Optically restorable semiconductor device, method for fabricating the same, and flash memory device using the same
AssigneeElectronics and Telecommunications Research Institute
InventorsJungWook Lim, Sun Jin Yun, Tae Yoon Kim, Jeho Na, Seong Hyun Lee, Kwang Hoon Jung
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Abstract
Provided is an optically restorable semiconductor device including a gate electrode, a gate insulation film on the gate electrode, a photo-responsive semiconductor film on the gate insulation film, and an interface charge part disposed adjacent to an interface between the photo-responsive semiconductor film and the gate insulation film, wherein the interface charge part includes charge traps, and the interface charge part and the photo-responsive semiconductor film directly contact with each other.
Claims16
An optically restorable semiconductor device comprising:
- a gate electrode;
- a gate insulation film on the gate electrode;
- a photo-responsive semiconductor film on the gate insulation film;
- an interface charge part disposed adjacent to an interface between the photo-responsive semiconductor film and the gate insulation film;
- and
- a plasma treatment area provided on the gate insulation film,
- wherein the interface charge part comprises charge traps,
- wherein the interface charge part and the photo-responsive semiconductor film directly contact each other, and
- wherein the plasma treatment area directly contacts the interface charge layer and comprises deep traps.
A method of fabricating an optically restorable semiconductor device comprising:
- providing a gate electrode;
- forming a gate insulation film on the gate electrode;
- forming a photo-responsive semiconductor film on the gate insulation film;
- and
- forming an interface charge part on an area adjacent to an interface between the gate insulation film and the photo-responsive semiconductor film,
- wherein the interface part comprises charge traps,
- wherein the forming of the interface charge part comprises performing a plasma treatment process or a solution treatment process on a top surface of the gate insulation film,
- wherein the plasma treatment process comprises exposing the top surface of the gate insulation film to a plasma, and
- wherein the solution treatment process comprises exposing the top surface of the gate insulation film to an acid.
A flash memory device comprising:
- a substrate;
- a control gate separated from the substrate in a direction perpendicular to a bottom surface of the substrate;
- a gate insulation film provided between the substrate and the control gate;
- a floating gate interposed between the substrate and the gate insulation film;
- a source electrode and drain electrode respectively disposed on sides of the floating gate;
- and
- a plasma treatment area provided on the gate insulation film,
- wherein the substrate comprises a photo-responsive semiconductor material,
- wherein the floating gate comprises charge traps,
- wherein the substrate and the floating gate directly contact each other,
- wherein a write operation and an erase operation are performed by a trap voltage applied to the control gate and light irradiated on the substrate, and
- wherein the plasma treatment area directly contacts the floating gate and comprises deep traps.
Dependencies are inferred from the claim text.