# US 10,483,928 B2 · Power amplification module > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,483,928 B2 - Document ID: US10483928B2 - Status: Granted - Kind: B2 - Application number: 15/926,165 - Filed: 2018-03-20 - Published: 2018-07-26 - Granted: 2019-11-19 - Earliest claimed: 2015-12-02 - Assignees: Murata Manufacturing Co., Ltd. - Applicants: Murata Manufacturing Co., Ltd. - Inventors: Yasushi Oyama; Takayuki Tsutsui; Kazuhito Nakai - Web page: https://patentgrep.com/patent/US10483928B2 ## CPC - H03G 1/0094: {using switched capacitors} - H03F 1/56: Modifications of input or output impedances, not otherwise provided for - H03F 3/19: with semiconductor devices only - H03F 3/213: in integrated circuits - H03F 3/245: {with semiconductor devices only} - H03F 3/72: Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal - H03F 2200/111: the amplifier being a dual or triple band amplifier, e.g. 900 and 1800 MHz, e.g. switched or not switched, simultaneously or not - H03F 2200/165: A filter circuit coupled to the input of an amplifier - H03F 2200/222: A circuit being added at the input of an amplifier to adapt the input impedance of the amplifier - H03F 2200/318: A matching circuit being used as coupling element between two amplifying stages - H03F 2200/387: A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier - H03F 2203/7209: the gated amplifier being switched from a first band to a second band - H03G 2201/106: being attenuating element - H03G 2201/40: Combined gain and bias control - H03G: CONTROL OF AMPLIFICATION - H03F: AMPLIFIERS ## Abstract A power amplification module includes a first input terminal that receives a first transmit signal in a first frequency band, a second input terminal that receives a second transmit signal in a second frequency band having a narrower transmit/receive frequency interval than the first frequency band, a first amplification circuit that receives and amplifies the first transmit signal to produce a first amplified signal and outputs the first amplified signal, a second amplification circuit that receives and amplifies the second transmit signal to produce a second amplified signal and outputs the second amplified signal, a third amplification circuit that receives and amplifies the first or second amplified signal to produce an output signal and outputs the output signal, and an attenuation circuit located between the second input terminal and the second amplification circuit and configured to attenuate a receive frequency band component of the second frequency band. ## Claims ### Claim 1 A power amplification module comprising: a first input terminal receiving a first transmit signal in a first frequency band; a second input terminal receiving a second transmit signal in a second frequency band having a narrower transmit/receive frequency interval than the first frequency band; a first amplification circuit receiving and amplifying the first transmit signal to produce a first amplified signal and outputting the first amplified signal; a second amplification circuit receiving and amplifying the second transmit signal to produce a second amplified signal and outputting the second amplified signal; and an attenuation circuit located between the second input terminal and the second amplification circuit and configured to attenuate a component of the second frequency band, wherein no attenuation circuit is located between the first input terminal and the first amplification circuit, wherein: the first and second frequency bands are between 699 MHz and 915 MHz. ### Claim 2 (depends on 1) The power amplification module according to claim 1, wherein the attenuation circuit operates to match an output impedance of a circuit located upstream of the second amplification circuit to an input impedance of the second amplification circuit. ### Claim 3 (depends on 1) The power amplification module according to claim 1, wherein the attenuation circuit comprises a bandpass filter attenuating the receive frequency band component of the second frequency band. ### Claim 4 (depends on 3) The power amplification module according to claim 3, wherein the bandpass filter comprises a surface acoustic wave filter. ### Claim 5 (depends on 1) The power amplification module according to claim 1, wherein the first amplification circuit comprises a transistor and the second amplification circuit comprises a transistor, and wherein the transistor of the second amplification circuit has a larger emitter area than the transistor of the first amplification circuit. ### Claim 6 (depends on 1) The power amplification module according to claim 1, further comprising: a fourth amplification circuit amplifying a third transmit signal conforming to a communication standard different from a communication standard to which the first transmit signal conforms; and a switch element outputting the first transmit signal or the third transmit signal inputted from the first input terminal to a corresponding one of the first amplification circuit and the fourth amplification circuit. ### Claim 7 (depends on 6) The power amplification module according to claim 6, wherein the switch element electrically disconnects the first input terminal and the first amplification circuit in a case where the second transmit signal is inputted to the second input terminal. ### Claim 8 (depends on 2) The power amplification module according to claim 2, wherein the attenuation circuit comprises a bandpass filter attenuating the receive frequency band component of the second frequency band. ### Claim 9 (depends on 2) The power amplification module according to claim 2, wherein the first amplification circuit comprises a transistor and the second amplification circuit comprises a transistor, and wherein the transistor of the second amplification circuit has a larger emitter area than the transistor of the first amplification circuit. ### Claim 10 (depends on 3) The power amplification module according to claim 3, wherein the first amplification circuit comprises a transistor and the second amplification circuit comprises a transistor, and wherein the transistor of the second amplification circuit has a larger emitter area than the transistor of the first amplification circuit. ### Claim 11 (depends on 4) The power amplification module according to claim 4, wherein the first amplification circuit comprises a transistor and the second amplification circuit comprises a transistor, and wherein the transistor of the second amplification circuit has a larger emitter area than the transistor of the first amplification circuit. ### Claim 12 (depends on 2) The power amplification module according to claim 2, further comprising: a fourth amplification circuit amplifying a third transmit signal conforming to a communication standard different from a communication standard to which the first transmit signal conforms; and a switch element outputting the first transmit signal or the third transmit signal inputted from the first input terminal to a corresponding one of the first amplification circuit and the fourth amplification circuit. ### Claim 13 (depends on 3) The power amplification module according to claim 3, further comprising: a fourth amplification circuit amplifying a third transmit signal conforming to a communication standard different from a communication standard to which the first transmit signal conforms; and a switch element outputting the first transmit signal or the third transmit signal inputted from the first input terminal to a corresponding one of the first amplification circuit and the fourth amplification circuit. ### Claim 14 (depends on 4) The power amplification module according to claim 4, further comprising: a fourth amplification circuit amplifying a third transmit signal conforming to a communication standard different from a communication standard to which the first transmit signal conforms; and a switch element outputting the first transmit signal or the third transmit signal inputted from the first input terminal to a corresponding one of the first amplification circuit and the fourth amplification circuit. ### Claim 15 (depends on 5) The power amplification module according to claim 5, further comprising: a fourth amplification circuit amplifying a third transmit signal conforming to a communication standard different from a communication standard to which the first transmit signal conforms; and a switch element outputting the first transmit signal or the third transmit signal inputted from the first input terminal to a corresponding one of the first amplification circuit and the fourth amplification circuit. ### Claim 16 (depends on 1) The power amplification module according to claim 1, wherein the attenuation circuit and the first amplification circuit are fabricated in a monolithic microwave integrated circuit. ### Claim 17 (depends on 2) The power amplification module according to claim 2, wherein the attenuation circuit and the first amplification circuit are fabricated in a monolithic microwave integrated circuit. ### Claim 18 (depends on 3) The power amplification module according to claim 3, wherein the attenuation circuit and the first amplification circuit are fabricated in a monolithic microwave integrated circuit. ### Claim 19 (depends on 1) The power amplification module according to claim 1, wherein the attenuation circuit is mounted in the module. ### Claim 20 (depends on 2) The power amplification module according to claim 2, wherein the attenuation circuit is mounted in the module.