# US 10,483,452 B2 · Piezoelectric film and piezoelectric element including the same

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- Number: US 10,483,452 B2
- Document ID: US10483452B2
- Status: Granted
- Kind: B2
- Application number: 16/208,343
- Filed: 2018-12-03
- Published: 2019-05-23
- Granted: 2019-11-19
- Earliest claimed: 2016-08-31
- Assignees: FUJIFILM Corporation
- Applicants: FUJIFILM Corporation
- Inventors: Naoki Murakami; Daigo Sawaki
- Web page: https://patentgrep.com/patent/US10483452B2

## CPC

- C01F 17/32: oxide or hydroxide being the only anion, e.g. NaCeO2 or MgxCayEuO
- C01G 25/00: Compounds of zirconium
- C01G 33/00: Compounds of niobium
- C01G 33/006: {Compounds containing niobium, with or without oxygen or hydrogen, and containing two or more other elements}
- C23C 14/08: Oxides (C23C14/10 takes precedence)
- C23C 16/40: Oxides
- H10N 30/076: by vapour phase deposition
- H10N 30/20: with electrical input and mechanical output, e.g. functioning as actuators or vibrators
- H10N 30/704: {based on piezoelectric or electrostrictive films or coatings}
- H10N 30/853: Ceramic compositions
- H10N 30/8554: {Lead-zirconium titanate [PZT] based}
- H10N 30/87: Electrodes or interconnections, e.g. leads or terminals
- C01P 2002/34: perovskite-type (ABO3)
- C01P 2002/54: one element only
- C01P 2002/72: by d-values or two theta-values, e.g. as X-ray diagram
- C01P 2006/40: Electric properties
- C01F: COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts of peroxyacids C01B15/00; sulfides or polysulfides of magnesium, calcium, strontium, or barium C01B17/42; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds other than ammonia or cyanogen containing nitrogen and non-metals and optionally metals C01B21/082; amides or imides of silicon C01B21/087}; metal {imides or} amides C01B21/092, {C01B21/0923}; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanic acid C01C3/14; salts of cyanamide C01C3/16; thiocyanates C01C3/20; {double sulfates of magnesium with sodium or potassium C01D5/12; with other alkali metals C01D15/00, C01D17/00})
- C01G: COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts or peroxyacids C01B15/00; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium, or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds containing nitrogen, other non-metals and metal C01B21/082}; metal amides C01B21/092; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanamide C01C3/16; thiocyanates C01C3/20)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

## Abstract

In the piezoelectric film including a perovskite oxide which is represented by General Formula P, 0.1≤x≤0.3 and 0<y≤0.49x are satisfied, A1+δ[(Zr,Ti)1-x-yNbxScy]Oz . . . General Formula P, in General Formula P, A is an A-site element primarily containing Pb, δ=0 and z=3 are standard values, but δ and z may deviate from standard values in a range in which a perovskite structure is capable of being obtained.

## Claims

### Claim 1

A piezoelectric film comprising:
a perovskite oxide which is represented by General Formula P,
A1+δ[(Zr,Ti)1-x-yNbxScy]Oz General Formula P
in General Formula P, A is an A-site element primarily containing Pb, δ=0 and z=3 are standard values, but δ and z may deviate from the standard values in a range in which a perovskite structure is capable of being obtained,
wherein 0.1≤x≤0.3 and 0<y≤0.49x are satisfied.

### Claim 2 (depends on 1)

The piezoelectric film according to claim 1,
wherein 0<y≤0.049 is satisfied.

### Claim 3 (depends on 1)

The piezoelectric film according to claim 1,
wherein 0<y≤0.03 is satisfied.

### Claim 4 (depends on 1)

The piezoelectric film according to claim 1,
wherein 0.1≤x≤0.2 is satisfied.

### Claim 5 (depends on 1)

The piezoelectric film according to claim 1,
wherein the piezoelectric film is a columnar crystal film formed of a number of columnar crystals.

### Claim 6 (depends on 1)

The piezoelectric film according to claim 1,
wherein the piezoelectric film has a film thickness of 1 μm or greater.

### Claim 7 (depends on 1)

A piezoelectric element comprising:
the piezoelectric film according to claim 1; and
an electrode which applies an electric field to the piezoelectric film.
