# US 10,483,414 B2 · Stack-type image sensor including meta-filter > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,483,414 B2 - Document ID: US10483414B2 - Status: Granted - Kind: B2 - Application number: 15/830,166 - Filed: 2017-12-04 - Published: 2018-06-07 - Granted: 2019-11-19 - Earliest claimed: 2016-12-05 - Assignees: Samsung Electronics Co., Ltd. - Applicants: Samsung Electronics Co., Ltd. - Inventors: Seunghoon Han; Lilong Shi; Kwanghee Lee; Changgyun Shin - Web page: https://patentgrep.com/patent/US10483414B2 ## CPC - H10F 77/413: {directly associated or integrated with the devices, e.g. back reflectors (directly associated or integrated with photovoltaic cells H10F77/42)} - H10F 30/221: the potential barrier being a PN homojunction - H10F 30/288: {the devices being sensitive to multiple wavelengths, e.g. multi-spectrum radiation detection devices} - H10F 39/1825: {Multicolour image sensors having stacked structure, e.g. NPN, NPNPN or multiple quantum well [MQW] structures} - H10F 39/8053: {Colour filters} - H10F 39/8067: {Reflectors} - H10K 39/32: Organic image sensors - Y02E 10/549: Organic PV cells - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract A stack-type image sensor may include a photodiode and a meta-filter. The photodiode may include a first photodiode configured to absorb first light of a first wavelength band and a second photodiode disposed on the first photodiode and configured to absorb second light of a second wavelength band. The meta-filter may include a first meta-filter disposed in a lower portion of the first photodiode and configured to reflect the first light of the first wavelength band to the first photodiode. ## Claims ### Claim 1 A stack-type image sensor comprising: a photodiode comprising: a first photodiode configured to absorb first light of a first wavelength band, and a second photodiode disposed on the first photodiode and configured to absorb second light of a second wavelength band; and a meta-filter comprising a plurality of nanostructures that satisfy a subwavelength condition, the meta-filter being configured to reflect light of a previously determined wavelength band, and to transmit light of wavelength bands other than the previously determined wavelength band, wherein the meta-filter further comprises a first meta-filter disposed in a lower portion of the first photodiode, the first meta-filter being configured to reflect the first light of the first wavelength band to the first photodiode. ### Claim 2 (depends on 1) The stack-type image sensor of claim 1, wherein the meta-filter further comprises a second meta-filter disposed between the first photodiode and the second photodiode, the second meta-filter being configured to reflect the second light of the second wavelength band to the second photodiode and to transmit the first light of the first wavelength band. ### Claim 3 (depends on 1) The stack-type image sensor claim 1, wherein the first photodiode is one of (i) a silicon photodiode having no light selectivity and (ii) one of an organic photodiode and a quantum dot photodiode, having light selectivity to sense the first light of the first wavelength band. ### Claim 4 (depends on 3) The stack-type image sensor of claim 3, wherein the photodiode has a thickness ranging from 30 nm to 250 nm. ### Claim 5 (depends on 1) The stack-type image sensor of claim 1, wherein the second photodiode is one of an organic photodiode and a quantum dot photodiode, having light selectivity to sense the second light of the second wavelength band. ### Claim 6 (depends on 1) The stack-type image sensor of claim 1, wherein the photodiode further comprises a third photodiode disposed on the second photodiode and configured to absorb third light of a third wavelength band, and wherein the meta-filter further comprises a third meta-filter disposed between the second photodiode and the third photodiode, and configured to reflect the third light of the third wavelength band to the third photodiode and to transmit light of other wavelength bands. ### Claim 7 (depends on 6) The stack-type image sensor of claim 6, wherein the third photodiode is one of an organic photodiode and a quantum dot photodiode, having light selectivity to sense the third light of the third wavelength band. ### Claim 8 (depends on 6) The stack-type image sensor of claim 6, wherein the third wavelength band is one of a red wavelength band, a green wavelength band, and a blue wavelength band, wherein the second wavelength band is one of the red wavelength band, the green wavelength band, and the