# US 10,483,477 B2 · Excited state management

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- Number: US 10,483,477 B2
- Document ID: US10483477B2
- Status: Granted
- Kind: B2
- Application number: 15/901,913
- Filed: 2018-02-22
- Published: 2018-07-05
- Granted: 2019-11-19
- Earliest claimed: 2014-05-28
- Assignees: The Regents of the University of Michigan; University of Southern California
- Applicants: The Regents of the University of Michigan; The University of Southern California
- Inventors: Stephen R. Forrest; Michael Slootsky; Mark E. Thompson
- Web page: https://patentgrep.com/patent/US10483477B2

## CPC

- H10K 50/121: {for assisting energy transfer, e.g. sensitization}
- C09K 11/06: containing organic luminescent materials
- H10K 50/11: characterised by the electroluminescent [EL] layers
- C09K 2211/1007: Non-condensed systems
- C09K 2211/1011: Condensed systems
- C09K 2211/1044: containing two nitrogen atoms as heteroatoms
- C09K 2211/1088: containing oxygen as the only heteroatom
- H10K 2101/10: Triplet emission
- H10K 2101/20: Delayed fluorescence emission
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- C09K: MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE

## Abstract

Arrangements and techniques for providing organic emissive layers are provided, in which the emissive layer includes a first dopant having a dissociative energy level. A second dopant in the emissive layer provides a solid state sink energy level, to which doubly excited excitons and/or polarons may transition instead of to the dissociative energy level, thereby decreasing the undesirable effects of transitions to the dissociative energy level.

## Claims

### Claim 1

An emissive layer of an opto-electronic device, the emissive layer comprising:
a host material;
a first dopant; and
a second dopant that has a solid state sink energy level,
wherein the first dopant is a blue-emitting, phosphorescent dopant that has a triplet energy level T1 that is lower than the solid state sink energy level of the second dopant, wherein the solid state sink energy level is at least 0.2 eV below the multiply-excited energy level of the first dopant, and
wherein the emissive layer is disposed between an electron-transport layer (ETL) and a hole-transport layer (HTL), and the concentration of the first dopant is graded within the host material from about 20% at the HTL/emitting layer interface to about 8% at the ETL/emitting layer interface.

### Claim 2 (depends on 1)

The emissive layer of claim 1, wherein the blue-emitting, phosphorescent dopant has a multiply-excited energy level, which is a doubly-excited triplet energy level, or a doubly-excited polaron energy level.

### Claim 3 (depends on 1)

The emissive layer of claim 1, wherein the second dopant absorbs light in the ultraviolet region of the electromagnetic spectrum.

### Claim 4 (depends on 3)

The emissive layer of claim 3, wherein the second dopant comprises 1,4,5,8-naphthalenetetracarboxylic dianhydride (NTCDA).

### Claim 5 (depends on 1)

The emissive layer of claim 1, wherein the opto-electronic device is a white-emitting OLED (WOLED).

### Claim 6 (depends on 1)

The emissive layer of claim 1, wherein the opto-electronic device is included in a consumer product selected from the group consisting of: a flat panel display, a computer monitor, a medical monitor, a television, a billboard, a light for interior or exterior illumination and/or signaling, a heads-up display, a fully or partially transparent display, a flexible display, a laser printer, a telephone, a cell phone, a tablet, a phablet, a personal digital assistant (PDA), a laptop computer, a digital camera, a camcorder, a viewfinder, a micro-display, a 3-D display, a smart watch, a vehicle, a large area wall, theater or stadium screen, and a sign.

### Claim 7

An opto-electronic device that includes an emissive layer comprising:
a host material;
a first dopant; and
a second dopant that absorbs light in the ultraviolet region of the electromagnetic spectrum, and has a solid state sink energy level,
wherein the first dopant is a blue-emitting dopant that has a triplet energy level T1 that is lower than the solid state sink energy level of the second dopant, wherein the solid state sink energy level is at least 0.2 eV below the multiply-excited energy level of the first dopant,
wherein the emissive layer is disposed between an electron-transport layer (ETL) and a hole-transport layer (HTL), and the concentration of the first dopant is graded within the host material from about 20% at the HTL/emitting layer interface to about 8% at the ETL/emitting layer interface, and the opto-electronic device is included in a consumer product selected from the group consisting of: a flat panel display, a computer monitor, a medical monitor, a television, a billboard, a light for interior or exterior illumination and/or signaling, a flexible display, a laser printer, a telephone, a cell phone, a tablet, a personal digital assistant (PDA), a laptop computer, a digital camera, a camcorder, a viewfinder, a 3-D display, a smart watch, a vehicle, a large area wall, theater or stadium screen, and a sign.

### Claim 8 (depends on 7)

The opto-electronic device of claim 7, wherein the second dopant comprises 1,4,5,8-naphthalenetetracarboxylic dianhydride (NTCDA).

### Claim 9 (depends on 7)

The opto-electronic device of claim 7, wherein the blue-emitting dopant is a phosphorescent dopant.

### Claim 10 (depends on 7)

The opto-electronic device of claim 7, wherein the blue-emitting dopant is a fluorescent dopant.

### Claim 11 (depends on 7)

The opto-electronic device of claim 7, wherein the blue-emitting dopant is a fluorescent dopant that undergoes thermally assisted delayed fluorescence.