# US 10,483,839 B2 · Semiconductor device, power conversion device, driving device, vehicle, and elevator

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- Number: US 10,483,839 B2
- Document ID: US10483839B2
- Status: Granted
- Kind: B2
- Application number: 15/896,563
- Filed: 2018-02-14
- Published: 2019-05-09
- Granted: 2019-11-19
- Earliest claimed: 2017-11-07
- Assignees: Kabushiki Kaisha Toshiba
- Applicants: Kabushiki Kaisha Toshiba
- Inventors: Kentaro Ikeda
- Web page: https://patentgrep.com/patent/US10483839B2

## CPC

- H02M 1/32: Means for protecting converters other than automatic disconnection
- G01R 19/00: Arrangements for measuring currents or voltages or for indicating presence or sign thereof (G01R5/00 takes precedence; for measuring bioelectric currents or voltages A61B5/24)
- G01R 31/3277: {of low voltage devices, e.g. domestic or industrial devices, such as motor protections, relays, rotation switches}
- H02M 1/34: Snubber circuits
- H02M 7/537: using semiconductor devices only, e.g. single switched pulse inverters
- G01R 19/04: Measuring peak values {or amplitude or envelope} of AC or of pulses
- G01R 31/42: AC power supplies
- H02M 1/322: {Means for rapidly discharging a capacitor of the converter for protecting electrical components or for preventing electrical shock}
- H02M 1/346: {Passive non-dissipative snubbers}
- H02M: APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF (transformers H01F; dynamo-electric converters H02K47/00; controlling transformers, reactors or choke coils, control or regulation of electric motors, generators or dynamo-electric converters H02P)
- G01R: MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES (indicating correct tuning of resonant circuits H03J3/12)

## Abstract

A semiconductor device according to an embodiment includes: a first capacitor having a first end and a first the other end, the first end for electrically connecting to at least one of a first electrode and a second electrode of a transistor having the first electrode, the second electrode, and a gate electrode; a first diode having a first anode and a first cathode, the first anode electrically connected to the first the other end; a second capacitor having a second end and a second the other end, the second end electrically connected to the first cathode; a sample and hold circuit electrically connected to the first cathode and the second end; a switch electrically connected in parallel with the second capacitor between the second end and the second the other end; and a second diode having a second anode and a second cathode, the second cathode electrically connected to the first the other end and the first anode.

## Claims

### Claim 1

A semiconductor device comprising:
a first capacitor having a first end and a first another end, the first end for electrically connecting to at least one of a first electrode and a second electrode of a transistor having the first electrode, the second electrode, and a gate electrode;
a first diode having a first anode and a first cathode, the first anode electrically connected to the first another end;
a second capacitor having a second end and a second another end, the second end electrically connected to the first cathode;
a sample and hold circuit electrically connected to the first cathode and the second end;
a switch electrically connected in parallel with the second capacitor between the second end and the second another end; and
a second diode having a second anode and a second cathode, the second cathode electrically connected to the first another end and the first anode,
wherein a power supply voltage VDD of the transistor, a capacitance C1 of the first capacitor, and a capacitance C2 of the second capacitor satisfy 15V≤(C1VDD)/(C1+C2).

### Claim 2 (depends on 1)

The device according to claim 1, wherein
the first diode has a Schottky barrier diode.

### Claim 3 (depends on 1)

The device according to claim 1, wherein
the first capacitor and the second capacitor are film capacitors or ceramic capacitors.

### Claim 4 (depends on 1)

The device according to claim 1, wherein
the capacitance C1 of the first capacitor is 1/10 or less of an output capacitance of the transistor.

### Claim 5 (depends on 1)

The device according to claim 1, wherein
the capacitance C2 of the second capacitor is 100 pF or more.

### Claim 6 (depends on 2)

The device according to claim 2, wherein
the first diode further has a PN diode.

### Claim 7 (depends on 6)

The device according to claim 6,
wherein the Schottky barrier diode has a third anode and a third cathode, the PN diode has a fourth anode and a fourth cathode, the third anode is electrically connected to the first another end, the third cathode is electrically connected to the fourth anode, and the fourth cathode is electrically connected to the second end.

### Claim 8 (depends on 6)

The device according to claim 6,
wherein the Schottky barrier diode has a third anode and a third cathode, the PN diode has a fourth anode and a fourth cathode, the fourth anode is electrically connected to the first another end, the fourth cathode is electrically connected to the third anode, and the third cathode is electrically connected to the second end.

### Claim 9

A power conversion device comprising:
a transistor having a first electrode, a second electrode, and a gate electrode;
a first capacitor having a first end and a first another end, the first end electrically connected to at least one of the first electrode and the second electrode;
a first diode having a first anode and a first cathode, the first anode electrically connected to the first another end;
a second capacitor having a second end and a second another end, the second end electrically connected to the first cathode;
a sample and hold circuit electrically connected to the first cathode and the second end;
a switch electrically connected in parallel with the second capacitor between the second end and the second another end;
a second diode having a second anode and a second cathode, the second cathode electrically connected to the first another end and the first anode;
a variable resistor electrically connected to the gate electrode; and
a controller configured to control a resistance value of the variable resistor based on a voltage value output from the sample and hold circuit.

