# US 10,483,450 B1 · Internal electric converter

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- Number: US 10,483,450 B1
- Document ID: US10483450B1
- Status: Granted
- Kind: B1
- Application number: 14/953,327
- Filed: 2015-11-28
- Granted: 2019-11-19
- Earliest claimed: 2015-11-28
- Applicants: Cody Brian Wabiszewski
- Inventors: Cody Brian Wabiszewski
- Web page: https://patentgrep.com/patent/US10483450B1

## CPC

- H10N 19/101: {Multiple thermocouples connected in a cascade arrangement}
- H10N 10/01: Manufacture or treatment
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

A semiconductor cell that allows thermally excited electron hole pairs to be harnessed as usable energy. The material bandgap and dopant levels of various layers allows for voltage potential and current to be created. The energy production results in a lowered temperature in the cell. Energy is transferred back to the cell in the form of heat from the surroundings via convection or conduction. Cell layout is a n n++-p++ p configuration and a module has multiple cells.

## Claims

### Claim 1

A cell comprising:
a first substrate with a first substrate first side and a first substrate second side, wherein the first substrate is electrically insulating and thermally conductive;
a first electrical contact with a first electrical contact first side and a first electrical contact second side, wherein the first electrical contact first side is connected to the first substrate second side;
a first n-type semiconductor layer with a first n-type dopant concentration and a first n-type semiconductor layer first side and a first n-type semiconductor layer second side, wherein the first n-type semiconductor layer first side is connected to the first electrical contact second side;
a second n-type semiconductor layer with a second n-type dopant concentration and a second n-type semiconductor layer first side and a second n-type semiconductor layer second side, wherein the second n-type dopant concentration is higher than the first n-type dopant concentration and the second n-type semiconductor layer first side is electrically and directly physically connected to the first n-type semiconductor layer second side;
a first p-type semiconductor layer with a first p-type dopant concentration and a first p-type semiconductor layer first side and a first p-type semiconductor layer second side, wherein the first p-type semiconductor layer first side is connected to the second n-type semiconductor layer second side;
a second p-type semiconductor layer with a second p-type dopant concentration and a second p-type semiconductor layer first side and a second p-type semiconductor layer second side, wherein the first p-type dopant concentration is higher than the second p-type dopant concentration and the second p-type semiconductor layer first side is electrically and directly physically connected to the first p-type semiconductor layer second side;
a second electrical contact with a second electrical contact first side and a second electrical contact second side, wherein the second electrical contact first side is connected to the second p-type semiconductor layer second side;
a second substrate with a second substrate first side and a second substrate second side, wherein the second substrate is electrically insulating and thermally conductive and the second substrate first side is connected to the second electrical contact second side.

### Claim 2 (depends on 1)

The cell of claim 1, further comprising a first heat exchanger connected to the first substrate first side.

### Claim 3 (depends on 1)

The cell of claim 1, wherein the first heat exchanger is a gas, a fluid, a heat sink or a plate type heat exchanger.

### Claim 4 (depends on 2)

The cell of claim 2: further comprising a second heat exchanger connected to the second substrate second side.

### Claim 5 (depends on 4)

The cell of claim 4, wherein the second heat exchanger is a gas, a fluid, a heat sink or a plate type heat exchanger.

### Claim 6 (depends on 1)

The cell of claim 1, wherein the first substrate is a ceramic substrate.

### Claim 7 (depends on 6)

The cell of claim 6, wherein the ceramic substrate is Aluminum Nitride (AlN), Aluminum Oxide (Al2O3) or beryllium oxide (BeO).

### Claim 8 (depends on 1)

The cell of claim 1, wherein the second substrate is a ceramic substrate.

### Claim 9 (depends on 8)

The cell of claim 8, wherein the ceramic substrate is Aluminum Nitride (AlN), Aluminum Oxide (Al2O3) or beryllium oxide (BeO).

### Claim 10 (depends on 1)

The cell of claim 1, wherein the first n-type semiconductor layer is MgSn, MgPb, MgBi, FeSi, CoO, NiS, Sn, PbS, BiTe, PbTe, BiSe, CrO, SnTe, HgCdTe, PbSe, InAs or InSb.

### Claim 11 (depends on 1)

The cell of claim 1, wherein the second n-type semiconductor layer is MgSn, MgPb, MgBi, FeSi, CoO, NiS, Sn, PbS, BiTe, PbTe, BiSe, CrO, SnTe, HgCdTe, PbSe, InAs or InSb.

### Claim 12 (depends on 1)

The cell of claim 1, wherein the first p-type semiconductor layer is MgSn, MgPb, MgBi, FeSi, CoO, NiS, Sn, PbS, BiTe, PbTe, BiSe, CrO, SnTe, HgCdTe, PbSe, InAs or InSb.

### Claim 13 (depends on 1)

The cell of claim 1, wherein the second p-type semiconductor layer is MgSn, MgPb, MgBi, FeSi, CoO, NiS, Sn, PbS, BiTe, PbTe, BiSe, CrO, SnTe, HgCdTe, PbSe, InAs or InSb.

### Claim 14 (depends on 1)

The cell of claim 1, wherein the first n-type dopant concentration at the first n-type semiconductor layer first side is greater than the first n-type dopant concentration at the first n-type semiconductor second side.

### Claim 15 (depends on 1)

The cell of claim 1, wherein the second p-type dopant concentration at the second p-type semiconductor layer second side is greater than the second p-type dopant concentration at the second p-type semiconductor first side.

### Claim 16 (depends on 1)

The cell of claim 1, wherein the connection between the first electrical contact second side and the first n-type semiconductor layer first side is an ohmic contact.

### Claim 17 (depends on 1)

The cell of claim 1, wherein the connection between the second electrical contact first side and the second p-type semiconductor layer second side is an ohmic contact.

### Claim 18 (depends on 1)

The cell of claim 1, further comprising a first n-type material diffusion length, wherein the distance between the first side of the first n-type material and the second side of the second n-type material is between one atom thick and 110 percent of the first n-type material diffusion length.

### Claim 19 (depends on 1)

The cell of claim 1, further comprising a second p-type material diffusion length, wherein the distance between the first side of the first p-type material and the second side of the second p-type material is between one atom thick and 110 percent of the second p-type material diffusion length.

### Claim 20 (depends on 1)

The cell of claim 1, wherein the difference in the first n-type dopant concentration and second n-type dopant concentration results in a minority carrier concentration gradient when the cell is in thermal equilibrium.

### Claim 21 (depends on 1)

The cell of claim 1, wherein the difference in the first p-type dopant concentration and second p-type dopant concentration results in a minority carrier concentration gradient when the cell is in thermal equilibrium.