
- H10F 39/80377: {characterised by the channel of the transistor, e.g. channel having a doping gradient}
- H10F 39/8057: {Optical shielding}
- H10F 39/8063: {Microlenses}
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION
- G02B: OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G03B: APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR (optical parts of such apparatus G02B; photosensitive materials or processes for photographic purposes G03C; apparatus for processing exposed photographic materials G03D)
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

An imaging element that images a subject through an imaging optical system, and includes a plurality of pairs each including a photoelectric conversion unit which is formed within a semiconductor substrate, receives one of a pair of luminous flux passed through different portions arranged in one direction of a pupil area of the imaging optical system, and accumulates electric charges corresponding to a light reception amount, and a photoelectric conversion unit which is formed within the semiconductor substrate, receives the other one of the pair of luminous flux, and accumulates electric charges corresponding to a light reception amount, each of pixels including the photoelectric conversion units constituting the pair includes an electric charge retaining unit as defined herein, and when being viewed in a direction perpendicular to the semiconductor substrate, the electric charge retaining unit included in the pixel is disposed in an area as defined herein.

## Claims

### Claim 1

An imaging element that images a subject through an imaging optical system, the imaging element comprising: a plurality of pairs provided within a semiconductor substrate, each of the pairs comprising a first pixel comprising a photoelectric conversion unit which receives one of a pair of luminous flux passed through different portions arranged in one direction of a pupil area of the imaging optical system, and accumulates electric charges corresponding to a light reception amount, and a second pixel comprising a photoelectric conversion unit which receives other of the pair of luminous flux, and accumulates electric charges corresponding to a light reception amount, wherein each of the first pixel and the second pixel comprises: an electric charge retaining unit which retains the electric charges transferred from the photoelectric conversion unit in the each of the first pixel and the second pixel and from which a signal corresponding to the electric charges is read out by a read-out circuit; a transfer channel which is provided within the semiconductor substrate and is to transfer the electric charges accumulated in the photoelectric conversion unit to the electric charge retaining unit; a transfer electrode provided above the transfer channel; and a light shielding film that shields an area, excluding a light receiving area, of the photoelectric conversion unit, the electric charge retaining unit, and the transfer electrode, in a state of being viewed in a one direction perpendicular to the semiconductor substrate, the photoelectric conversion unit and the electric charge retaining unit included in each of the first pixel and the second pixel are arranged perpendicular to the one direction of the pupil area, and in a state of being viewed in the one direction perpendicular to the semiconductor substrate, the transfer channel is provided in an area excluding an area of the first pixel and the second pixel indicated by a trajectory in a case where the light receiving area of the photoelectric conversion unit is moved perpendicular to the one direction of the pupil area.

### Claim 2 (depends on 1)

The imaging element according to claim 1, wherein each of the first pixel and the second pixel has a lens disposed above the photoelectric conversion unit to concentrate light to the light receiving area of the photoelectric conversion unit, and a width of the lens in the one direction of the pupil area is greater than a width of the lens in the direction perpendicular to the one direction of the pupil area.

### Claim 3 (depends on 1)

An imaging device comprising:
the imaging element according to claim 1.

### Claim 4 (depends on 2)

An imaging device comprising:
the imaging element according to claim 2.