# US 10,483,402 B2 · Semiconductor device

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 10,483,402 B2
- Document ID: US10483402B2
- Status: Granted
- Kind: B2
- Application number: 15/474,082
- Filed: 2017-03-30
- Published: 2017-09-28
- Granted: 2019-11-19
- Earliest claimed: 2012-01-18
- Assignees: Semiconductor Energy Laboratory Co., Ltd.
- Applicants: Semiconductor Energy Laboratory Co., Ltd.
- Inventors: Shunpei Yamazaki; Daisuke Matsubayashi; Yutaka Okazaki
- Web page: https://patentgrep.com/patent/US10483402B2

## CPC

- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 30/6706: {for preventing leakage current (TFTs characterised by the properties of the source or drain H10D30/6713)}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 30/62: Fin field-effect transistors [FinFET]
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

The semiconductor device includes a transistor including an oxide semiconductor film having a channel formation region, a gate insulating film, and a gate electrode layer. In the transistor, the channel length is small (5 nm or more and less than 60 nm, preferably 10 nm or more and 40 nm or less), and the thickness of the gate insulating film is large (equivalent oxide thickness which is obtained by converting into a thickness of silicon oxide containing nitrogen is 5 nm or more and 50 nm or less, preferably 10 nm or more and 40 nm or less). Alternatively, the channel length is small (5 nm or more and less than 60 nm, preferably 10 nm or more and 40 nm or less), and the resistivity of the source region and the drain region is 1.9×10−5 Ω·m or more and 4.8×10−3 Ω·m or less.

## Claims

### Claim 1

A semiconductor device comprising:
an oxide semiconductor film comprising a channel formation region of a transistor;
a gate insulating film over the oxide semiconductor film;
a gate electrode over the gate insulating film;
an interlayer insulating film over the gate electrode;
a source electrode electrically connected to the oxide semiconductor film through a first opening in the interlayer insulating film; and
a drain electrode electrically connected to the oxide semiconductor film through a second opening in the interlayer insulating film,
wherein, in a cross section in a channel width direction of the transistor, the gate electrode continuously covers a first side surface, a top surface, and a second side surface of the oxide semiconductor film, and
wherein a thickness of the oxide semiconductor film is twice or more a length of the oxide semiconductor film in the channel width direction.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein the source electrode and the drain electrode are on and in contact with the interlayer insulating film.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein the oxide semiconductor film has a stacked-layer structure.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, further comprising an aluminum oxide film between the gate electrode and the interlayer insulating film,
wherein the aluminum oxide film continuously covers the first side surface, the top surface, and the second side surface of the oxide semiconductor film with the gate electrode therebetween.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1,
wherein the oxide semiconductor film comprises indium, gallium, and zinc, and
wherein an indium content in the oxide semiconductor film is higher than a gallium content in the oxide semiconductor film.

### Claim 6

A semiconductor device comprising:
an oxide semiconductor film comprising a first region, a second region, and a channel formation region of a transistor between the first region and the second region;
a gate insulating film over the oxide semiconductor film;
a gate electrode over the gate insulating film;
an interlayer insulating film over the gate electrode;
a source electrode electrically connected to the first region through a first opening in the interlayer insulating film; and
a drain electrode electrically connected to the second region through a second opening in the interlayer insulating film,
wherein, in a cross section in a channel width direction of the transistor, the gate electrode continuously covers a first side surface, a top surface, and a second side surface of the oxide semiconductor film, and
wherein a thickness of the oxide semiconductor film is twice or more a length of the oxide semiconductor film in the channel width direction.

### Claim 7 (depends on 6)

The semiconductor device according to claim 6, wherein a resistivity of the first region and a resistivity of the second region are each greater than or equal to 1.9×10−5 Ω·m and less than or equal to 4.8×10−3 Ω·m.

### Claim 8 (depends on 6)

The semiconductor device according to claim 6, wherein the source electrode and the drain electrode are on and in contact with the interlayer insulating film.

### Claim 9 (depends on 6)

The semiconductor device according to claim 6, wherein the oxide semiconductor film has a stacked-layer structure.

### Claim 10 (depends on 6)

The semiconductor device according to claim 6, further comprising an aluminum oxide film between the gate electrode and the interlayer insulating film,
wherein the aluminum oxide film continuously covers the first side surface, the top surface, and the second side surface of the oxide semiconductor film with the gate electrode therebetween.

### Claim 11 (depends on 6)

The semiconductor device according to claim 6,
wherein the oxide semiconductor film comprises indium, gallium, and zinc, and
wherein an indium content in the oxide semiconductor film is higher than a gallium content in the oxide semiconductor film.

### Claim 12

A semiconductor device comprising:
an oxide semiconductor film comprising a channel formation region of a transistor;
a gate insulating film over the oxide semiconductor film;
a gate electrode over the gate insulating film;
an interlayer insulating film over the gate electrode;
a source electrode electrically connected to the oxide semiconductor film through a first opening in the interlayer insulating film; and
a drain electrode electrically connected to the oxide semiconductor film through a second opening in the interlayer insulating film,
wherein, in a cross section in a channel width direction of the transistor, the gate electrode continuously covers a first side surface, a top surface, and a second side surface of the oxide semiconductor film,
wherein a thickness of the oxide semiconductor film is twice or more a length of the oxide semiconductor film in the channel width direction,
wherein a channel length of the transistor is greater than or equal to 5 nm and less than 60 nm, and
wherein an equivalent oxide thickness which is obtained by converting into a thickness of silicon oxide containing nitrogen of the gate insulating film is greater than or equal to 5 nm and less than or equal to 50 nm.

### Claim 13 (depends on 12)

The semiconductor device according to claim 12, wherein the source electrode and the drain electrode are on and in contact with the interlayer insulating film.

### Claim 14 (depends on 12)

The semiconductor device according to claim 12, wherein the oxide semiconductor film has a stacked-layer structure.

### Claim 15 (depends on 12)

The semiconductor device according to claim 12, further comprising an aluminum oxide film between the gate electrode and the interlayer insulating film,
wherein the aluminum oxide film continuously covers the first side surface, the top surface, and the second side surface of the oxide semiconductor film with the gate electrode therebetween.

### Claim 16 (depends on 12)

The semiconductor device according to claim 12,
wherein the oxide semiconductor film comprises indium, gallium, and zinc, and
wherein an indium content in the oxide semiconductor film is higher than a gallium content in the oxide semiconductor film.