# US 10,483,376 B1 · Method for producing a semiconductor device

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- Number: US 10,483,376 B1
- Document ID: US10483376B1
- Status: Granted
- Kind: B1
- Application number: 16/520,892
- Filed: 2019-07-24
- Published: 2019-11-14
- Granted: 2019-11-19
- Earliest claimed: 2015-11-09
- Assignees: Unisantis Electronics Singapore Pte. Ltd.
- Applicants: Unisantis Electronics Singapore Pte. Ltd.
- Inventors: Fujio Masuoka; Hiroki Nakamura; Nozomu Harada
- Web page: https://patentgrep.com/patent/US10483376B1

## CPC

- H10D 30/031: {of thin-film transistors [TFT]}
- H10D 30/025: {of vertical IGFETs (of VDMOS H10D30/0291; of vertical TFTs H10D30/0318)}
- H10D 30/63: Vertical IGFETs (H10D30/66 {, H10D30/6728, H10D30/689, H10D30/693} take precedence)
- H10D 30/6728: {Vertical TFTs}
- H10D 30/6735: {having gates fully surrounding the channels, e.g. gate-all-around}
- H10D 30/6757: {characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715)}
- H10D 64/01304: {characterised by the conductor}
- H10D 84/016: {the components including vertical IGFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10P 14/27: {using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials}
- H10P 50/264: {by chemical means}
- H10P 50/71: {using masks for conductive or resistive materials}
- H10D 62/122: {oriented at angles to substrates, e.g. perpendicular to substrates}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method for producing a semiconductor device includes depositing a first insulating film and a second insulating film on a planar semiconductor layer formed on a substrate; forming a first hole for forming a gate electrode in the second insulating film; filling the first hole with a first metal to form the gate electrode; forming a side wall formed of a third insulating film on an upper surface of the gate electrode and a side surface of the first hole; performing etching through, as a mask, the side wall formed of the third insulating film, to form a second hole in the gate electrode and the first insulating film; forming a gate insulating film on a side surface of the second hole; and epitaxially growing a semiconductor layer, within the second hole, on the planar semiconductor layer to form a first pillar-shaped semiconductor layer.

## Claims

### Claim 1

A method for producing a semiconductor device, the method comprising:
depositing a first insulating film and a second insulating film on a planar semiconductor layer formed on a substrate;
forming a first hole for forming a gate electrode in the second insulating film;
filling the first hole with a first metal to form the gate electrode;
forming a side wall formed of a third insulating film on an upper surface of the gate electrode and a side surface of the first hole;
performing etching through, as a mask, the side wall formed of the third insulating film, to form a second hole in the gate electrode and the first insulating film;
forming a gate insulating film on a side surface of the second hole; and
epitaxially growing a semiconductor layer, within the second hole, on the planar semiconductor layer to form a first pillar-shaped semiconductor layer.