# US 10,483,325 B2 · Light emitting phototransistor

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- Number: US 10,483,325 B2
- Document ID: US10483325B2
- Status: Granted
- Kind: B2
- Application number: 15/758,928
- Filed: 2016-09-09
- Published: 2019-02-07
- Granted: 2019-11-19
- Earliest claimed: 2015-09-11
- Assignees: University of Florida Research Foundation, Inc.; Nanoholdings, LLC
- Applicants: University Of Florida Research Foundation, Incorporated; Nanoholdings, LLC
- Inventors: Franky So; Do Young Kim; Hyeonggeun Yu; Bhabendra K. Pradhan
- Web page: https://patentgrep.com/patent/US10483325B2

## CPC

- H10K 65/00: Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element and at least one organic radiation-sensitive element, e.g. organic opto-couplers (organic image sensors integrated with organic light-emitting devices H10K39/34; OLED displays integrated with photosensors H10K59/13)
- H10K 30/65: Light-sensitive field-effect devices, e.g. phototransistors
- H10K 30/82: Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
- H10K 71/60: Forming conductive regions or layers, e.g. electrodes
- H10K 85/211: {Fullerenes, e.g. C60}
- Y02E 10/549: Organic PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

A photonic conversion device is provided, comprising a photoactive layer, a dielectric layer, a porous conductor layer, and an electron transport layer in contact with the porous conductor layer. A light emitting device may be in contact with the electron transport layer, forming a conversion device with gain. A method of manufacturing a photonic conversion device may also be provided, comprising forming a photoactive layer, forming a dielectric layer over the photoactive layer, and depositing a conductor layer in contact with the dielectric layer, wherein one or more regions of the dielectric layer are masked during deposition such that the conductor layer includes a plurality of pores that extend through the conductor layer.

## Claims

### Claim 1

A photonic conversion device, comprising:
a photoactive layer;
a porous conductor layer;
a dielectric layer between the photoactive layer and the porous conductor layer;
an electron transport layer in contact with the porous conductor layer; and
a light emitting device in contact with the electron transport layer.

### Claim 2 (depends on 1)

The photonic conversion device of claim 1, further comprising a first electrode in contact with the light emitting device and a second electrode in contact with the photoactive layer, wherein the first electrode and second electrode are each electrically connected to the porous conductor layer through a respective bias voltage source.

### Claim 3 (depends on 1)

The photonic conversion device of claim 1, wherein the porous conductor layer is transparent.

### Claim 4 (depends on 1)

The photonic conversion device of claim 1, wherein the porous conductor layer includes a plurality of holes extending through the porous conductor layer.

### Claim 5 (depends on 4)

The photonic conversion device of claim 4, wherein the transparent conductor is indium tin oxide (ITO).

### Claim 6 (depends on 4)

The photonic conversion device of claim 4, wherein the plurality of holes each have a diameter between 0.1 μm and 10 μm.

### Claim 7 (depends on 1)

The photonic conversion device of claim 1, wherein the electron transport layer comprises fullerene.

### Claim 8 (depends on 1)

The photonic conversion device of claim 1, wherein infrared photons incident on the photoactive layer cause emission of visible light photons from the light emitting device.

### Claim 9 (depends on 1)

The photonic conversion device of claim 1, wherein the light emitting device is an organic light emitting device (OLED).

### Claim 10 (depends on 1)

The photonic conversion device of claim 1, wherein the photoactive layer comprises one or more of: lead sulfide, silver sulfide and silver selenide.

### Claim 11 (depends on 1)

The photonic conversion device of claim 1, wherein the photoactive layer comprises nanocrystals.

### Claim 12 (depends on 1)

The photonic conversion device of claim 1, wherein the dielectric layer comprises a high-κ dielectric.

### Claim 13 (depends on 12)

The photonic conversion device of claim 12, wherein the dielectric layer comprises hafnium oxide.

### Claim 14 (depends on 1)

The photonic conversion device of claim 1, wherein a work function of the electron transport layer is higher than a work function of the porous conductor layer.

### Claim 15 (depends on 1)

The photonic conversion device of claim 1, further comprising a hole blocking layer between the photoactive layer and an electrode, the electrode electrically connected to the porous conductor layer.

### Claim 16 (depends on 15)

The photonic conversion device of claim 15, wherein the hole blocking layer comprises one or more of: titanium dioxide, zinc oxide and zinc sulfide.

### Claim 17 (depends on 15)

The photonic conversion device of claim 15, wherein the hole blocking layer comprises nanocrystals.

### Claim 18

A method of operating a photonic conversion device comprising a photoactive layer, a porous conductor layer, an electron transport layer in contact with the porous conductor layer, and a light emitting device in contact with the electron transport layer, the method comprising:
applying a first bias voltage from the porous conductor layer across the photoactive layer;
applying a second bias voltage from the porous conductor layer across the electron transport layer and the light emitting device, the second bias voltage having a sign opposite to a sign of the first bias voltage,
wherein infrared photons incident on the photoactive layer produce visible photons from the light emitting device with a conversion efficiency exceeding 1000%.

### Claim 19 (depends on 18)

The method of claim 18, wherein the first bias voltage is further applied across a dielectric layer between the photoactive layer and the porous conductor layer.

### Claim 20 (depends on 18)

The method of claim 18, wherein the first bias voltage is applied between a first electrode and the porous conductor layer.

### Claim 21 (depends on 20)

The method of claim 20, wherein the second bias voltage is further applied across a hole blocking layer between the photoactive layer and the first electrode.

### Claim 22 (depends on 18)

The method of claim 18, wherein the second bias voltage is applied between a second electrode and the porous conductor layer, and wherein the visible photons produced from the light emitting device are output from the photonic conversion device via the second electrode.

### Claim 23 (depends on 18)

The method of claim 18, wherein the porous conductor layer is transparent.

### Claim 24 (depends on 18)

The method of claim 18, further comprising directing the infrared photons onto the photonic conversion device.

### Claim 25 (depends on 24)

The method of claim 24, wherein the infrared photons are directed onto a transparent electrode.