# US 10,483,301 B2 · Imaging apparatus and imaging system > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 10,483,301 B2 - Document ID: US10483301B2 - Status: Granted - Kind: B2 - Application number: 15/364,103 - Filed: 2016-11-29 - Published: 2017-06-08 - Granted: 2019-11-19 - Earliest claimed: 2015-12-04 - Assignees: Canon Kabushiki Kaisha - Applicants: Canon Kabushiki Kaisha - Inventors: Hidekazu Takahashi; Kazuaki Tashiro; Tatsuhito Goden - Web page: https://patentgrep.com/patent/US10483301B2 ## CPC - H10F 39/8023: {Disposition of the elements in pixels, e.g. smaller elements in the centre of the imager compared to larger elements at the periphery} - H04N 25/77: Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components - H04N 25/78: Readout circuits for addressed sensors, e.g. output amplifiers or A/D converters - H10F 39/182: {Colour image sensors} - H10F 39/199: {Back-illuminated image sensors} - H10F 39/8053: {Colour filters} - H10F 39/8063: {Microlenses} - H10F 39/811: {Interconnections} - H10F 39/813: {Electronic components shared by multiple pixels, e.g. one amplifier shared by two pixels} - H04N 25/626: Reduction of noise due to residual charges remaining after image readout, e.g. to remove ghost images or afterimages - H04N 25/65: applied to reset noise, e.g. KTC noise related to CMOS structures by techniques other than CDS - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - H04N: PICTORIAL COMMUNICATION, e.g. TELEVISION ## Abstract An imaging apparatus according to the present invention includes a substrate including a plurality of pixel circuits arranged thereon and a semiconductor layer disposed on the substrate. Each of the plurality of pixel circuits includes an amplification transistor configured to output a signal based on charge generated in the semiconductor layer. The charge generated in the semiconductor layer is transferred in a first direction parallel to a surface of the substrate. ## Claims ### Claim 1 An imaging apparatus comprising: a substrate including a plurality of pixel circuits; first, second, third, and fourth electrodes disposed on the substrate; and a semiconductor layer disposed on the substrate and including a first portion and a second portion, wherein the first portion is disposed between the first electrode and the second electrode and is formed vertically above the second electrode and within a boundary of the second electrode, the second portion is disposed between the third electrode and fourth electrode and is formed vertically above the fourth electrode and within a boundary of the fourth electrode, each of the plurality of pixel circuits includes an amplification transistor configured to output a signal based on charge generated in the semiconductor layer, and the charge generated in the semiconductor layer is accumulated in the first portion, and thereafter transferred from the first portion to the second portion in a first direction parallel to a surface of the substrate. ### Claim 2 (depends on 1) The imaging apparatus according to claim 1, further comprising an insulating layer disposed between the first portion and the second electrode in the semiconductor layer. ### Claim 3 (depends on 2) The imaging apparatus according to claim 2, further comprising a charge confining layer disposed between the semiconductor layer and the insulating layer. ### Claim 4 (depends on 3) The imaging apparatus according to claim 3, wherein the charge confining layer extends to a region disposed between the second portion and the fourth electrode in the semiconductor layer. ### Claim 5 (depends on 4) The imaging apparatus according to claim 4, wherein the charge confining layer is disposed in contact with the fourth electrode. ### Claim 6 (depends on 3) The imaging apparatus according to claim 3, wherein a mobility of the charge in the charge confining layer is greater than a mobility of the charge in the semiconductor layer. ### Claim 7 (depends on 6) The imaging apparatus according to claim 6, wherein the mobility of the charge in the charge confining layer is greater than or equal to 1 cm2/Vs. ### Claim 8 (depends on 7) The imaging apparatus according to claim 7, wherein the mobility of the charge in the semiconductor layer is less than 1 cm2/Vs. ### Claim 9 (depends on 8) The imaging apparatus according to claim 8, wherein the charge confining layer includes at least one selected from a group that consists of a graphene sheet, a layer including a quantum dot of HgSe, a layer including a quantum dot of HgTe and a layer including a quantum dot of CdSe. ### Claim 10 (depends on 2) The imaging apparatus according to claim 2, wherein the second portion of the semiconductor layer is disposed in contact with the fourth electrode. ### Claim 11 (depends on 1) The imaging apparatus according to claim 1, wherein the second electrode is electrically connected to the amplification transistor. ### Claim 12 (depends on 1) The imaging apparatus according to claim 1, wherein the fourth electrode is electrically connected to the amplification transistor. ### Claim 13 (depends on 1) The imaging apparatus according to claim 1, wherein the first electrode and the third electrode are separated from each other. ### Claim 14 (depends on 1) The imaging apparatus according to claim 1, wherein the first electrode and the third electrode are formed in a continuous conductive layer. ### Claim 15 (depends on 1) The imaging apparatus according to claim 1, wherein the fourth electrode surrounds the second electrode in a plane parallel to the surface of the substrate. ### Claim 16 (depends on 6) The imaging apparatus according to claim 6, wherein the fourth electrode surrounds the second electrode in a plane which is parallel to the surface of the substrate. ### Claim 17 (depends on 1) The imaging apparatus according to claim 1, wherein the semiconductor layer includes a transfer region disposed between the first portion and the second portion, and wherein a transfer electrode is disposed to control a potential of the transfer region. ### Claim 18 (depends on 17) The imaging apparatus according to claim 17, wherein at least a portion of the second electrode and at least a portion of the transfer electrode are disposed at positions having different distances from the substrate in a second direction vertical to the surface of the substrate. ### Claim 19 (depends on 1) The imaging apparatus according to claim 1, wherein at least a portion of the second electrode and at least a portion of the fourth electrode are disposed at positions having different distances from the substrate in a second direction vertical to the surface of the substrate. ### Claim 20 (depends on 1) An imaging system comprising: the imaging apparatus according to claim 1; and a signal processor which processes a signal output from the imaging apparatus. ### Claim 21 (depends on 1) The imaging apparatus according to claim 1, wherein the charge generated in the semiconductor layer is accumulated in the first portion by transferred in a direction crossing the surface of the substrate, and thereafter is transferred from the first portion to the second portion in the first direction which is different from the direction crossing the surface of the substrate.