# US 10,483,458 B2 · Magnetoresistive effect device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,483,458 B2 - Document ID: US10483458B2 - Status: Granted - Kind: B2 - Application number: 15/764,848 - Filed: 2016-06-02 - Published: 2018-09-27 - Granted: 2019-11-19 - Earliest claimed: 2015-09-30 - Assignees: TDK Corporation - Applicants: TDK Corporation - Inventors: Junichiro Urabe; Tetsuya Shibata; Atsushi Shimura; Takekazu Yamane; Tsuyoshi Suzuki - Web page: https://patentgrep.com/patent/US10483458B2 ## CPC - H10N 50/10: Magnetoresistive devices - H01F 10/325: {the spacer being noble metal} - H01F 10/3254: {the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]} - H01F 10/329: {Spin-exchange coupled multilayers wherein the magnetisation of the free layer is switched by a spin-polarised current, e.g. spin torque effect} - H01F 10/3295: {Spin-exchange coupled multilayers wherein the magnetic pinned or free layers are laminated without anti-parallel coupling within the pinned and free layers} - H03H 2/00: Networks using elements or techniques not provided for in groups H03H3/00 - H03H21/00 - H03H 11/04: Frequency selective two-port networks - H10B 61/00: Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices - H10N 59/00: Integrated devices, or assemblies of multiple devices, comprising at least one galvanomagnetic or Hall-effect element covered by groups H10N50/00 - H10N52/00 (MRAM devices H10B61/00) - H10N 50/80: Constructional details - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - H01F: MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES - H03H: IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS (waveguides, resonators, lines or other devices of the waveguide type H01P) - H10B: ELECTRONIC MEMORY DEVICES ## Abstract A magnetoresistive effect device including a magnetoresistive effect element with which a high-frequency filter can be realized is provided. Magnetoresistive effect device includes: at least one magnetoresistive effect element including a magnetization fixed layer, spacer layer, and magnetization free layer in which magnetization direction is changeable; first and second port; signal line; and direct-current input terminal. First and second ports are connected to each other via signal line. Magnetoresistive effect element is connected to signal line and is to be connected to ground in parallel to second port. Direct-current input terminal is connected to signal line. A closed circuit including magnetoresistive effect element, signal line, ground, and direct-current input terminal is to be formed. ## Claims ### Claim 1 A magnetoresistive effect device comprising: a first magnetoresistive effect element and a second magnetoresistive effect element each including a magnetization fixed layer, a spacer layer, and a magnetization free layer in which a magnetization direction is changeable; a first port via which a high-frequency signal is input; a second port via which a high-frequency signal is output; a signal line; and a direct-current input terminal, wherein the first port and the second port are connected to each other via the signal line to form a connection of the first port and the second port, the first port, the first magnetoresistive effect element and the second magnetoresistive effect element are connected in series to form a series connection with the first magnetoresistive effect element connected to the first port via the signal line and with the second magnetoresistive effect element connected to the first magnetoresistive effect element, such that the first magnetoresistive effect element is between the first port and the second magnetoresistive effect element in the series connection of the first port, the first magnetoresistive effect element and the second magnetoresistive effect element, the series connection of the first port, the first magnetoresistive effect element and the second magnetoresistive effect element is in parallel to the connection of the first port and the second port, and the direct-current input terminal is connected to the signal line. ### Claim 2 (depends on 1) The magnetoresistive effect device according to claim 1, further comprising at least one frequency setting mechanism capable of setting a spin torque resonance frequency of each of the first magnetoresistive effect element and the second magnetoresistive effect element. ### Claim 3 (depends on 2) The magnetoresistive effect device according to claim 2, wherein the frequency setting mechanism is an effective-magnetic-field setting mechanism capable of setting an effective magnetic field in the magnetization free layer of each of the first magnetoresistive effect element and the second magnetoresistive effect element, and is capable of changing the spin torque resonance frequency of each of the first magnetoresistive effect element and the second magnetoresistive effect element by changing the effective magnetic field. ### Claim 4 (depends on 2) The magnetoresistive effect device according to claim 2, wherein the at least one frequency setting mechanism includes a plurality of frequency setting mechanisms so as to be capable of setting respective spin torque resonance frequencies of the first magnetoresistive effect element and the second magnetoresistive effect element individually. ### Claim 5 (depends on 1) The magnetoresistive effect device according to claim 1, wherein the first magnetoresistive effect element and the second magnetoresistive effect element have different spin torque resonance frequencies. ### Claim 6 (depends on 5) The magnetoresistive effect device according to claim 5, wherein the first magnetoresistive effect element and the second magnetoresistive effect element have shapes for which aspect ratios differ from each other in plan view. ### Claim 7 (depends on 1) The magnetoresistive effect device according to claim 1, wherein a magnetoresistive effect element connected in series to the first port and to the second port via the signal line is not present. ### Claim 8 (depends on 1) The magnetoresistive effect device according to claim 1, further comprising a capacitor, wherein a closed circuit including the first magnetoresistive effect element, the second magnetoresistive effect element, the signal line a ground, and the direct-current input terminal is to be formed, and the capacitor is connected in series to the first port and to the second port via the signal line (i) between the closed circuit and the first port; (ii) between the closed circuit and the second port; or (iii) between the closed circuit and the first port and between the closed circuit and the second port. ### Claim 9 (depends on 1) The magnetoresistive effect device according to claim 1, further comprising a capacitor, wherein a closed circuit including the first magnetoresistive effect element, the second magnetoresistive effect element, the signal line, a ground, and the direct-current input terminal is to he formed, and the capacitor is connected in series to the first port and to the second port via the signal line at least between the closed circuit and the first port or between the closed circuit and the second port.