# US 10,483,610 B2 · Waveguide mount for microstrip circuit and material characterization

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- Number: US 10,483,610 B2
- Document ID: US10483610B2
- Status: Granted
- Kind: B2
- Application number: 15/684,215
- Filed: 2017-08-23
- Published: 2019-02-28
- Granted: 2019-11-19
- Earliest claimed: 2017-08-23
- Assignees: United States of America as represented by the Administrator of NASA
- Applicants: United States of America as represented by the Administrator of NASA
- Inventors: Kongpop U-Yen; Edward J. Wollack; Ari D. Brown
- Web page: https://patentgrep.com/patent/US10483610B2

## CPC

- H01P 5/087: {Transitions to a dielectric waveguide}
- H01P 1/2039: {Galvanic coupling between Input/Output}
- H01P 3/08: Microstrips; Strip lines
- H01P 5/028: {between strip lines}
- H01P 5/107: Hollow-waveguide/strip-line transitions
- H10W 42/20: protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
- H10W 44/20: at high-frequency [HF] or radio frequency [RF]
- H10W 70/68: Shapes or dispositions thereof
- H01P 1/173: {using a conductive element}
- H01P: WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE (operating at optical frequencies G02B)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

The present invention relates to a waveguide-to-microstrip line transition package for superconducting film characterization. The package allows propagation and impedance properties thin-film microwave line superconductor to be characterized at millimeter wave frequencies as a function of frequency. The superconducting film's kinetic inductance can be varied by applying direct current along the ground plane via spring loaded probe. When implemented with a non-superconducting metal housing the present invention is highly suitable for measuring resonators with the quality factor, Q, ranges from 100 to 1×104. Through the use of a housing realized from an appropriate superconducting bulk material or coating the upper end of this range of applicability can be readily extended to >1×106.

## Claims

### Claim 1

A superconducting film device comprising:
a superconducting microstrip device including:
a silicon substrate disposed on a silicon handling wafer;
a microstrip feed line; and
a plurality of superconducting microstrip resonators and a half-wavelength resonator, disposed on said silicon substrate and coupled to said microstrip feed line;
wherein said silicon substrate is a single-crystal silicon substrate of 50 μm in thickness.

### Claim 2 (depends on 1)

The superconducting film device of claim 1, wherein said plurality of superconducting microstrip resonators are niobium titanium nitride (NbTiN) microstrip resonators, and said NbTiN microstrip resonators are 80, 40, and 20 μm in width, and respectively 550, 534 and 510 μm in length.

### Claim 3 (depends on 2)

The superconducting film device of claim 2, wherein said half-wavelength resonator is a niobium (Nb) half-wavelength resonator, and said Nb resonator is 20 μm in width and 510 μm in length.

### Claim 4 (depends on 3)

The superconducting film device of claim 3, wherein said silicon handling wafer has a thickness of 325 μm, a length of 6 mm, and a width of 1.5 mm.

### Claim 5 (depends on 4)

The superconducting film device of claim 4, wherein said microstrip feedline is a niobium (Nb) microstrip feedline; and
wherein said NbTiN microstrip resonators and said Nb resonator, are each disposed 8 μm away from said Nb microstrip feed line.

### Claim 6 (depends on 1)

A waveguide-to-microstrip line transition package for superconducting film characterization, comprising:
a superconducting microstrip device of claim 1; and
a fixture in which said microstrip device is disposed;
wherein said fixture comprises:
a plurality of blocks which form a waveguide housing, and which are used to align and secure said silicon handling wafer of said microstrip device to said fixture;
a waveguide septum made from a sheet; and
a plurality of direct current (DC) probes disposed adjacent to said waveguide septum, and which contact said microstrip device to provide at least DC bias; and
further wherein a thickness of said waveguide is 100 μm, and said waveguide septum is formed from gold-plated beryllium-copper (BeCu).

### Claim 7 (depends on 6)

The package of claim 6, wherein said plurality of blocks is formed from copper, and said fixture further comprises:
a photonic choke milled onto a wall of said waveguide housing around and flanking said waveguide septum, and which defines a repeatable minimal-loss interface with high field confinement.

### Claim 8 (depends on 6)

The package of claim 6, further comprising:
a spring disposed under said microstrip device, which presses said microstrip device against said waveguide septum.

### Claim 9 (depends on 6)

The package of claim 6, further comprising:
a waveguide structure which accommodates two waveguides, each of said waveguides which are disposed in a port of said waveguide structure;
wherein each said port transmits and receives millimeter wave power into and out of said microstrip device contained in said fixture.

### Claim 10 (depends on 9)

The package of claim 9, wherein said waveguide structure includes a plurality of stages, including a plurality of ridge-guides which convert said waveguide from a relatively larger width to a relatively smaller width, ending at said microstrip device; and
wherein said plurality of ridge-guides are implemented as said waveguide septum in said fixture.

### Claim 11 (depends on 10)

The package of claim 10, wherein said septum is 100 μm in width, and a 26Ω characteristic impedance microstrip line width is 150 μm, allowing placement of said waveguide septum within a +/−25 μm alignment tolerance.

### Claim 12 (depends on 11)

The package of claim 11, wherein a ground plane of said microstrip device is realized from 0.5 μm thick niobium (Nb).

### Claim 13 (depends on 6)

The package of claim 6, wherein transmission of the package, as well as loss, is evaluated in the superconducting film through a quality factor (Q) measurement.

### Claim 14 (depends on 9)

The package of claim 9, wherein said waveguides are formed of at least one of stainless steel or copper.

### Claim 15 (depends on 14)

The package of claim 14, further comprising:
a cryogenic test apparatus in which said fixture and said waveguides are disposed, said test apparatus including:
a dewar containing liquid helium;
a shield which surrounds said microstrip device disposed in said fixture;
wherein said microstrip device in said fixture is connected to said liquid helium by a heat strap;
a helium gas purge line, which purges helium gas from said fixture;
a vacuum window, which seals room temperature ends of said waveguides;
wherein said ends of said waveguides are connected to millimeter wave extension modules via 10 dB couplers and 10 dB attenuators; and
a heater which prevents cooling of said vacuum window below dew point.

### Claim 16 (depends on 15)

The package of claim 15, wherein said microstrip device is operated between 90 and 100 GHz, is used to measure quality factor and extract complex propagation properties to an accuracy of a few parts per thousand.

### Claim 17 (depends on 16)

The package of claim 16, wherein said fixture is operated with a temperature range of from sub-kelvin to 320 K.