# US 10,483,719 B2 · Semiconductor devices with depleted heterojunction current blocking regions

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 10,483,719 B2
- Document ID: US10483719B2
- Status: Granted
- Kind: B2
- Application number: 15/648,235
- Filed: 2017-07-12
- Published: 2018-01-18
- Granted: 2019-11-19
- Earliest claimed: 2016-07-13
- Assignees: University of Central Florida Research Foundation, Inc.
- Applicants: University of Central Florida Research Foundation, Inc.
- Inventors: Dennis G. Deppe
- Web page: https://patentgrep.com/patent/US10483719B2

## CPC

- H01S 5/18308: {having a special structure for lateral current or light confinement}
- H01S 5/2063: {obtained by particle bombardment}
- H10D 12/441: {Vertical IGBTs}
- H10D 30/635: {having no inversion channels, e.g. vertical accumulation channel FETs [ACCUFET] or normally-on vertical IGFETs}
- H10D 30/831: {Vertical FETs having PN junction gate electrodes (Vertical SIT H10D30/202)}
- H10D 62/106: {having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions}
- H10D 62/822: comprising only Group IV materials heterojunctions, e.g. Si/Ge heterojunctions
- H10D 62/8325: {Silicon carbide}
- H10H 20/8162: {Current-blocking structures}
- H10P 30/2042: {into crystalline silicon carbide}
- H10P 30/21: {of electrically active species}
- H10P 30/218: {characterised by the implantation in a compound semiconductor of both electrically active and inactive species in the same semiconductor region to be doped n-type or p-type}
- H01S 5/18358: {containing spacer layers to adjust the phase of the light wave in the cavity}
- H01S: DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device includes an upper and lower mirror. At least one active region for light generation is between the upper and lower mirror. At least one cavity spacer layer is between at least one of the upper and lower mirror and the active region. The device includes an inner mode confinement region and an outer current blocking region. A depleted heterojunction current blocking region (DHCBR) including a depleting impurity is within the outer current blocking region of ≥1 of the upper mirror, lower mirror, and the first active region. A middle layer including a conducting channel is within the inner mode confinement region that is framed by the DHCBR. The DHCBR forces current flow into the conducting channel during normal operation of the light source.

## Claims

### Claim 1

A semiconductor heterostructure device, comprising:
a middle layer including an inner conducting channel and an outer current blocking region, wherein said middle layer comprises an epitaxially regrown interface;
a depleted heterojunction current blocking region (DHCBR) within said outer current blocking region,
wherein said DHCBR includes a depleting impurity region comprising at least one depleting impurity which increases a depletion of said DHCBR so that said DHCBR forces current to flow into said conducting channel during electrical biasing under normal operation of said semiconductor heterostructure device, and
wherein said depleting impurity has a maximum concentration that is within 700 Åof said epitaxially regrown interface.

### Claim 2 (depends on 1)

The semiconductor heterostructure device of claim 1, wherein said depleting impurity region comprises silicon or oxygen.

### Claim 3 (depends on 1)

The semiconductor heterostructure device of claim 1, wherein said middle layer comprises AlAs.

### Claim 4 (depends on 1)

The semiconductor heterostructure device of claim 1, wherein said middle layer comprises a mesa.

### Claim 5 (depends on 1)

The semiconductor heterostructure device of claim 1, wherein said DHCBR includes a first depleting impurity specie and a second depleting impurity specie.

### Claim 6 (depends on 5)

The semiconductor heterostructure device of claim 5, wherein said first depleting impurity specie is beryllium and said second depleting impurity specie is oxygen.

### Claim 7

A semiconductor vertical resonant cavity light source, comprising:
an upper mirror comprising alternating low refractive index mirror layers and high refractive index mirror layers and a lower mirror comprising alternating low refractive index mirror layers and high refractive index mirror layers;
at least one active region for light generation between said upper mirror and said lower mirror;
at least one cavity spacer layer between at least one of said upper mirror and said lower mirror and said active region;
said light source including an inner mode confinement region and an outer current blocking region;
a depleted heterojunction current blocking region (DHCBR) including a depleting impurity region comprising at least one depleting impurity region within said outer current blocking region of at least one of said upper mirror, said lower mirror, and said active region, and
a middle layer including a conducting channel within said inner mode confinement region that is framed by said DHCBR, wherein said middle layer comprises an epitaxially regrown interface,
wherein said depleting impurity has a maximum concentration that is within 700 Åof said epitaxially regrown interface, and
wherein said DHCBR forces current flow into said conducting channel during normal operation of said light source.

### Claim 8 (depends on 7)

The light source of claim 7, wherein said middle layer comprises a low refractive index mirror layer to either said upper mirror or said lower mirror.

### Claim 9 (depends on 7)

The light source of claim 7, wherein said middle layer comprises said cavity spacer layer between at least one of said upper mirror and said lower mirror and said active region.

### Claim 10 (depends on 7)

The light source of claim 7, wherein said middle layer comprises AlAs.

### Claim 11 (depends on 7)

The light source of claim 7, wherein said cavity spacer layer includes a second impurity region.

### Claim 12 (depends on 7)

The light source of claim 7, wherein said active region includes a second impurity region.

### Claim 13 (depends on 7)

The light source of claim 7, wherein said depleting impurity region includes silicon or oxygen.

### Claim 14 (depends on 7)

The light source of claim 7, further comprising at least one upper cavity spacer layer placed between said DHCBR and said active region, wherein said conducting channel extends into said cavity spacer layer.

### Claim 15 (depends on 7)

The light source of claim 7, wherein said middle layer comprises a mesa.

### Claim 16 (depends on 7)

The light source of claim 7, wherein said depleting impurity region includes first depleting impurity specie and a second depleting impurity specie.

### Claim 17 (depends on 16)

The light source of claim 16, wherein said first depleting impurity comprises a Column II acceptor, wherein said second depleting impurity comprises oxygen.

### Claim 18 (depends on 17)

The light source of claim 17, wherein said first depleting impurity comprises beryllium.

### Claim 19

A semiconductor vertical resonant cavity light source, comprising:
an upper mirror comprising alternating low refractive index mirror layers and high refractive index mirror layers and a lower mirror comprising alternating low refractive index mirror layers and high refractive index mirror layers;
at least one active region for light generation between said upper mirror and said lower mirror;
at least one cavity spacer layer between at least one of said upper mirror and said lower mirror and said active region;
said light source including an inner mode confinement region and an outer current blocking region;
a depleted heterojunction current blocking region (DHCBR) including a depleting impurity region comprising a first depleting impurity specie comprising a Column II acceptor and a second depleting impurity comprising oxygen within said outer current blocking region of at least one of said upper mirror, said lower mirror, and said active region, and
a middle layer including a conducting channel within said inner mode confinement region that is framed by said DHCBR,
wherein said DHCBR forces current flow into said conducting channel during normal operation of said light source.