# US 10,483,370 B2 · Semiconductor structure with unleveled gate structure > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,483,370 B2 - Document ID: US10483370B2 - Status: Granted - Kind: B2 - Application number: 15/807,860 - Filed: 2017-11-09 - Published: 2018-03-08 - Granted: 2019-11-19 - Earliest claimed: 2015-05-15 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Co., Ltd. - Inventors: Chai-Wei Chang; Che-Cheng Chang; Po-Chi Wu; Yi-Cheng Chao - Web page: https://patentgrep.com/patent/US10483370B2 ## CPC - H10D 64/017: {using dummy gates in processes wherein at least parts of the final gates are self-aligned to the dummy gates, i.e. replacement gate processes} - H10D 30/024: {of fin field-effect transistors [FinFET]} - H10D 30/62: Fin field-effect transistors [FinFET] - H10D 64/021: {using multiple gate spacer layers, e.g. bilayered sidewall spacers} - H10D 64/512: {Disposition of the gate electrodes, e.g. buried gates} - H10P 50/692: {characterised by their composition, e.g. multilayer masks or materials} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract Semiconductor structures are provided. The semiconductor structure includes a fin structure formed over a substrate and a gate structure formed across the fin structure. In addition, the gate structure includes a gate dielectric layer formed over the substrate and a work function metal layer formed over a portion of the gate dielectric layer. The gate structure further includes a gate electrode layer formed over a portion of the work function metal layer. In addition, a top surface of the gate electrode layer is located at a position that is higher than that of a top surface of the gate dielectric layer, and the top surface of the gate dielectric layer is located at a position that is higher than that of a top surface of the work function layer. ## Claims ### Claim 1 A semiconductor structure, comprising: a fin structure formed over a substrate; a gate structure formed across the fin structure, wherein the gate structure comprises: a gate dielectric layer formed over the substrate; a work function metal layer formed over a portion of the gate dielectric layer; and a gate electrode layer formed over a portion of the work function metal layer, wherein a top surface of the gate electrode layer is located at a position that is higher than that of a top surface of the gate dielectric layer, and the top surface of the gate dielectric layer is located at a position that is higher than that of a top surface of the work function layer; a spacer formed on a sidewall of the gate structure; and a dielectric material formed over the top surface of the gate electrode layer and in direct contact with the top surface of the gate electrode layer, wherein a topmost surface of the spacer is higher than a topmost surface of the gate electrode layer, and a bottommost of the dielectric material is lower than a topmost surface of the gate dielectric layer. ### Claim 2 (depends on 1) The semiconductor structure as claimed in claim 1, wherein a distance between the top surface of the gate electrode layer and the top surface of the work function metal layer is in a range from 0.1 nm to 10 nm. ### Claim 3 (depends on 1) The semiconductor structure as claimed in claim 1, wherein a distance between the top surface of the work function metal layer and the top surface of the gate dielectric layer is in a range from 0.1 nm to 5 nm. ### Claim 4 (depends on 1) The semiconductor structure as claimed in claim 1, wherein two sidewalls of an upper portion of the gate electrode layer are in direct contact with the dielectric material. ### Claim 5 (depends on 1) The semiconductor structure as claimed in claim 1, wherein a distance between a top surface of the dielectric material and the top surface of the gate electrode layer is in a range from 0.1 nm to 50 nm. ### Claim 6 (depends on 1) The semiconductor structure as claimed in claim 1, wherein the dielectric material extends on the top surface of the gate dielectric layer, and a distance between a top surface of the dielectric material and the top surface of the gate dielectric layer is in a range from 5 nm to 50 nm. ### Claim 7 (depends on 1) The semiconductor structure as claimed in claim 1, wherein the dielectric material is silicon nitride. ### Claim 8 A semiconductor structure, comprising: a fin structure formed over a substrate; a gate structure formed across the fin structure, wherein the gate structure comprises: a gate dielectric layer formed over the substrate; a work function metal layer formed over the gate dielectric layer; and a gate electrode layer formed over the work function metal layer; a spacer formed over a sidewall of the gate structure; and a hard mask structure formed over the gate structure, wherein the hard mask structure comprises a first portion formed directly above the work function metal layer, a second portion formed directly above the gate dielectric layer, and a third portion formed directly above the gate electrode layer, a distance between a top surface of the first portion of the hard mask structure and a top surface of the work