### Claim 10 (depends on 9)

The device according to claim 9, wherein
the first diode has a Schottky barrier diode.

### Claim 11 (depends on 9)

The device according to claim 9, wherein
the first capacitor and the second capacitor are film capacitors or ceramic capacitors.

### Claim 12 (depends on 9)

The device according to claim 9, wherein
a power supply voltage VDD of the transistor, a capacitance C1 of the first capacitor, and a capacitance C2 of the second capacitor satisfy 15V≤(C1VDD)/(C1+C2)×Vdd.

### Claim 13 (depends on 9)

The device according to claim 9, wherein
a capacitance C1 of the first capacitor is 1/10 or less of an output capacitance of the transistor.

### Claim 14 (depends on 9)

The device according to claim 9, wherein
a capacitance C2 of the second capacitor is 100 pF or more.

### Claim 15 (depends on 9)

The device according to claim 9, further comprising:
an analog-digital converter connected to the sample and hold circuit.

### Claim 16 (depends on 9)

A driving device comprising:
the power conversion device according to claim 9.

### Claim 17 (depends on 9)

A vehicle comprising:
the power conversion device according to claim 9.

### Claim 18 (depends on 9)

An elevator comprising:
the power conversion device according to claim 9.

### Claim 19 (depends on 10)

The device according to claim 10, wherein
the first diode further has a PN diode.

### Claim 20 (depends on 19)

The device according to claim 19,
wherein the Schottky barrier diode has a third anode and a third cathode, the PN diode has a fourth anode and a fourth cathode, the third anode is electrically connected to the first another end, the third cathode is electrically connected to the fourth anode, and the fourth cathode is electrically connected to the second end.

### Claim 21 (depends on 19)

The device according to claim 19,
wherein the Schottky barrier diode has a third anode and a third cathode, the PN diode has a fourth anode and a fourth cathode, the fourth anode is electrically connected to the first another end, the fourth cathode is electrically connected to the third anode, and the third cathode is electrically connected to the second end.

### Claim 22

A power conversion device comprising:
a transistor having a first electrode, a second electrode, and a gate electrode;
a first capacitor having a first end and a first another end, the first end electrically connected to at least one of the first electrode and the second electrode;
a first diode having a first anode and a first cathode, the first anode electrically connected to the first another end;
a second capacitor having a second end and a second another end, the second end electrically connected to the first cathode;
a sample and hold circuit electrically connected to the first cathode and the second end;
a switch electrically connected in parallel with the second capacitor between the second end and the second another end;
a second diode having a second anode and a second cathode, the second cathode electrically connected to the first another end and the first anode,
wherein a power supply voltage VDD of the transistor, a capacitance C1 of the first capacitor, and a capacitance C2 of the second capacitor satisfy 15V≤(C1VDD)/(C1+C2)×Vdd.

### Claim 23 (depends on 22)

The device according to claim 22, further comprising:
a variable resistor electrically connected to the gate electrode; and
a controller configured to control a resistance value of the variable resistor based on a voltage value output from the sample and hold circuit.

### Claim 24 (depends on 22)

The device according to claim 22, wherein
the first diode has a Schottky barrier diode.

### Claim 25 (depends on 22)

The device according to claim 22, wherein
the first capacitor and the second capacitor are film capacitors or ceramic capacitors.

### Claim 26 (depends on 22)

The device according to claim 22, wherein
the capacitance C1 of the first capacitor is 1/10 or less of an output capacitance of the transistor.

### Claim 27 (depends on 22)

The device according to claim 22, wherein
the capacitance C2 of the second capacitor is 100 pF or more.

### Claim 28 (depends on 22)

The device according to claim 22, further comprising:
an analog-digital converter connected to the sample and hold circuit.

### Claim 29 (depends on 22)

A driving device comprising:
the power conversion device according to claim 22.

### Claim 30 (depends on 22)

A vehicle comprising:
the power conversion device according to claim 22.

### Claim 31 (depends on 22)

An elevator comprising:
the power conversion device according to claim 22.

### Claim 32 (depends on 24)

The device according to claim 24, wherein
the first diode further has a PN diode.

### Claim 33 (depends on 32)

The device according to claim 32,
wherein the Schottky barrier diode has a third anode and a third cathode, the PN diode has a fourth anode and a fourth cathode, the third anode is electrically connected to the first another end, the third cathode is electrically connected to the fourth anode, and the fourth cathode is electrically connected to the second end.

### Claim 34 (depends on 32)

The device according to claim 32,
wherein the Schottky barrier diode has a third anode and a third cathode, the PN diode has a fourth anode and a fourth cathode, the fourth anode is electrically connected to the first another end, the fourth cathode is electrically connected to the third anode, and the third cathode is electrically connected to the second end.
