# US 10,483,721 B2 · Reflector, vertical cavity light-emitting device, and method of producing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,483,721 B2 - Document ID: US10483721B2 - Status: Granted - Kind: B2 - Application number: 15/789,919 - Filed: 2017-10-20 - Published: 2018-04-26 - Granted: 2019-11-19 - Earliest claimed: 2016-10-24 - Assignees: Stanley Electric Co., Ltd. - Applicants: Stanley Electric Co., Ltd. - Inventors: Komei Tazawa; Ji-Hao Liang; Seiichiro Kobayashi - Web page: https://patentgrep.com/patent/US10483721B2 ## CPC - H01S 5/18377: {comprising layers of different kind of materials, e.g. combinations of semiconducting with dielectric or metallic layers} - H01S 5/0206: {Substrates, e.g. growth, shape, material, removal or bonding; (specific crystal orientation H01S5/3202)} - H01S 5/0207: {Substrates having a special shape} - H01S 5/1231: {Grating growth or overgrowth details} - H10H 20/8142: {forming resonant cavity structures} - H01S 5/125: Distributed Bragg reflector [DBR] lasers - H01S 5/183: having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] - H10H 20/819: characterised by their shape, e.g. curved or truncated substrates - H10P 14/271: {characterised by the preparation of substrate for selective deposition} - H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract A vertical cavity light-emitting device includes: a semiconductor substrate having a hexagonal crystal structure; a line mask extending linearly along at least one of a [11-20] direction and directions equivalent to the [11-20] direction on a c-plane of the semiconductor substrate; a first reflector provided on an exposed region exposed from the line mask on the c-plane of the semiconductor substrate, the first reflector comprising a high refractive index semiconductor film and a low refractive index semiconductor film having a refractive index smaller than that of the high refractive index semiconductor film, the high refractive index semiconductor film and the low refractive index semiconductor film being alternately layered; a light-emitting structure layer provided on the first reflector; and a second reflector disposed on the light-emitting structure layer so as to be opposed so the first reflector. ## Claims ### Claim 1 A vertical cavity light-emitting device comprising: a semiconductor substrate having a hexagonal crystal structure; a line mask extending linearly along at least a [11-20] direction, a [-12-10] direction, and a [2-1-10] direction on a c-plane of the semiconductor substrate; a first reflector formed on an exposed region exposed from the line mask on the c-plane of the semiconductor substrate, the first reflector comprising a high refractive index semiconductor film and a low refractive index semiconductor film having a refractive index smaller than that of the high refractive index semiconductor film, the high refractive index semiconductor film and the low refractive index semiconductor film being alternately layered; a light-emitting structure layer formed on the first reflector; and a second reflector disposed on the light-emitting structure layer so as to be opposed to the first reflector. ### Claim 2 (depends on 1) The vertical cavity light-emitting device according to claim 1, wherein: the line mask includes a pair of line parts extending parallel to each other along one of the [11-20] direction and directions equivalent to the [11-20] direction, and the first reflector is formed on the exposed region of the semiconductor substrate between the pair of line parts. ### Claim 3 (depends on 2) The vertical cavity light-emitting device according to claim 2, wherein the first reflector and the light-emitting structure layer are formed in a region surrounded by a (11-22) plane and a plane equivalent to the (11-22) plane including side edges of the pair of line parts. ### Claim 4 (depends on 1) The vertical cavity light-emitting device according to claim 1, wherein the line mask is formed so as to surround the exposed region on the c-plane of the semiconductor substrate. ### Claim 5 (depends on 1) The vertical cavity light-emitting device according to claim 1, wherein: the semiconductor substrate is a GaN substrate, the high refractive index semiconductor film is a GaN film, and the low refractive index semiconductor film is an AlInN film, and an In composition of the AlInN film is less than 18%. ### Claim 6 (depends on 1) A method of producing the vertical cavity light-emitting device according to claim 1, comprising: forming the line mask to extend linearly along at least the [11-20] direction, the [-12-10] direction, and the [2-1-10] direction on the c-plane of the semiconductor substrate having the hexagonal crystal structure; forming the first reflector by alternately growing the high refractive index semiconductor film and the low refractive index semiconductor film having the refractive index smaller than that of the high refractive index semiconductor film on the exposed region exposed from the line mask on the c-plane of the semiconductor substrate; growing the light-emitting structure layer on the first reflector; and forming the second reflector at a position on the light-emitting structure layer that is opposed to the first reflector. ### Claim 7 (depends on 6) The method according to claim 6, wherein the line mask is formed on the c-plane of the semiconductor such that the line mask includes a pair of line parts extending parallel to each other along one of the [11-20] direction and directions equivalent to the [11-20] direction. ### Claim 8 (depends on 7) The method according to claim 7, wherein the first reflector is grown in a region surrounded by a (11-22) plane and a plane equivalent to the (11-22) plane including side edges of the pair of line parts. ### Claim 9 (depends on 6) The method according to claim 6, wherein further comprising forming a recess to divide the light-emitting structure layer into a plurality of light-emitting segments. ### Claim 10 (depends on 6) The method according to claim 6, wherein: the semiconductor substrate is a GaN substrate, the high refractive index semiconductor film is a GaN film, and the low refractive index semiconductor film is an AlInN film.