function metal layer is greater than a distance between a top surface of the second portion of the hard mask structure and a top surface of the gate dielectric layer, and the distance between the top surface of the second portion of the hard mask structure and the top surface of the gate dielectric layer is greater than a distance between a top surface of the third portion of the hard mask structure and a top surface of the gate electrode layer, and the hard mask structure is made of a dielectric material, wherein each of the first portion, the second portion, and the third portion extends from a bottom surface to a too surface of the hard mask structure, wherein a topmost surface of the hard mask structure is flush with a topmost surface of the spacer. ### Claim 9 (depends on 8) The semiconductor structure as claimed in claim 8, wherein the first portion of the hard mask structure is thicker than the second portion of the hard mask structure, and the second portion of the hard mask structure is thicker than the third portion of the hard mask structure. ### Claim 10 (depends on 8) The semiconductor structure as claimed in claim 8, wherein the first portion of the hard mask structure has a first thickness and the third portion of the hard mask structure has a third thickness, and a difference between the first thickness and the third thickness is in a range from 0.1 nm to 10 nm. ### Claim 11 (depends on 8) The semiconductor structure as claimed in claim 8, wherein the second portion of the hard mask structure has a second thickness and the third portion of the hard mask structure has a third thickness, and a difference between the second thickness and the third thickness is in a range from 0.1 nm to 10 nm. ### Claim 12 (depends on 8) The semiconductor structure as claimed in claim 8, wherein the thickness of the work function metal layer is greater than the thickness of the gate dielectric layer. ### Claim 13 (depends on 8) The semiconductor structure as claimed in claim 8, wherein the first portion of the hard mask structure is in direct contact with a top portion of the work function metal layer, the second portion of the hard mask structure is in direct contact with a top surface of the gate dielectric layer, and the third portion of the hard mask structure is in direct contact with the gate electrode layer. ### Claim 14 (depends on 8) The semiconductor structure as claimed in claim 8, wherein the bottom surface of the hard mask structure is not flat. ### Claim 15 A semiconductor structure, comprising: a fin structure formed over a substrate; a gate structure formed across the fin structure, wherein the gate structure comprises: a gate dielectric layer formed over the substrate; a first work function metal layer formed over the gate dielectric layer; and a gate electrode layer formed over the first work function metal layer; a spacer formed on a sidewall of the gate dielectric layer; and a dielectric structure having a first portion, a second portion, and a third portion formed over the gate structure, wherein the first portion is located between the second portion and the third portion, and the second portion is in direct contact with the spacer, and a bottom surface of the first portion is lower than a bottom surface of the second portion and the bottom surface of the second portion is lower than a bottom surface of the third portion, and the first portion, the second portion, and the third portion of the dielectric structure are made of a same material, wherein each of the first portion, the second portion, and the third portion extends from a bottom surface to a too surface of the hard mask structure, wherein a topmost surface of the spacer is higher than the bottom surface of the second portion and the bottom surface of the third portion. ### Claim 16 (depends on 15) The semiconductor structure as claimed in claim 15, wherein thicknesses of the first portion, the second portion, and the third portion of the dielectric structure are different. ### Claim 17 (depends on 15) The semiconductor structure as claimed in claim 15, wherein the bottom surface of the second portion is lower than the bottom surface of the third portion. ### Claim 18 (depends on 15) The semiconductor structure as claimed in claim 15, further comprising: a second work function metal layer formed between the first work function metal layer and the gate electrode layer, wherein a top surface of the second work function metal layer is lower than a top surface of the gate dielectric layer and a top surface of the gate electrode layer. ### Claim 19 (depends on 15) The semiconductor structure as claimed in claim 15, wherein the bottom surface of the first portion of the dielectric structure is in direct contact with the first work function metal layer, and the bottom surface of the second portion of the dielectric structure is in direct contact with the gate dielectric layer. ### Claim 20 (depends on 19) The semiconductor structure as claimed in claim 19, wherein the bottom surface of the third portion of the dielectric structure is in direct contact with the gate electrode layer.