# US 10,483,435 B2 · Semiconductor light emitting device

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- Number: US 10,483,435 B2
- Document ID: US10483435B2
- Status: Granted
- Kind: B2
- Application number: 16/015,282
- Filed: 2018-06-22
- Published: 2018-10-18
- Granted: 2019-11-19
- Earliest claimed: 2007-04-16
- Assignees: Rohm Co., Ltd.
- Applicants: Rohm Co., Ltd.
- Inventors: Masakazu Takao; Mitsuhiko Sakai; Kazuhiko Senda
- Web page: https://patentgrep.com/patent/US10483435B2

## CPC

- H10H 20/841: Reflective coatings, e.g. dielectric Bragg reflectors
- H10H 20/811: having quantum effect structures or superlattices, e.g. tunnel junctions
- H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures
- H10H 20/814: having reflecting means, e.g. semiconductor Bragg reflectors
- H10H 20/8162: {Current-blocking structures}
- H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers
- H10H 20/824: comprising only Group III-V materials, e.g. GaP
- H10H 20/832: characterised by their material
- H10H 20/835: {Reflective materials}
- H10H 20/856: Reflecting means
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS

## Abstract

A semiconductor light emitting device includes a conductive substrate and a first metal layer disposed on the substrate. The first metal layer is formed so as to be electrically connected with the substrate, and the first metal layer includes an Au based material. A joining layer is formed on the first metal layer. The joining layer includes a second metal layer including Au and a third metal layer including Au. A metallic contact layer and an insulating layer are formed on the joining layer. A semiconductor layer is formed on the metallic contact layer and the insulating layer and includes a red-based light emitting layer. An electrode is formed on the semiconductor layer and is made of metal. The insulating layer includes a patterned aperture, and at least a part of the metallic contact layer is formed in the aperture.

## Claims

### Claim 1

A semiconductor light emitting device, comprising:
a semiconductor substrate comprising a first surface and a second surface, the second surface facing an opposite side from the first surface;
a first metal layer formed on the first surface;
a second metal layer formed on the first metal layer, the second metal layer containing Au;
an insulating layer formed above the second metal layer;
an epitaxial growth layer formed on the insulating layer;
a semiconductor layer formed on the epitaxial growth layer so that a portion of the epitaxial growth layer is exposed, the semiconductor layer containing Ga; and
a first electrode layer formed above the semiconductor layer, wherein
the epitaxial growth layer exposed from the semiconductor layer comprises an uneven portion.

### Claim 2 (depends on 1)

The semiconductor light emitting device according to claim 1, wherein a height of the uneven portion is lower than a height of the first electrode layer.

### Claim 3 (depends on 1)

The semiconductor light emitting device according to claim 1, wherein the uneven portion is a frosting processing region.

### Claim 4 (depends on 1)

The semiconductor light emitting device according to claim 1, wherein the semiconductor substrate is a Ge substrate.

### Claim 5 (depends on 1)

The semiconductor light emitting device according to claim 1, further comprising a second electrode layer formed on the second surface of the semiconductor substrate.

### Claim 6

A semiconductor light emitting device, comprising:
a semiconductor substrate comprising a first surface and a second surface, the second surface facing an opposite side from the first surface;
a first metal layer formed on the first surface;
a second metal layer formed on the first metal layer, the second metal layer containing Au;
an insulating layer formed on the second metal layer;
an epitaxial growth layer formed above the insulating layer, the epitaxial growth layer containing Ga; and
a first electrode layer formed above the epitaxial growth layer so that a portion of the epitaxial growth layer is exposed, wherein
the epitaxial growth layer exposed from the first electrode layer comprises an uneven portion.

### Claim 7 (depends on 6)

The semiconductor light emitting device according to claim 6, wherein a height of the uneven portion is lower than a height of the first electrode layer.

### Claim 8 (depends on 6)

The semiconductor light emitting device according to claim 6, wherein the uneven portion is a frosting processing region.

### Claim 9 (depends on 6)

The semiconductor light emitting device according to claim 6, wherein
the second metal layer comprises a first bonding layer and a second bonding layer, and
a semiconductor substrate side and an epitaxial growth layer side are bonded to each other by bonding the first bonding layer and the bonding metal layer.

### Claim 10 (depends on 6)

The semiconductor light emitting device according to claim 6, wherein the semiconductor substrate is a silicon substrate.

### Claim 11

A semiconductor light emitting device, comprising:
a semiconductor substrate comprising a first surface and a second surface, the second surface facing an opposite side to the first surface;
a first metal layer formed on the first surface;
a second metal layer formed on the first metal layer, the second metal layer containing Au;
an epitaxial growth layer formed above the second metal layer;
a semiconductor layer formed on the epitaxial growth layer, the semiconductor layer containing Ga;
a first region formed above the epitaxial growth layer, the first region comprising an uneven portion; and
a first electrode layer formed above the semiconductor layer, wherein
the first region is formed so as to surround the first electrode layer when viewed in a vertical direction.

### Claim 12 (depends on 11)

The semiconductor light emitting device according to claim 11, wherein a height of the uneven portion is lower than a height of the first electrode layer.

### Claim 13 (depends on 11)

The semiconductor light emitting device according to claim 11, wherein the uneven portion is a frosting processing region.

### Claim 14 (depends on 11)

The semiconductor light emitting device according to claim 11, wherein
the second metal layer comprises a first bonding layer and a second bonding layer, and
a semiconductor substrate side and an epitaxial growth layer side are bonded to each other by bonding the first bonding layer and the bonding metal layer.

### Claim 15 (depends on 11)

The semiconductor light emitting device according to claim 11, wherein the semiconductor substrate is a silicon substrate.

### Claim 16

A semiconductor light emitting device, comprising:
a semiconductor substrate comprising a first surface and a second surface, the second surface facing an opposite side to the first surface;
a first metal layer formed on the first surface, the first metal layer containing Au;
a second metal layer formed above the first metal layer, the second metal layer containing Au;
an insulating layer formed on the second metal layer;
an epitaxial growth layer formed above the insulating layer;
a semiconductor layer formed on the epitaxial growth layer so that a portion of the epitaxial growth layer is exposed, the semiconductor layer containing Ga; and
a first electrode layer formed above the semiconductor layer, wherein
the epitaxial growth layer exposed from the semiconductor layer comprises an uneven portion.

### Claim 17 (depends on 16)

The semiconductor light emitting device according to claim 16, wherein a height of the uneven portion is lower than a height of the first electrode layer.

### Claim 18 (depends on 16)

The semiconductor light emitting device according to claim 16, wherein the uneven portion is a frosting processing region.

### Claim 19 (depends on 16)

The semiconductor light emitting device according to claim 16, wherein the semiconductor substrate is a Ge substrate.

### Claim 20 (depends on 16)

The semiconductor light emitting device according to claim 16, further comprising a second electrode layer formed on the second surface of the semiconductor substrate.