# US 10,483,312 B2 · Backside-illuminated complementary metal oxide semiconductor sensor and the manufacturing method thereof

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- Number: US 10,483,312 B2
- Document ID: US10483312B2
- Status: Granted
- Kind: B2
- Application number: 16/003,526
- Filed: 2018-06-08
- Published: 2019-05-09
- Granted: 2019-11-19
- Earliest claimed: 2017-11-07
- Assignees: Huaian Imaging Device Manufacturer Corporation
- Applicants: Huaian Imaging Device Manufacturer Corporation
- Inventors: Yosuke Kitamura; Amane Oishi; Xiaolu Huang
- Web page: https://patentgrep.com/patent/US10483312B2

## CPC

- H10F 39/199: {Back-illuminated image sensors}
- H10F 39/024: {of coatings or optical elements}
- H10F 39/182: {Colour image sensors}
- H10F 39/8067: {Reflectors}
- H10F 39/807: {Pixel isolation structures}
- H10F 39/811: {Interconnections}
- H10F 39/8053: {Colour filters}
- H10F 39/8063: {Microlenses}
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION

## Abstract

A backside-illumination complementary metal oxide semiconductor (CMOS) image sensor, comprises a semiconductor substrate including a first side for receiving incident light and a second side opposite to the first side; and a reflector disposed at the second side of the semiconductor substrate, wherein the reflector is configured to reflect incident light that transmits through the semiconductor substrate back into the semiconductor substrate.

## Claims

### Claim 1

A backside-illumination complementary metal oxide semiconductor (CMOS) image sensor, comprising
a semiconductor substrate including a first side for receiving incident light and a second side opposite to the first side; and
a reflector disposed at the second side of the semiconductor substrate,
wherein the reflector is configured to reflect incident light that transmits through the semiconductor substrate back into the semiconductor substrate, and
wherein the reflector is made of an electrically conductive material and is electrically grounded.

### Claim 2 (depends on 1)

The backside-illumination CMOS image sensor of claim 1, wherein the electrically conductive material is a metal.

### Claim 3 (depends on 2)

The backside-illumination CMOS image sensor of claim 2, wherein the metal includes at least one of Cu, W, Al, Ag and Au.

### Claim 4 (depends on 1)

The backside-illumination CMOS image sensor of claim 1, further comprising
a plurality of wiring layers disposed at the second side of the semiconductor substrate,
wherein the reflector is disposed in one of the wiring layers that is closest to the semiconductor substrate.

### Claim 5 (depends on 1)

The backside-illumination CMOS image sensor of claim 1, further comprising
a red filter disposed at the first side of the semiconductor substrate,
wherein the reflector is configured to only reflect the incident light that transmits through the red filter.

### Claim 6 (depends on 1)

The backside-illumination CMOS image sensor of claim 1, further comprising
a red filter and a green filter both disposed at the first side of the semiconductor substrate,
wherein the reflector is configured to only reflect incident light that transmit through the red filter and the green filter.

### Claim 7

A method of manufacturing a backside-illumination complementary metal oxide semiconductor (CMOS) image sensor, comprising
providing a semiconductor substrate including a first side for receiving incident light and a second side opposite to the first side; and
forming a reflector at the second side of the semiconductor substrate,
wherein the reflector is configured to reflect the incident light that transmits through the semiconductor substrate back into the semiconductor substrate, and
the reflector is formed with an electrically conductive material and is electrically grounded.

### Claim 8 (depends on 7)

The method of claim 7, wherein the electrically conductive material is a metal.

### Claim 9 (depends on 8)

The method of claim 8, wherein the metal includes at least one of Cu, W, Al, Ag and Au.

### Claim 10 (depends on 7)

The method of claim 7, further comprising
forming a plurality of wiring layers on the second side of the semiconductor substrate,
wherein the reflector is formed in one of the wiring layers that is closest to the semiconductor substrate.

### Claim 11 (depends on 10)

The method of claim 10, wherein the reflector and the wiring layer that is closest to the semiconductor substrate are formed simultaneously.

### Claim 12 (depends on 7)

The method of claim 7, further comprising
forming a red filter at the first side of the semiconductor substrate,
wherein the reflector is configured to only reflect the incident light that transmit through the red filter.

### Claim 13 (depends on 7)

The method of claim 7, further comprising
forming a red filter and a green filter at the first side of the semiconductor substrate,
wherein the reflector is configured to only reflect the incident light that transmit through the red filter and the green filter.