blue wavelength band, the second wavelength band being different from the third wavelength band, and wherein the first wavelength band is one of the red wavelength band, the green wavelength band, and the blue wavelength band, the first wavelength band being different from the second wavelength band and the third wavelength band. ### Claim 9 (depends on 1) The stack-type image sensor of claim 1, wherein a nanostructure from the plurality of nanostructures has one of a one-dimensional arrangement and a two-dimensional arrangement. ### Claim 10 (depends on 9) The stack-type mage sensor of claim 9, wherein when the nanostructure has the two-dimensional arrangement, the nanostructure has one of a square shape, a cylindrical shape, a cylindroid shape, a rectangular shape, a triangular pyramid shape, and a conical shape. ### Claim 11 (depends on 9) The stack-type image sensor of claim 9, wherein when the nanostructure has the one-dimensional arrangement, the nanostructure has a bar shape, wherein the bar shape has a cross-section of one of a polygonal shape, a circular shape, and an oval shape, and wherein the polygonal shape is one of a triangular shape, a quadrilateral shape, and a pentagonal shape. ### Claim 12 (depends on 9) The stack-type image sensor of claim 9, wherein the meta-filter further comprises a surrounding structure that surrounds the nanostructure, the surrounding structure having a lower refractive index than the nanostructure. ### Claim 13 (depends on 12) The stack-type image sensor of claim 12, wherein the surrounding structure comprises one of a polymer and an oxide. ### Claim 14 (depends on 9) The stack-type image sensor of claim 9, wherein the meta-filter further comprises a surrounding structure that surrounds the nanostructure, the surrounding structure having a higher refractive index than the nanostructure. ### Claim 15 (depends on 14) The stack-type image sensor of claim 14, wherein the nanostructure comprises one of a polymer and an oxide, and wherein the surrounding structure comprises one of single crystal silicon, polycrystalline silicon, amorphous silicon, Si3N4, GaP, TiO2, AlSb, AlAs, AlGaAs, AlGaInP, BP, and ZnGeP2. ### Claim 16 (depends on 9) The stack-type image sensor of claim 9, wherein the meta-filter further comprises a nanostructure arrangement having at least one of a width, an interval, and a symmetrical axis direction varying in a horizontal direction. ### Claim 17 (depends on 1) The stack-type image sensor of claim 1, wherein a nanostructure from the plurality of nanostructures comprises one of single crystal silicon, polycrystalline silicon, amorphous silicon, silicon nitride (Si3N4), gallium phosphide (GaP), gallium arsenide (GaAs), titanium dioxide (TiO2), aluminum antimony (AlSb), aluminum arsenide (AlAs), aluminum gallium arsenide (AlGaAs), aluminum gallium indium phosphide (AlGaInP), boron phosphide (BP), and zinc-germanium diphosphide (ZnGeP2). ### Claim 18 A stack-type image sensor comprising: a first photodiode configured to absorb first light of a first wavelength band; a second photodiode disposed on the first photodiode and configured to absorb second light of a second wavelength band; and a meta-filter comprising a plurality of nanostructures that satisfy a subwavelength condition, the meta-filter being configured to reflect light of a previously determined wavelength band, and to transmit light of wavelength bands other than the previously determined wavelength band, wherein the meta-filter further comprises a first meta-filter disposed between the first photodiode and the second photodiode, the first meta-filter being configured to reflect the second light of the second wavelength band to the second photodiode and to transmit the first light of the first wavelength band. ### Claim 19 (depends on 18) The image sensor of claim 18, wherein the meta-filter further comprises a second meta-filter disposed in a lower portion of the first photodiode, the second meta-filter being configured to reflect the first light of the first wavelength band to the first photodiode. ### Claim 20 (depends on 18) The image sensor of claim 18, further comprising: a third photodiode disposed on the second photodiode and configured to absorb third light of a third wavelength band, wherein the meta-filter further comprises a third meta-filter disposed between the second photodiode and the third photodiode, the third meta-filter being configured to reflect the third light of the third wavelength band to the third photodiode and to transmit the second light of the second wavelength band.