# US 10,483,455 B2 · Magnetic element for memory and logic > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,483,455 B2 - Document ID: US10483455B2 - Status: Granted - Kind: B2 - Application number: 14/778,704 - Filed: 2013-06-29 - Published: 2016-02-18 - Granted: 2019-11-19 - Earliest claimed: 2013-06-29 - Assignees: Intel Corporation - Applicants: Intel Corporation - Inventors: Dmitri E. Nikonov; Ian A. Young - Web page: https://patentgrep.com/patent/US10483455B2 ## CPC - H10N 50/80: Constructional details - G11C 11/161: {details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell} - H10N 50/01: Manufacture or treatment - H10N 50/10: Magnetoresistive devices - H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract An embodiment includes a magnetic tunnel junction (MTJ) having a non-elliptical free layer with rounded corners. For example, an embodiment includes a MTJ including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier between the free and fixed layers; wherein the free magnetic layer includes a top surface, a bottom surface, and a sidewall circumnavigating the free magnetic layer and coupling the bottom surface to the top surface; wherein the top surface is rectangular with a plurality of rounded corners. In an embodiment, the aspect ratio of the top surface is between 4:1 and 8:1 (length to width). Such an embodiment provides ease of manufacture along with accept critical switching current (to reverse polarity of the free layer) and stability. Other embodiments are described herein. ## Claims ### Claim 1 An apparatus comprising: a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier between the free and fixed layers; and a fin of a finFET, the fin being coupled to a substrate; wherein the free magnetic layer includes a top surface, a bottom surface, and a sidewall circumnavigating the free magnetic layer and coupling the bottom surface to the top surface; wherein the top surface is rectangular with a plurality of rounded corners; wherein the top surface includes: (a)(i) a long axis and a short axis, (a)(ii) the short axis is orthogonal to the long axis, (a)(iii) two linear long sides generally parallel to the long axis, and (a)(iv) two linear short sides generally parallel to the short axis; wherein: (b)(i) a width extends from one of the two linear long sides to another of the two linear long sides, (b)(ii) the width is parallel to the short axis, (b)(iii) a length extends from one of the two linear short sides to another of the two linear short sides, and (b)(iv) the length is parallel to the long axis; wherein: (c)(i) the fin has opposing sidewalls, (c)(ii) the fin has a fin width, (c)(iii) the fin width includes a maximum width between the opposing sidewalls, and (c)(iv) the fin width is substantially equal to the width. ### Claim 2 (depends on 1) The apparatus of claim 1, wherein an aspect ratio of the length to the width is between 3:1 and 8:1. ### Claim 3 (depends on 2) The apparatus of claim 2, wherein one of the plurality of rounded corners includes a radius of curvature between 6 and 18 nm. ### Claim 4 (depends on 2) The apparatus of claim 2, wherein the MTJ couples a bit line to a selection switch and a word line. ### Claim 5 (depends on 2) The apparatus of claim 2 wherein the width is equal to a critical dimension for the apparatus. ### Claim 6 (depends on 2) The apparatus of claim 2 including an interconnect line having a line width, extending between and orthogonal to two sidewalls of the line, equal to the width. ### Claim 7 (depends on 2) The apparatus of claim 2 wherein the length is less than 130 nm, the width is less than 25 nm, and a thickness for the free magnetic layer is less than 4 nm. ### Claim 8 (depends on 2) The apparatus of claim 2, wherein the free magnetic layer includes (a) a stability factor greater than 70 kT, where T=temperature and k=Boltzmann constant, and (b) a critical switching current less than 150 μA. ### Claim 9 (depends on 8) The apparatus of claim 8 comprising a switching current of less than 150 μA. ### Claim 10 (depends on 1) The apparatus of claim 1, wherein (a) a rounded corner directly connects to one of the two linear long sides and one of the two linear short sides, (b) the two linear short sides are each at least 25% as long as the width, and (c) the two linear long sides are each at least 50% as long as the length. ### Claim 11 (depends on 1) The apparatus of claim 1 wherein the free layer changes magnetization direction along the long axis based on polarization of driving current passed to the free layer. ### Claim 12 (depends on 1) The apparatus of claim 1 comprising a spin torque transfer memory (STTM) that includes the MTJ. ### Claim 13 An apparatus comprising: a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier between the free and fixed layers; and a fin of a finFET; wherein the free magnetic layer (a) includes a length-to-width ratio between 3:1 and 9:1, (b) is non-elliptical, and (c) has a top surface with two opposing linear side portions that are parallel to a long axis of the top surface; wherein the free magnetic layer includes a width orthogonal to the two linear side portions and extending from one of the two linear side portions to another of the two linear side portions; wherein the width is no greater than a maximum width between two sidewalls of the fin. ### Claim 14 (depends on 13) The apparatus of claim 13, wherein one of the linear side portions connects to a rounded corner that includes a radius of curvature between 6 and 18 nm. ### Claim 15 (depends on 13) The apparatus of claim 13 wherein the width is equal to a critical dimension for the apparatus. ### Claim 16 (depends on 13) The apparatus of claim 13, comprising: a length orthogonal to the width and extending from one end of the free magnetic layer to another end of the free magnetic layer; wherein the two linear side portions are each at least 50% as long as the length. ### Claim 17 (depends on 13) The apparatus of claim 13 comprising a selection switch configured to select the MTJ, wherein the selection switch includes the finFET. ### Claim 18 (depends on 1) The apparatus of claim 1 comprising a selection switch configured to select the MTJ, wherein the selection switch includes the finFET.