# US 10,483,400 B2 · Thin film transistor with carbon nanotubes > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,483,400 B2 - Document ID: US10483400B2 - Status: Granted - Kind: B2 - Application number: 15/978,264 - Filed: 2018-05-14 - Published: 2018-11-22 - Granted: 2019-11-19 - Earliest claimed: 2017-05-17 - Assignees: Tsinghua University; Hon Hai Precision Industry Co., Ltd. - Applicants: Tsinghua University; Hon Hai Precision Industry Co., Ltd. - Inventors: Jiang-Tao Wang; Peng Liu; Kai-Li Jiang; Shou-Shan Fan - Web page: https://patentgrep.com/patent/US10483400B2 ## CPC - H10D 30/67: Thin-film transistors [TFT] {(Stacked nanowire, nanosheet or nanoribbon FETs H10D30/501)} - H10D 30/6729: {characterised by the electrodes} - H10D 30/6739: {Conductor-insulator-semiconductor electrodes} - H10K 10/466: {Lateral bottom-gate IGFETs comprising only a single gate} - H10K 85/221: {Carbon nanotubes} - B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic - B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites - B82Y 40/00: Manufacture or treatment of nanostructures - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES - B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES ## Abstract A thin film transistor including: an insulating substrate; a gate electrode, located on the insulating substrate; a gate insulating layer, located on the gate electrode; a carbon nanotube structure, located on the gate insulating layer; wherein the carbon nanotube structure includes at least one carbon nanotube, the carbon nanotube includes two metallic carbon nanotube segments and one semiconducting carbon nanotube segment between the two metallic carbon nanotube segments, one of the metallic carbon nanotube segments is used as a source electrode, the other one of the metallic carbon nanotube segments is used as a drain electrode, the semiconducting carbon nanotube segment is used as a channel. ## Claims ### Claim 1 A thin film transistor comprising: an insulating substrate; a gate electrode, the gate electrode located on the insulating substrate; a gate insulating layer, the gate insulating layer located on the gate electrode; a carbon nanotube structure, the carbon nanotube structure located on the gate insulating layer; wherein the carbon nanotube structure comprises a plurality of carbon nanotubes, each carbon nanotube of the plurality of carbon nanotubes consists of a first metallic carbon nanotube segment, a second metallic carbon nanotube segment and a semiconducting carbon nanotube segment between the first metallic carbon nanotube segment and the second metallic carbon nanotube segment, the first metallic carbon nanotube segment, the second metallic carbon nanotube segment and the semiconducting carbon nanotube segment are connected and form an integrated structure, the first metallic carbon nanotube segment is used as a source electrode, the second metallic carbon nanotube segment is used as a drain electrode, the semiconducting carbon nanotube segment is used as a channel. ### Claim 2 (depends on 1) The thin film transistor as claimed in claim 1, further comprises a first metal electrode and a second metal electrode, the first metal electrode is located on the first metallic carbon nanotube segment, the second metal electrode is located on the second metallic carbon nanotube segment, the first metal electrode is used as a source electrode lead, the second metal electrode is used as a drain electrode lead. ### Claim 3 (depends on 1) The thin film transistor as claimed in claim 1, wherein the plurality of carbon nanotubes are combined with each other by Van der Waals force and extend along a same direction. ### Claim 4 (depends on 1) The thin film transistor as claimed in claim 1, wherein the first metallic carbon nanotube segment and the second metallic carbon nanotube segment and the semiconducting carbon nanotube segment in each carbon nanotube are connected by a Schottky barrier. ### Claim 5 (depends on 1) The thin film transistor as claimed in claim 1, wherein the carbon nanotube is a single-walled carbon nanotube, and a diameter of the single-walled carbon nanotube is less than 2 nanometers. ### Claim 6 (depends on 5) The thin film transistor as claimed in claim 5, wherein the diameter of the single-walled carbon nanotube is in a range of 1.2 nanometers to 1.5 nanometers. ### Claim 7 A thin film transistor comprising: an insulating substrate; a carbon nanotube structure, the carbon