# US 10,483,350 B2 · Semiconductor device

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 10,483,350 B2
- Document ID: US10483350B2
- Status: Granted
- Kind: B2
- Application number: 15/754,784
- Filed: 2016-08-23
- Published: 2018-09-13
- Granted: 2019-11-19
- Earliest claimed: 2015-08-26
- Assignees: Hosei University; Sciocs Company Limited; Sumitomo Chemical Company, Limited
- Applicants: Hosei University; Sciocs Company Limited; Sumitomo Chemical Company, Limited
- Inventors: Tohru Nakamura; Tomoyoshi Mishima; Hiroshi Ohta; Yasuhiro Yamamoto; Fumimasa Horikiri
- Web page: https://patentgrep.com/patent/US10483350B2

## CPC

- H10D 62/104: {having particular shapes of the bodies at or near reverse-biased junctions, e.g. having bevels or moats}
- H10D 8/043: {of planar diodes}
- H10D 8/045: {of PN junction diodes}
- H10D 8/422: {PN diodes having the PN junctions in mesas}
- H10D 64/111: {Field plates}
- H10W 74/137: {the encapsulations being directly on the semiconductor body (H10W74/134 takes precedence)}
- H10W 74/147: {the encapsulations being multilayered}
- H10W 74/40: characterised by their materials
- H10W 74/43: comprising oxides, nitrides or carbides, e.g. ceramics or glasses
- H10D 62/8503: {Nitride Group III-V materials, e.g. AlN or GaN}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

There is provided a semiconductor device, including: a semiconductor member having a mesa structure in which a second semiconductor layer having one of a p-type conductivity type and an n-type conductivity type is laminated on a first semiconductor layer having the other one of the p-type conductivity type and the n-type conductivity type, so that the second semiconductor layer is exposed on an upper surface of the mesa structure, a pn junction interface is exposed on a side surface of the mesa structure, and the first semiconductor layer is exposed on an outside upper surface of the mesa structure; an insulating film disposed on a side surface of the mesa structure and on an outside upper surface of the mesa structure; a first electrode electrically connected to the second semiconductor layer on the upper surface of the mesa structure, and extends on the side surface of the mesa structure and on the outside upper surface of the mesa structure on the insulating film; and a second electrode electrically connected to the first semiconductor layer on a lower surface of the first semiconductor layer, wherein the insulating film is constituted including a first insulating layer and a second insulating layer, the first insulating layer is disposed so as to cover a corner portion where the side surface of the mesa structure and the outside upper surface of the mesa structure are connected to each other, the second insulating layer is disposed so as to cover the pn junction interface exposed on the side surface of the mesa structure, or is disposed to constitute an entire thickness of the insulating film directly under the electrode end of the first electrode so as to cover the area directly under the electrode end, the relative dielectric constant of the second insulating layer is equal to or larger than the relative dielectric constant of the semiconductor member, and the relative dielectric constant of the first insulating layer is smaller than the relative dielectric constant of the second insulating layer.

## Claims

### Claim 1

A semiconductor device, comprising:
a semiconductor member having a mesa structure in which a second semiconductor layer having one of a p-type conductivity type and an n-type conductivity type is laminated on a first semiconductor layer having the other one of the p-type conductivity type and the n-type conductivity type, so that the second semiconductor layer is exposed on an upper surface of the mesa structure, a pn junction interface is exposed on a side surface of the mesa structure, and the first semiconductor layer is exposed on an outside upper surface of the mesa structure;
an insulating film disposed on a side surface of the mesa structure and on an outside upper surface of the mesa structure;
a first electrode electrically connected to the second semiconductor layer on the upper surface of the mesa structure, and extends on the side surface of the mesa structure and on the outside upper surface of the mesa structure on the insulating film; and
a second electrode electrically connected to the first semiconductor layer on a lower surface of the first semiconductor layer,
wherein the insulating film is formed including a first insulating layer and a second insulating layer,
the first insulating layer is disposed so as to cover a corner portion where the side surface of the mesa structure and the outside upper surface of the mesa structure are connected to each other,
the second insulating layer is disposed so as to cover the pn junction interface exposed on the side surface of the mesa structure, or disposed so as to cover an area directly under an electrode end in a state of constituting an entire thickness of the insulating film directly under the electrode end of the first electrode,
a relative dielectric constant of the second insulating layer is equal to or larger than a relative dielectric constant of the semiconductor member, and
the relative dielectric constant of the first insulating layer is smaller than the relative dielectric constant of the second insulating layer, and
wherein the first insulating layer is in direct contact with the corner portion,
the second insulating layer is in direct contact with the pn junction interface, or in direct contact with the semiconductor member at an area directly under the electrode end of the first electrode, and
the second insulating layer is not in contact with the corner portion.

### Claim 2 (depends on 1)

The semiconductor device according to claim 1, wherein the second insulating layer is disposed so as to cover the pn junction interface exposed on a side surface of the mesa structure.

### Claim 3 (depends on 1)

The semiconductor device according to claim 1, wherein the second insulating layer is disposed so as to cover the pn junction interface exposed on the side surface of the mesa structure and cover an area directly under the electrode end in a state of constituting an entire thickness of the insulating film directly under the electrode end of the first electrode.

### Claim 4 (depends on 1)

The semiconductor device according to claim 1, wherein another insulating layer having an intermediate relative dielectric constant of the first insulating layer and the second insulating layer is interposed between the first insulating layer and the second insulating layer, at the laminated portion of the first insulating layer and the second insulating layer.

### Claim 5 (depends on 1)

The semiconductor device according to claim 1, wherein the first insulating layer is disposed so as to cover the corner portion and cover the pn junction interface exposed on the side surface of the mesa structure, and the second insulating layer is disposed so as to cover an area directly under the electrode end in a state of constituting the entire thickness of the insulating film directly under the electrode end of the first electrode.