# US 10,483,439 B2 · Optoelectronic device with silicon slice cover arranged downstream of a conversion element

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- Number: US 10,483,439 B2
- Document ID: US10483439B2
- Status: Granted
- Kind: B2
- Application number: 15/316,144
- Filed: 2015-06-02
- Published: 2017-05-04
- Granted: 2019-11-19
- Earliest claimed: 2014-06-05
- Assignees: OSRAM Opto Semiconductors GmbH
- Applicants: OSRAM Opto Semiconductors GmbH
- Inventors: Hubert Halbritter; Britta Göötz
- Web page: https://patentgrep.com/patent/US10483439B2

## CPC

- H10H 20/8512: {Wavelength conversion materials}
- H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings
- H10H 20/855: Optical field-shaping means, e.g. lenses
- H10H 20/8515: {not being in contact with the bodies}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

The invention relates to an optoelectronic component (10) comprising —a radiation-emitting semiconductor chip (2), —a conversion element (8) which is suitable for converting at least one part of the radiation (12) emitted by the semiconductor chip (2) into a converted radiation (13), said converted radiation (13) having a longer wavelength than the emitted radiation (12), and —a cover (9) which is permeable at least to the converted radiation (13) and which follows the conversion element (8) in a main emission direction, wherein —the conversion element (8) comprises a quantum dot converter material (7), —the conversion element (8) is arranged on a cover (9) inner face (15) facing the semiconductor chip, and —the cover has silicon (9) or consists of silicon.

## Claims

### Claim 1

An optoelectronic device, comprising:
a radiation-emitting semiconductor chip, wherein the emitted radiation is infrared radiation having a wavelength of <1100 nm;
a conversion element comprising a quantum dot converter material suitable for converting at least part of the emitted radiation into converted radiation, wherein the converted radiation from the quantum dot converter material is infrared radiation having a wavelength of >1200 nm; and
a cover which is substantially transmissive for the converted radiation and which is arranged downstream of the conversion element in a main emission direction,
wherein the conversion element is arranged on an inner side of the cover facing the semiconductor chip,
wherein the cover comprises silicon or is a silicon slice comprising an absorption edge, which lies at around 1100 nm, and
wherein the cover effectively suppresses the emitted radiation.

### Claim 2 (depends on 1)

The optoelectronic device according to claim 1, wherein the cover is between 100 μm and 500 μm thick.

### Claim 3 (depends on 1)

The optoelectronic device according to claim 1, wherein an outer side of the cover remote from the semiconductor chip comprises a pattern for shaping the beam of radiation emitted by the optoelectronic device.

### Claim 4 (depends on 3)

The optoelectronic device according to claim 3, wherein the pattern is a microlens pattern or a microprism pattern.

### Claim 5 (depends on 1)

The optoelectronic device according to claim 1, wherein an outer side of the cover remote from the semiconductor chip comprises roughening.

### Claim 6 (depends on 1)

The optoelectronic device according to claim 1, wherein an outer side of the cover remote from the semiconductor chip comprises an antireflection coating.

### Claim 7 (depends on 1)

The optoelectronic device according to claim 1, wherein the cover is connected thermally conductively with a package of the optoelectronic device.

### Claim 8 (depends on 1)

The optoelectronic device according to claim 1, wherein the radiation-emitting semiconductor chip comprises an active layer, which comprises AlnGamIn1-n-mAs with 0≤n≤1, 0≤m≤1 and n+m≤1.

### Claim 9 (depends on 1)

The optoelectronic device according to claim 1, wherein the radiation-emitting semiconductor chip is an IR luminescent diode chip or an IR semiconductor laser chip.