# US 10,483,366 B2 · Semiconductor device

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- Number: US 10,483,366 B2
- Document ID: US10483366B2
- Status: Granted
- Kind: B2
- Application number: 15/680,724
- Filed: 2017-08-18
- Published: 2017-11-30
- Granted: 2019-11-19
- Earliest claimed: 2014-07-14
- Assignees: Unisantis Electronics Singapore Pte. Ltd.
- Applicants: Unisantis Electronics Singapore Pte. Ltd.
- Inventors: Fujio Masuoka; Hiroki Nakamura
- Web page: https://patentgrep.com/patent/US10483366B2

## CPC

- H10D 30/6735: {having gates fully surrounding the channels, e.g. gate-all-around}
- H10D 30/025: {of vertical IGFETs (of VDMOS H10D30/0291; of vertical TFTs H10D30/0318)}
- H10D 30/63: Vertical IGFETs (H10D30/66 {, H10D30/6728, H10D30/689, H10D30/693} take precedence)
- H10D 64/035: {comprising conductor-insulator-conductor-insulator-semiconductor structures}
- H10D 84/0195: {the components including vertical IGFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10D 84/85: Complementary IGFETs, e.g. CMOS
- H10D 88/00: Three-dimensional [3D] integrated devices
- H10D 88/01: {Manufacture or treatment}
- H10W 10/011: {of isolation regions comprising dielectric materials}
- H10W 10/10: Isolation regions comprising dielectric materials
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A semiconductor device includes a third first-conductivity-type semiconductor layer on a semiconductor substrate, and a first pillar-shaped semiconductor layer on the semiconductor substrate. The first pillar-shaped semiconductor layer including a first first-conductivity-type semiconductor layer, a first body region, a second first-conductivity-type semiconductor layer, a first second-conductivity-type semiconductor layer, a second body region, a second second-conductivity-type semiconductor layer, and a third second-conductivity-type semiconductor layer. A first gate insulating film is around the first body region, and a first gate is around the first gate insulating film. A second gate insulating film is around the second body region and a second gate is around the second gate insulating film. An output terminal is connected to the second first-conductivity-type semiconductor layer and the first second-conductivity-type semiconductor layer, and a first contact connects the first gate and the second gate.

## Claims

### Claim 1

A semiconductor device comprising:
a third first-conductivity-type semiconductor layer on a semiconductor substrate;
a first pillar-shaped semiconductor structure vertically extending from a surface of the semiconductor substrate, the first pillar-shaped semiconductor structure including, in sequence,
a first first-conductivity-type semiconductor layer,
a first body region,
a second first-conductivity-type semiconductor layer,
a first second-conductivity-type semiconductor layer;
a second body region,
a second second-conductivity-type semiconductor layer, and
a third second-conductivity-type semiconductor layer,
each layer and region vertically aligned within the first pillar-shaped semiconductor structure;
the semiconductor device further comprising:
a first gate insulating film around the first body region;
a first metal gate around the first gate insulating film;
a second gate insulating film around the second body region;
a second metal gate around the second gate insulating film;
an output terminal connected to the second first-conductivity-type semiconductor layer and the first second-conductivity-type semiconductor layer; and
a first contact connecting the first metal gate and the second metal gate;
a first insulating film surrounding the first first-conductivity-type semiconductor layer and a second insulating film surrounding the second first-conductivity-type semiconductor layer;
a third insulating film surrounding the first second-conductivity-type semiconductor layer and a fourth insulating film surrounding the second second-conductivity-type semiconductor layer;
wherein the first insulating film and the second insulating film contain a same impurity as the first and second first-conductivity-type semiconductor layers, respectively; and
wherein the third insulating film and the fourth insulating film contain a same impurity as the first and second second-conductivity-type semiconductor layers, respectively.