# US 10,484,590 B2 · Integrated circuit device

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- Number: US 10,484,590 B2
- Document ID: US10484590B2
- Status: Granted
- Kind: B2
- Application number: 15/060,604
- Filed: 2016-03-04
- Published: 2017-09-07
- Granted: 2019-11-19
- Earliest claimed: 2016-03-04
- Assignees: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicants: Taiwan Semiconductor Manufacturing Co., Ltd.
- Inventors: Zen-Fong Huang; Volume Chien
- Web page: https://patentgrep.com/patent/US10484590B2

## CPC

- H04N 23/672: {based on the phase difference signals}
- H04N 23/55: Optical parts specially adapted for electronic image sensors; Mounting thereof
- H10F 39/182: {Colour image sensors}
- H10F 39/8053: {Colour filters}
- H10F 39/8063: {Microlenses}
- H10F 39/807: {Pixel isolation structures}
- H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

Integrated circuit devices are disclosed. The integrated circuit device includes a focus detection pixel and a lens. The focus detection pixel includes a photosensitive unit and a photo-insensitive unit in a substrate. The lens is disposed over the focus detection pixel, wherein the photosensitive unit and the photo-insensitive unit are disposed opposite to each other with respect to an optical axis of the lens, and a light beam passing through the lens is simultaneously incident into the photosensitive unit and the photo-insensitive unit.

## Claims

### Claim 1

An integrated circuit device, comprising:
a focus detection pixel, comprising a photosensitive unit and a photo-insensitive unit in a substrate; and
a lens having a single radius of curvature and an optical axis passing through a surface of the curvature at the center of the lens, disposed over the focus detection pixel and fully covering the photosensitive unit and the photo-insensitive unit, wherein the photosensitive unit is disposed at a first side of the optical axis and the photo-insensitive unit is disposed at a second side opposite to the first side of the optical axis, wherein a top surface connecting to a sidewall of the photosensitive unit is flush with a top surface connecting to a sidewall of the photo-insensitive unit, and the sidewalls of the photosensitive unit disposed at the first side and the photo-insensitive unit disposed at the second side are in contact at the optical axis, and
wherein a light beam passing through the lens is simultaneously incident into the photosensitive unit and the photo-insensitive unit.

### Claim 2 (depends on 1)

The integrated circuit device according to claim 1, wherein a size of the photosensitive unit is about equal to a size of the photo-insensitive unit.

### Claim 3 (depends on 1)

The integrated circuit device according to claim 1, further comprising a plurality of isolation structures in the substrate, wherein the photosensitive unit and the photo-insensitive unit are respectively disposed between the isolation structures.

### Claim 4 (depends on 1)

The integrated circuit device according to claim 1, wherein the photo-insensitive unit is an insulating feature.

### Claim 5 (depends on 1)

The integrated circuit device according to claim 1, wherein the photo-insensitive unit is a doped region having the same conductivity type as the substrate.

### Claim 6 (depends on 1)

The integrated circuit device according to claim 1, wherein the photo-insensitive unit is a portion of the substrate without additional doping.

### Claim 7 (depends on 1)

The integrated circuit device according to claim 1, further includes a color filter disposed between the focus detection pixel and the lens.

### Claim 8

An integrated circuit device, comprising:
a plurality of image sensing pixels;
a focus detection pixel pair, disposed among the image sensing pixels and comprising a first focus detection pixel and a second focus detection pixel which are horizontally disposed, wherein the first focus detection pixel comprises a first photosensitive unit and a first photo-insensitive unit, and the second focus detection pixel comprises a second photosensitive unit and a second photo-insensitive unit; and
a first lens over the image sensing pixels, a second lens over the first focus detection pixel and a third lens over the second focus detection pixel,
wherein the second lens has a single radius of curvature and an optical axis passing through a surface of the curvature at the center of the second lens and fully covers the first photosensitive unit and the first photo-insensitive unit, wherein the first photosensitive unit is disposed at a first side of the optical axis of the second lens, and the first photo-insensitive unit is disposed at a second side of the optical axis of the second lens that is opposite to the first side, wherein a top surface connecting to a sidewall of the first photosensitive unit is flush with a top surface connecting to a sidewall of the first photo-insensitive unit, and the sidewalls of the first photosensitive unit disposed at the first side and the first photo-insensitive unit disposed at the second side are in contact at the optical axis,
wherein a light beam passing through the second lens over the first focus detection pixel is simultaneously incident into the first photosensitive and photo-insensitive units, and a light beam passing through the second lens over the second focus detection pixel is simultaneously incident into the second photosensitive and photo-insensitive units.