nanotube structure located on the insulating substrate; an insulating layer, the insulating layer located on the carbon nanotube structure; a gate electrode, the gate electrode located on the insulating layer and insulated from the carbon nanotube structure; wherein the carbon nanotube structure comprises a plurality of carbon nanotubes, each carbon nanotube of the plurality of carbon nanotubes consists of a first metallic carbon nanotube segment, a second metallic carbon nanotube segment and a semiconducting carbon nanotube segment between the first metallic carbon nanotube segment and the second metallic carbon nanotube segment, the first metallic carbon nanotube segment, the second metallic carbon nanotube segment and the semiconducting carbon nanotube segment are connected and form an integrated structure, the first metallic carbon nanotube segment is used as a source electrode, the second metallic carbon nanotube segment is used as a drain electrode, the semiconducting carbon nanotube segment is used as a channel. ### Claim 8 (depends on 7) The thin film transistor as claimed in claim 7, further comprises a first metal electrode and a second metal electrode, the first metal electrode is located on the first metallic carbon nanotube segment, the second metal electrode is located on the second metallic carbon nanotube segment, the first metal electrode is used as a source electrode lead, the second metal electrode is used as a drain electrode lead. ### Claim 9 (depends on 7) The thin film transistor as claimed in claim 7, wherein the plurality of carbon nanotubes are combined with each other by Van der Waals force and extend along a same direction. ### Claim 10 (depends on 7) The thin film transistor as claimed in claim 7, wherein the carbon nanotube is a single-walled carbon nanotube, the diameter of the single-walled carbon nanotube is less than 2 nanometers. ### Claim 11 (depends on 10) The thin film transistor as claimed in claim 10, wherein the diameter of the single-walled carbon nanotube is in a range of 1.2 nanometers to 1.5 nanometers. ### Claim 12 A thin film transistor comprising: a carbon nanotube structure, the carbon nanotube structure comprises a carbon nanotube, the carbon nanotube comprises a first metallic carbon nanotube segment, a second metallic carbon nanotube segment and one semiconducting carbon nanotube segment between the first metallic carbon nanotube segment and the second metallic carbon nanotube segment, the first metallic carbon nanotube segment, the second metallic carbon nanotube segment and the semiconducting carbon nanotube segment are connected and form an integrated structure, the first metallic carbon nanotube segment is used as a source electrode, the second metallic carbon nanotube segment is used as a drain electrode, the semiconducting carbon nanotube segment is used as a channel, the carbon nanotube structure comprises a plurality of carbon nanotubes, the plurality of carbon nanotubes are combined with each other by Van der Waals force and extend along a same direction, the first metallic carbon nanotube segment and the second metallic carbon nanotube segment have a same length in the plurality of carbon nanotubes, and the semiconducting carbon nanotube segments have a same length in the plurality of carbon nanotubes. ### Claim 13 (depends on 12) The thin film transistor as claimed in claim 12, further comprises a first metal electrode and a second electrode, the first metal electrode is located on the first metallic carbon nanotube segment, the second metal electrode is located on the second metallic carbon nanotube segment, the first metal electrode is used as a source electrode, the second metal electrode is used as a drain electrode. ### Claim 14 (depends on 12) The thin film transistor as claimed in claim 12, wherein the carbon nanotube is a single-walled carbon nanotube, a diameter of the single-walled carbon nanotube is less than 2 nanometers. ### Claim 15 (depends on 12) The thin film transistor as claimed in claim 12, wherein a diameter of the single-walled carbon nanotube is in a range of 1.2 nanometers to 1.5 nanometers. ### Claim 16 (depends on 1) The thin film transistor as claimed in claim 1, wherein the semiconducting carbon nanotube segment is grown from the first metallic carbon nanotube segment, and the second metallic carbon nanotube segment is grown from the semiconducting carbon nanotube segment by applying an electric field.