# US 10,483,433 B2 · Ultraviolet light emitting devices > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,483,433 B2 - Document ID: US10483433B2 - Status: Granted - Kind: B2 - Application number: 16/051,684 - Filed: 2018-08-01 - Published: 2019-06-20 - Granted: 2019-11-19 - Earliest claimed: 2017-12-19 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Young Hwan Park; Joo Sung Kim; Young Jo Tak - Web page: https://patentgrep.com/patent/US10483433B2 ## CPC - H10H 20/819: characterised by their shape, e.g. curved or truncated substrates - H10H 20/0137: {the light-emitting regions comprising nitride materials} - H10H 20/8162: {Current-blocking structures} - H10H 20/8215: {characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping} - H10H 20/825: containing nitrogen, e.g. GaN - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H 20/01335: {the light-emitting regions comprising nitride materials} - H10H 20/032: {of electrodes} - H10H 20/034: {of coatings} - H10H 20/812: within the light-emitting regions, e.g. having quantum confinement structures - H10H 20/815: having stress relaxation structures, e.g. buffer layers - H10H 20/816: having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures - H10H 20/832: characterised by their material - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract An embodiment of the present inventive concept provides an ultraviolet light emitting device comprising: a substrate having a concave or convex edge pattern disposed along an edge of an upper surface thereof; a semiconductor laminate disposed on the substrate and including first and second conductivity-type AlGaN semiconductor layers and an active layer disposed between the first and second conductivity-type AlGaN semiconductor layers and having an AlGaN semiconductor; a plurality of uneven portions extending from the edge pattern along the side surface of the semiconductor laminate in a stacking direction; and first and second electrodes connected to the first and second conductivity-type AlGaN semiconductor layers, respectively. ## Claims ### Claim 1 An ultraviolet light emitting device comprising: a substrate provided with an edge pattern at an upper surface thereof at side edges of the substrate, the edge pattern having a concave or convex shape with respect to the upper surface of the substrate; a semiconductor laminate disposed on the substrate and on the edge pattern and including first and second conductivity-type AlGaN semiconductor layers and an active layer disposed between the first and second conductivity-type AlGaN semiconductor layers and having an AlGaN semiconductor; a plurality of uneven portions extending from the edge pattern along side surfaces of the semiconductor laminate in a stacking direction of the semiconductor laminate; first and second electrodes connected to the first and second conductivity-type AlGaN semiconductor layers, respectively; and a plurality of even portions between the plurality of uneven portions, the plurality of even portions comprising flat side surfaces, and the plurality of uneven portions comprising cleavages in the flat side surfaces, wherein the plurality of uneven portions are a plurality of gaps in the semiconductor laminate that start at the edge pattern along the side surfaces of the semiconductor laminate. ### Claim 2 (depends on 1) The ultraviolet light emitting device of claim 1, wherein as a result of the plurality of gaps, the side surfaces of the semiconductor laminate have a greater surface area than if the edge pattern were not used and the upper surface throughout the substrate were substantially flat. ### Claim 3 (depends on 1) The ultraviolet light emitting device of claim 1, wherein each inner region between portions of the edge pattern in the upper surface of the substrate has a flat surface. ### Claim 4 (depends on 1) The ultraviolet light emitting device of claim 1, wherein the edge pattern includes a plurality of convex portions regularly spaced apart at a first pitch. ### Claim 5 (depends on 1) The ultraviolet light emitting device of claim 1, wherein the edge pattern is formed on four side edges of the substrate and has a pattern extending continuously along each side edge. ### Claim 6 (depends on 1) The ultraviolet light emitting device of claim 1, wherein the plurality of uneven portions have shapes of non-uniform lines. ### Claim 7 (depends on 1) The ultraviolet light emitting device of claim 1, wherein the plurality of uneven portions are arranged at non-uniform intervals. ### Claim 8 (depends on 1) The ultraviolet light emitting device of claim 1, wherein a width of each of the plurality of uneven portions and a direction in which each of the plurality of uneven portions extends are non-uniformly changed in the stacking direction. ### Claim 9 (depends on 1) The ultraviolet light emitting device of claim 1, wherein at least a portion of the plurality of uneven portions extends to the upper surface of the semiconductor laminate. ### Claim 10 (depends on 1) The ultraviolet light emitting device of claim 1, wherein the semiconductor laminate further includes a second conductivity-type contact layer having an energy band gap smaller than an energy band gap of the second conductivity-type AlGaN semiconductor layer on the second conductivity-type AlGaN semiconductor layer. ### Claim 11 An ultraviolet light emitting device, comprising: a substrate provided with a concave or convex edge pattern at side edges of an upper surface thereof, wherein an inner region excluding the side edges in the upper surface has a flat surface; a semiconductor laminate including a first conductivity-type AlGaN semiconductor layer, an active layer having an AlGaN quantum well, and a second conductivity-type AlGaN semiconductor layer that are sequentially disposed on the upper surface of the substrate and on the edge pattern; and a plurality of cleavages extending from the edge pattern along a side surface of the semiconductor laminate in a stacking direction of the semiconductor laminate and having shapes of non-uniform lines. ### Claim 12 (depends on 11) The ultraviolet light emitting device of claim 11, wherein the edge pattern has the same shape on all side edges of the upper surface of the substrate. ### Claim 13 (depends on 12) The ultraviolet light emitting device of claim 12, wherein the edge pattern includes a convex portion formed of an amorphous dielectric material. ### Claim 14 (depends on 11) The ultraviolet light emitting device of claim 11, wherein the plurality of cleavages have different lengths and are arranged at non-uniform intervals. ### Claim 15 (depends on 11) The ultraviolet light emitting device of claim 11, wherein at least a portion of the plurality of cleavages does not extend to an upper surface of the semiconductor laminate. ### Claim 16 (depends on 15) The ultraviolet light emitting device of claim 15, wherein a width of each of the plurality of cleavages and a direction in which each of the plurality of cleavages extends are irregularly changed in the stacking direction. ### Claim 17 (depends on 11) The ultraviolet light emitting device of claim 11, wherein the semiconductor laminate further includes an AlN base layer disposed on the upper surface of the substrate. ### Claim 18 An ultraviolet light emitting device, comprising: a substrate having a rectangular parallelepiped structure and provided with an edge pattern disposed at at least one side edge of an upper surface thereof, wherein a region excluding the edge pattern in the upper surface has a flat surface; and a semiconductor laminate disposed on the upper surface of the substrate and on the edge pattern and having a plurality of gaps on at least one side surface of the semiconductor laminate and connected to the edge pattern, the plurality of gaps extending in non-uniform manner from the edge pattern in a stacking direction of the semiconductor laminate, wherein the semiconductor laminate has an AlN base layer, a first conductivity-type AlGaN semiconductor layer, an active layer having an AlGaN quantum well, and a second conductivity-type AlGaN semiconductor layer that are sequentially grown on the upper surface of the substrate. ### Claim 19 (depends on 18) The ultraviolet light emitting device of claim 18, wherein at least a portion of the plurality of gaps does not extend to an upper surface of the semiconductor laminate. ### Claim 20 (depends on 18) The ultraviolet light emitting device of claim 18, wherein a width of each of the plurality of gaps and a direction in which each of the plurality of gaps extends are irregularly changed in a direction perpendicular to the upper surface of the substrate.