# US 10,483,405 B2 · Metal oxide thin-film transistor and manufacturing method for the same

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- Number: US 10,483,405 B2
- Document ID: US10483405B2
- Status: Granted
- Kind: B2
- Application number: 16/387,361
- Filed: 2019-04-17
- Published: 2019-08-08
- Granted: 2019-11-19
- Earliest claimed: 2016-09-28
- Assignees: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Applicants: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Inventors: Yang Liu
- Web page: https://patentgrep.com/patent/US10483405B2

## CPC

- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/6713: {characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes}
- H10D 30/6728: {Vertical TFTs}
- H10D 30/6729: {characterised by the electrodes}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10P 76/2041: {Photolithographic processes}
- H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10D 62/17: Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
- H10D 64/23: Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D 64/62: Electrodes ohmically coupled to a semiconductor
- H10D 86/0231: {using masks, e.g. half-tone masks}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/60: wherein the TFTs are in active matrices
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A metal oxide thin-film transistor and manufacturing for the same are provided. The thin-film transistor includes a substrate; a source electrode, a barrier layer and a drain electrode which are sequentially formed on the substrate; and a semiconductor active layer formed on side surfaces of the source electrode and the drain electrode. The semiconductor active layer is connected with the source electrode and the drain electrode. The metal oxide thin-film transistor has a new structure, in which the source and drain electrodes are parallel to the substrate, and the semiconductor active layer is contacted with the source electrode and the drain electrode by a vertical covering or a step covering way. The channel length does not depend on the photolithography process, but depends on the side length of the source and drain electrodes contacted with the semiconductor active layer.

## Claims

### Claim 1

A metal oxide thin-film transistor, comprising:
a substrate;
a source electrode, a barrier layer and a drain electrode which are sequentially formed on the substrate; and
a semiconductor active layer formed on side surfaces of the source electrode and the drain electrode;
wherein the semiconductor active layer is respectively connected with the source electrode and the drain electrode;
wherein, in a cross-sectional structure of the metal oxide thin-film transistor, each of the source electrode, the barrier layer and the drain electrode is a trapezoidal structure that a length of an upper surface is less than a length of a lower surface; a length of a lower surface of the drain electrode is the same as a length of an upper surface of the barrier layer, a length of a lower surface of the barrier layer is less than a length of an upper surface of the source electrode such that a portion of the source electrode is exposed outside a covering range of the barrier layer; and
wherein the semiconductor active layer is a patterned semiconductor active layer, the patterned semiconductor active layer includes a first patterned semiconductor active layer located at and simultaneously contacted with a left side of the drain electrode and a left side of the source electrode, and a second patterned semiconductor active layer located at and simultaneously contacted with a right side of the drain electrode and a right side of the source electrode.

### Claim 2 (depends on 1)

The metal oxide thin-film transistor according to claim 1, wherein a gate insulation layer is formed on the semiconductor active layer, a patterned gate electrode is formed on the gate insulation layer, the patterned gate electrode is respectively located at left and right sides of the gate insulation layer, the patterned gate electrode located at the left side of the gate insulation layer is also correspondingly disposed above the first patterned semiconductor active layer, the patterned gate electrode located at the right side of the gate insulation layer is also correspondingly disposed above the second patterned semiconductor active layer, and the patterned gate electrode located at the left side and the patterned gate electrode located at the right side are connected with each other.