### Claim 9 (depends on 8)

The integrated circuit device according to claim 8, wherein at least one of a size of the first photosensitive unit, the first photo-insensitive unit, the second photosensitive unit, and the second photo-insensitive unit is about equal to a size of the image sensing pixel.

### Claim 10 (depends on 8)

The integrated circuit device according to claim 8, wherein a size of at least one of the second and third lenses is about equal to a size of the first lens.

### Claim 11 (depends on 8)

The integrated circuit device according to claim 8, wherein a size of at least one of the second and third lenses is larger than a size of the first lens.

### Claim 12 (depends on 8)

The integrated circuit device according to claim 8, wherein a size of the first photosensitive unit is about equal to a size of the first photo-insensitive unit.

### Claim 13 (depends on 8)

The integrated circuit device according to claim 8, wherein a size of the second photosensitive unit is about equal to a size of the second photo-insensitive unit.

### Claim 14 (depends on 8)

The integrated circuit device according to claim 8, wherein one of the first side and the second side is a right side, and the other of the first side and the second side is a left side.

### Claim 15 (depends on 8)

The integrated circuit device according to claim 8, further includes color filters disposed between the image sensing pixels and the first lens, the first focus detection pixel and the second lens, and the second focus detection pixel and the third lens.

### Claim 16

An integrated circuit device, comprising:
a plurality of image sensing pixels;
a focus detection pixel pair, comprising a first focus detection pixel and a second focus detection pixel, wherein the first focus detection pixel comprises a first photosensitive unit and a first photo-insensitive unit, and the second focus detection pixel comprises a second photosensitive unit and a second photo-insensitive unit; and
a first lens over the image sensing pixels, a second lens over the first focus detection pixel and a third lens over the second focus detection pixel, wherein a size of the second lens over the first focus detection pixel and a size of the third lens over the second focus detection pixel are respectively larger than a size of the first lens over the image sensing pixel,
wherein the second lens has a single radius of curvature and an optical axis passing through a surface of the curvature at the center of the second lens and fully covers the first photosensitive unit and the first photo-insensitive unit, wherein the first photosensitive unit is disposed at a first side of the second lens with respect to the optical axis, and the first photo-insensitive unit is disposed at the second side of the second lens opposite to the first side, wherein a top surface connecting to a sidewall of the first photosensitive unit is flush with a top surface connecting to a sidewall of the first photo-insensitive unit, and the sidewalls of the first photosensitive unit disposed at the first side and the first photo-insensitive unit disposed at the second side are in contact at the optical axis.

### Claim 17 (depends on 16)

The integrated circuit device according to claim 16, wherein a size of the second lens over the first focus detection pixel and a size of the third lens over the second focus detection pixel are respectively about two times a size of the first lens over the image sensing pixel.

### Claim 18 (depends on 16)

The integrated circuit device according to claim 16, wherein a size of each of the first photosensitive unit, the first photo-insensitive unit, the second photosensitive unit, and the second photo-insensitive unit is about equal to a size of the image sensing pixel.

### Claim 19 (depends on 16)

The integrated circuit device according to claim 16, wherein a light beam passing through the second lens over the first focus detection pixel is simultaneously incident into the first photosensitive and photo-insensitive units, and a light beam passing through the third lens over the second focus detection pixel is simultaneously incident into the second photosensitive and photo-insensitive units.

### Claim 20 (depends on 1)

The integrated circuit device according to claim 1, wherein the sidewalls of the photosensitive unit disposed at the first side and photo-insensitive unit disposed at the second side are overlapped with the optical axis of the lens.

### Claim 21 (depends on 1)

The integrated circuit device according to claim 1, wherein the optical axis of the lens passes a substrate, an isolation structure in the substrate and a conductive feature on the substrate.
