# US 10,483,965 B1 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,483,965 B1 - Document ID: US10483965B1 - Status: Granted - Kind: B1 - Application number: 16/234,328 - Filed: 2018-12-27 - Published: 2019-12-05 - Granted: 2019-11-19 - Earliest claimed: 2018-05-30 - Assignees: Mitsubishi Electric Corporation - Applicants: Mitsubishi Electric Corporation - Inventors: Yuji Miyazaki - Web page: https://patentgrep.com/patent/US10483965B1 ## CPC - H03K 17/567: Circuits characterised by the use of more than one type of semiconductor device, e.g. BIMOS, composite devices such as IGBT - H10W 44/00: Electrical arrangements for controlling or matching impedance - H03K 17/122: {in field-effect transistor switches} - H03K 17/64: having inductive loads - H10W 70/611: {for connecting multiple chips together} - H10W 70/635: {Through-vias} - H10W 70/65: Shapes or dispositions of interconnections - H03K: PULSE TECHNIQUE (measuring pulse characteristics G01R; modulating sinusoidal oscillations with pulses H03C; transmission of digital information H04L; discriminator circuits detecting phase difference between two signals by counting or integrating cycles of oscillation H03D3/04; automatic control, starting, synchronisation or stabilisation of generators of electronic oscillations or pulses where the type of generator is irrelevant or unspecified H03L; coding, decoding or code conversion, in general H03M) - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract Examples of a semiconductor device includes a first switching element including a first gate, a first source connected to a common terminal via a first connection line, and a first drain, a second switching element including a second gate, a second source that is connected to the first source via a second connection line and connected to the common terminal via the first connection line and the second connection line, a first capacitor for connecting the first source and a high voltage side of a power supply, a first circuit element having first end connected between the high voltage side of the power supply and the first capacitor, and a second capacitor for connecting the second source and second end of the first circuit element. ## Claims ### Claim 1 A semiconductor device comprising: a first switching element including a first gate, a first source connected to a common terminal via a first connection line, and a first drain; a second switching element including a second gate, a second source that is connected to the first source via a second connection line and connected to the common terminal via the first connection line and the second connection line; a first capacitor for connecting the first source and a high voltage side of a power supply; a first circuit element having first end connected between the high voltage side of the power supply and the first capacitor; and a second capacitor for connecting the second source and second end of the first circuit element. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, wherein a voltage is applied from the power supply to the first gate and the second gate, a capacitance of the first capacitor is equal to or larger than a capacitance between the first gate and the first source, and a capacitance of the second capacitor is equal to or larger than a capacitance between the second gate and the second source. ### Claim 3 (depends on 1) The semiconductor device according to claim 1, further comprising a first detection circuit for causing current to flow from a positive electrode of the second capacitor to the second gate when a voltage across the first circuit element reaches a predetermined voltage. ### Claim 4 (depends on 1) The semiconductor device according to claim 1, further comprising: a third capacitor for connecting the first source and a low voltage side of the power supply; a second circuit element having first end connected between the low voltage side of the power supply and the third capacitor; and a fourth capacitor for connecting the second source and second end of the second circuit element. ### Claim 5 (depends on 4) The semiconductor device according to claim 4, further comprising a second detection circuit for causing current to flow from a positive electrode of the fourth capacitor to the second gate when a voltage across the second circuit element reaches a predetermined voltage. ### Claim 6 (depends on 1) The semiconductor device according to claim 1, wherein at least one of the first switching element and the second switching element has a plurality of island-shaped chips. ### Claim 7 (depends on 1) The semiconductor device according to claim 1, wherein at least one of the first switching element and the second switching element is a module having a plurality of chips. ### Claim 8 (depends on 1) The semiconductor device according to claim 1, wherein the first circuit element is a resistance element. ### Claim 9 (depends on 8) The semiconductor device according to claim 8, wherein a product of a capacitance of the second capacitor and a resistance value of the resistance element is not less than a current transition time of the second switching element. ### Claim 10 (depends on 4) The semiconductor device according to claim 4, wherein the first circuit element and the second circuit element are inductance elements. ### Claim 11 (depends on 10) The semiconductor device according to claim 10, wherein an inductance of the inductance element is not less than 10 times an inductance occurring between the first source and the second source. ### Claim 12 (depends on 10) The semiconductor device according to claim 10, wherein when a capacitance of the first capacitor is set to C, a capacitance of the second capacitor is set to C, an inductance of the inductance element is set to La, and a current transition time of the second switching element is set to tr, 2π√(La×C)