# US 10,483,357 B2 · Semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,483,357 B2 - Document ID: US10483357B2 - Status: Granted - Kind: B2 - Application number: 16/136,285 - Filed: 2018-09-20 - Published: 2019-05-09 - Granted: 2019-11-19 - Earliest claimed: 2017-11-06 - Assignees: Fuji Electric Co., Ltd. - Applicants: Fuji Electric Co.,Ltd. - Inventors: Mutsumi Kitamura; Tohru Shirakawa - Web page: https://patentgrep.com/patent/US10483357B2 ## CPC - H10D 64/112: {comprising multiple field plate segments} - H10D 8/00: Diodes (variable-capacitance diodes H10D1/64; gated diodes H10D12/00) - H10D 8/422: {PN diodes having the PN junctions in mesas} - H10D 12/481: {having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs} - H10D 62/126: {Top-view geometrical layouts of the regions or the junctions} - H10D 62/127: {of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs} - H10D 62/135: {Non-interconnected multi-emitter structures} - H10D 62/142: {Anode regions of thyristors or collector regions of gated bipolar-mode devices} - H10D 64/117: {Recessed field plates, e.g. trench field plates or buried field plates} - H10D 64/513: {within recesses in the substrate, e.g. trench gates, groove gates or buried gates} - H10D 64/519: {characterised by their top-view geometrical layouts} - H10D 84/617: {Combinations of vertical BJTs and only diodes} - H10D 84/811: {Combinations of field-effect devices and one or more diodes, capacitors or resistors} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A semiconductor device including: a semiconductor substrate having a drift region of the first conductivity type; a cathode region formed on the lower surface of the semiconductor substrate; a diode portion having the cathode region formed on the lower surface of the semiconductor substrate; the first dummy trench portion provided from the upper surface of the semiconductor substrate to the drift region, including one part provided inside the diode portion and the other part provided outside the diode portion, and provided extending in series from inside the diode portion to outside the diode portion in a predetermined extending direction on the upper surface of the semiconductor substrate; and the first lead-out portion that is provided on the upper surface of the semiconductor substrate, and electrically connected to the first dummy trench portion outside the diode portion is provided. ## Claims ### Claim 1 A semiconductor device comprising: a semiconductor substrate having a drift region of a first conductivity type; a cathode region formed on a lower surface of the semiconductor substrate; a diode portion having the cathode region formed on the lower surface of the semiconductor substrate; a first dummy trench portion provided from an upper surface of the semiconductor substrate to the drift region, including one part provided inside the diode portion and the other part provided outside the diode portion, and provided extending in series from inside the diode portion to outside the diode portion in a predetermined extending direction on the upper surface of the semiconductor substrate; and a first lead-out portion provided on the upper surface of the semiconductor substrate, and electrically connected to the first dummy trench portion outside the diode portion. ### Claim 2 (depends on 1) The semiconductor device according to claim 1, further comprising: a transistor portion provided adjacent to the diode portion in the extending direction on the semiconductor substrate when the semiconductor substrate is seen from above, wherein the transistor portion has the first dummy trench portion, and the first dummy trench portion is arrayed in an array direction orthogonal to the extending direction at a predetermined trench pitch in the diode portion and the transistor portion when the semiconductor substrate is seen from above. ### Claim 3 (depends on 2) The semiconductor device according to claim 2, further comprising: a second lead-out portion provided on the upper surface of the semiconductor substrate, wherein the transistor portion further have a second dummy trench portion extending in the extending direction and inwardly provided from the upper surface of the semiconductor substrate, the second dummy trench portion is electrically connected to the second lead-out portion, and the first lead-out portion and the second lead-out portion are arrayed in the array direction. ### Claim 4 (depends on 2) The semiconductor device according to claim 2, wherein the transistor portion further have a gate trench portion extending in the extending direction and inwardly provided from the upper surface of the semiconductor substrate, and the gate trench portion is arrayed in the array direction at a trench pitch different from the predetermined trench pitch. ### Claim 5 (depends on 4) The semiconductor device according to claim 4, wherein a distance in the extending direction between an end of the gate trench portion on the diode portion side and an end of the first dummy trench portion in the diode portion is no greater than twice a trench pitch in the array direction between the gate trench portion in the transistor portion and the first dummy trench portion adjacent to the gate trench portion, when the semiconductor substrate is seen from above. ### Claim 6 (depends on 4) The semiconductor device according to claim 4, wherein the transistor portion has a plurality of emitter regions being in direct contact with the gate trench portion and arrayed in the extending direction on the upper surface of the semiconductor substrate, and a distance in the extending direction between an end of the gate trench portion on the diode portion side and the emitter region provided on a side closest to the diode portion in the transistor portion is smaller than a distance in the extending direction between an end opposite to the end on the diode portion side of the gate trench portion and the emitter region provided farthest from the diode portion in the extending direction, when the semiconductor substrate is seen from above. ### Claim 7 (depends on 4) The semiconductor device according to claim 4, wherein the transistor portion has a collector region on the lower surface of the semiconductor substrate, and a boundary between the cathode region and the collector region is positioned on a side closer to the transistor portion relative to a midpoint in the extending direction between an end of the gate trench portion on the diode portion side and an end of the first dummy trench portion in the diode portion, when the semiconductor substrate is seen from above. ### Claim 8 (depends on 4) The semiconductor device according to claim 4, wherein the transistor portion has a collector region on the lower surface of the semiconductor substrate, and a boundary between the cathode region and the collector region is positioned on a side closer to the diode portion relative to a midpoint in the extending direction between an end of the gate trench portion on the diode portion side and an end of the first dummy trench portion in the diode portion, when the semiconductor substrate is seen from above. ### Claim 9 (depends on 2) The semiconductor device according to claim 2, further comprising: a plurality of first dummy trench portions, each of which is the first dummy trench portion, wherein a trench pitch between the first dummy trench portions adjacent to each other in the array direction is smaller than half the predetermined trench pitch in the diode portion. ### Claim 10 (depends on 2) The semiconductor device according to claim 2, wherein a trench pitch between the first dummy trench portions adjacent to each other in the array direction is larger than half the predetermined trench pitch in the diode portion. ### Claim 11 (depends on 1) The semiconductor device according to claim 1, wherein the first dummy trench portion has a U shape in the diode portion when the semiconductor substrate is seen from above. ### Claim 12 (depends on 11) The semiconductor device according to claim 11, wherein the first dummy trench portion has a unicursal shape in the diode portion when the semiconductor substrate is seen from above.